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http://dx.doi.org/10.4191/kcers.2013.50.3.206

Effect of WO3 or Ga2O3 Addition on the Phase Evolution and Properties of Y2O3-Doped AlN Ceramics  

Shin, Hyunho (Department of Advanced Ceramic Materials Engineering, Gangneung-Wonju National University)
Yoon, Sang-Ok (Department of Advanced Ceramic Materials Engineering, Gangneung-Wonju National University)
Kim, Shin (Department of Advanced Ceramic Materials Engineering, Gangneung-Wonju National University)
Hwang, Injoon (Department of Advanced Ceramic Materials Engineering, Gangneung-Wonju National University)
Publication Information
Journal of the Korean Ceramic Society / v.50, no.3, 2013 , pp. 206-211 More about this Journal
Abstract
The effect of a $WO_3$ or $Ga_2O_3$ addition on the densification, phase evolution, optical reflectance, and elastic and dielectric properties of $Y_2O_3$-doped AlN ceramics sintered at $1800^{\circ}C$ for 3 h is investigated. The investigated compositions of the additives are 4.5 wt% $Y_2O_3$ (YA), 3.5 wt% $Y_2O_3$-1.0 wt% $Ga_2O_3$ (YGA), and 3.5 wt% $Y_2O_3$-1.0 wt% $WO_3$ (YWA). $YAlO_3$ and $Y_4Al_2O_9$ form as the secondary phases in all of the investigated compositions, whereas $W_2B$ appears additionally in the YWA. In the YGA, Ga is detected in the AlN grains, indicating that the dissolution of $Ga_2O_3$ into the AlN lattice occurs. The addition of $WO_3$ blackens the specimen more significantly than that of $Ga_2O_3$ does. In all of the investigated specimens, the linear shrinkage and the apparent density are above 20 percent and in the range of 3.34-3.37 $g/cm^3$, respectively. The elastic modulus, Poisson's ratio, the dielectric constant, and the dielectric loss are in the ranges of 335-368 GPa, 0.146-0.237, 8.60-8.63, $2.65-3.95{\times}10^{-3}$, respectively. The sinterability and the properties of $Y_2O_3$-doped AlN ceramics are not much altered by the addition of $WO_3$ or $Ga_2O_3$.
Keywords
AlN; $WO_3$; $Ga_2O_3$; Phase evolution; Elastic property; Dielectric property;
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