• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.5
• /
• pp.168-173
• /
• 2020

To analyze and describe the behavior and mechanisms occurring in the thermal oxidation process of AlN, bulk AlN single crystals were thermally treated with different temperatures. As a result, it was confirmed that full-scale oxidation of bulk AlN and growth of Al-oxide occurred from the temperature of 800℃, which confirmed that the weight% of O elements tended to increase while the N elements decreased with increasing the temperature. In the case of thermal treatment at 900℃, the grown Al-oxides were merged with neighboring Al-oxides and began to form α-Al₂O₃ poly-crystals. During thermal treatment at the temperature of 1000℃, hexagonal pyramidal shaped poly-crystalline α-Al₂O₃ was clearly observed. Through the X-ray diffraction pattern analysis, the changes of surface crystal structure according to the temperature of bulk AlN were investigated in detail.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.37-38
• /
• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• Journal of the Korean Chemical Society
• /
• v.54 no.4
• /
• pp.380-386
• /
• 2010

We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted $Al_2O_3$ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.5
• /
• pp.273-277
• /
• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• Korean Journal of Materials Research
• /
• v.12 no.11
• /
• pp.845-849
• /
• 2002

Alloys of $Fe_3$Al, $Fe_3$Al-6Cr, $Fe_3$Al-4Cr-1Mo, $Ni_3$Al, and $Ni_3$Al-2.8Cr were oxidized at $1000^{\circ}C$ in air, and the oxide scales formed were studied using XRD. SEM, EPMA, and TEM. The oxide scales that formed on $Fe_3$Al-based alloys consisted primarily of $\alpha$-$Al_2$$O_3$ containing a small amount of dissolved Fe and Cr ions, whereas those that formed on $Ni_3$Al-based alloys consisted primarily of $\alpha$-$Al_2$$O_3$, together with a small amount of $NiAl_2$$O_4$, NiO and dissolved Cr ions. For the entire alloys tested, nonadherent oxide scales formed, and voids were inevitably existed at the scale-matrix interface.

• Toxicological Research
• /
• v.34 no.4
• /
• pp.343-354
• /
• 2018

Aluminum oxide nanoparticles ($Al_2O_3$ NPs) are among the most widely used nanomaterials; however, relatively little information about their risk identification and assessment is available. In the present study, we aimed to investigate the potential toxicity of $Al_2O_3$ NPs following repeated inhalation exposure in male Sprague-Dawley rats. Rats were exposed to $Al_2O_3$ NPs for 28 days (5 days/week) at doses of 0, 0.2, 1, and $5mg/m^3$ using a nose-only inhalation system. During the experimental period, we evaluated the clinical signs, body weight change, hematological and serum biochemical parameters, necropsy findings, organ weight, and histopathology findings. Additionally, we analyzed the bronchoalveolar lavage fluid (BALF), including differential leukocyte counts, and aluminum contents in the major organs and blood. Aluminum contents were the highest in lung tissues and showed a dose-dependent relationship in the exposure group. Histopathology showed alveolar macrophage accumulation in the lungs of rats in the $5mg/m^3$ group during exposure and recovery. These changes tended to increase at the end of the recovery period. In the BALF analysis, total cell and neutrophil counts and lactate dehydrogenase, tumor necrosis factor-${\alpha}$, and interleukin-6 levels significantly increased in the 1 and $5mg/m^3$ groups during exposure. Under the present experimental conditions, we suggested that the no-observed-adverse-effect level of $Al_2O_3$ NPs in male rats was $1mg/m^3$, and the target organ was the lung.

• Journal of the Optical Society of Korea
• /
• v.18 no.6
• /
• pp.685-690
• /
• 2014

Microholographic gratings were prepared on an aluminum oxide ($Al_2O_3$) surface using a 140-fs pulse at a center wavelength of 800 nm. The $Al_2O_3$ was deposited on a silicon wafer and on indium tin oxide glass to a thickness of approximately 25 nm using an atomic layer deposition process. The silicon wafer substrate exhibited reflection-type gratings that were measured as a function of the incidence angle. The diffraction efficiency of the fabricated gratings was measured, with a maximum diffraction efficiency of 45% at an incidence angle of approximately $30^{\circ}$.

• Journal of the Korean Vacuum Society
• /
• v.16 no.5
• /
• pp.322-329
• /
• 2007

The interaction of oxygen with the ordered $Ni_3Al(111)$ alloy surface at 800 K and 1000 K has been investigated using LEED, STM, HREELS, UPS, and PAX. The clean $Ni_3Al(111)$ surface exhibits a "$2{\times}2$" LEED pattern corresponding to the ordered bulk-like terminated surface structure. For an adsorption of oxygen at 800 K, LEED shows an unrelated oxygen induced superstructure with a lattice spacing of $2.93\;{\AA}$ in addition to the ($1{\times}1$) substrate spots. The combined HREELS and the UPS data point to an oxygen chemisorption on threefold aluminum sites while PAX confirms an islands growth of the overlayer. Since such sites are not available on the $Ni_3Al(111)$ surface, we conclude the buildup of an oxygen covered aluminum overlayer. During oxygen exposure at 1000 K, however, we observe the growth of ${\gamma}'-Al_2O_3$ structure on the reordered $Ni_3Al(111)$ substrate surface. This structure has been identified by means of HREELS and STM. The HREELS data will show that at 800 K the oxidation shows a very characteristic behavior that cannot be described by the formation of an $Al_2O_3$ overlayer. Moreover, the STM image shows a "Strawberry" structure due to the oxide islands formation at 1000 K. Conclusively, from the oxygen interaction with $Ni_3Al(111)$ alloy surface at 800 K and 1000 K an islands growth of the aluminum oxide overlayer has been found.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.418.1-418.1
• /
• 2016

Atomic layer deposition (ALD)를 이용하여 증착된 aluminum oxide ($Al_2O_3$)는 우수한 패시베이션 특성을 가지고 있다. $Al_2O_3$ 박막은 많은 수소를 가지고 있기 때문에 화학적 패시베이션에 의한 실리콘 표면을 패시베이션 할 수 있다. 또한 $Al_2O_3$는 강한 고정전하를 가져 전계 효과 패시베이션을 할 수 있다. 따라서 $Al_2O_3$ 박막을 태양전지에 적용할 경우 높은 효율을 기대할 수 있다. 실리콘 태양전지를 제작하기 위해 소성공정(> $800^{\circ}C$)은 필수이다. $Al_2O_3$ 박막은 많은 수소를 가지고 있기 때문에 소성공정시 수소가스를 방출하여 $Al_2O_3$ 박막에 블리스터를 형성시킨다. 이 블리스터는 $Al_2O_3/Si$ 계면에서 발생하여 패시베이션 특성을 감소시킨다. 블리스터를 억제하기 위해 수소의 양을 조절할 필요가 있다. 이 실험에서는 plasma-assisted atomic layer deposition (PAALD)으로 $Al_2O_3$를 증착하였다. PAALD의 RF power를 200 W부터 800 W까지 조절하여 $Al_2O_3$ 막에 포함되는 OH의 농도를 조절하였다. $Al_2O_3$ 박막에 포함되는 OH 농도는 X-ray Photoelectron Spectroscopy (XPS)를 이용하여 분석하였다. 열처리공정 후, 화학적 패시베이션에 의한 유효 반송자 수명 (${\tau}_{eff}$) 향상이 나타났다 소성공정 후 블리스터가 형성되지 않는 조건에서 화학적 패시베이션과 전계 효과 패시베이션에 의해 ${\tau}_{eff}$가 증가하였다. 블리스터가 형성되었을 때 기존 논문들과 같이 패시베이션 특성이 감소하였다. 패시베이션 특성의 감소는 블리스터에 의한 화학적 패시베이션의 감소 때문이며 전계 효과 패시베이션은 오히려 증가하였다. 이를 통해 고온에서 열안정성을 갖는 $Al_2O_3$ 박막을 만들었으며 블리스터가 형성되지 않았고 패시베이션 특성이 증가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.3
• /
• pp.277-283
• /
• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.