• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.338-341
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• 2002

$(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.27-28
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• 2009

In this study, we have fabricated the 3 wt% $Li_2CO3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd printed $Al_2O_3$ substrates for the LTCCs (Low Temperature Co-fired Ceramics) applications. From the X-ray diffraion analysis, 3 wt% $Li_2CO3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at 900 $^{\circ}C$ have perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO3$ doped BST thick films were measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO3$ doped BST thick films, we employed the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO3$ doped BST thick films were measured from 20 Hz to 1 MHz at the various temperatures.

• 센서학회지
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• 제11권1호
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• pp.18-27
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• 2002

스크린 프린팅법으로 $Al_2O_3$ 기판 위에 $LaFeO_3$를 기본물질로 하여 $Al_2O_3$를 각각 2Wt.%, 5wt.%, 10wt.%를 첨가한 후막을 제조하였다. 열처리 온도에 따른 후막의 구조적, 전기적 특성과 암모니아 가스에 대한 감지특성을 조사하였다. X선 회절에서, 첨가한 $Al_2O_3$는 $1200^{\circ}C$까지의 열처리에도 $LaFeO_3$와 반응하여 화합물을 형성하지 않음을 확인하였다. 전자현미경 사진에서 $Al_2O_3$의 첨가량에 따른 열처리에 대한 입자의 변화는 차이를 보이지 않았다. 후만의 전기적 특성에서 활성화 에너지가 높고 전기저항이 작은 시료에서 가스감도가 좋았다. $Al_2O_3$를 2wt.% 첨가하여 $1200^{\circ}C$에서 열처리한 후막은 100ppm $NH_3$ 가스에 대해 동작온도 $350^{\circ}C$에서 210%의 감도를 보였다. 이 후막은 $NH_3$ 가스에 대해 우수한 선택성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.192-192
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• 2009

We have successfully demonstrated the inkjet printing process to fabricate $Al_2O_3$ thick films without a high temperature sintering process. A single solvent system had a coffee ring pattern after printing of $Al_2O_3$ dot, line and area. In order to fabricate the smooth surface of $Al_2O_3$ thick film, we have introduced a co-solvent system which has nano-sized $Al_2O_3$ powders in the mixture of Ethylene glycol monomethyl ester and Di propylene glycol methyl ether. This co-solvent system approached a uniform and dense deposition of $Al_2O_3$ powders on the substrate. The packing density of inkjet-printed $Al_2O_3$ films is more than 70% which is very high compared to the value obtained from the films synthesized by other conventional methods such as casting processes. The characterization of the inkjet-printed $Al_2O_3$ films has been implemented to investigate its thickness and roughness. Also the dielectric loss of the films has been measured to understand the feasibility of its application to 3D integration package substrate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.180-182
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• 2004

Polycrystalline $BaTiO_3/SrTiO_3$ powder was prepared by sol-gel process and the multilayered thick films were prepared on the $Al_2O_3$ substrates by screen printing method. The films were sintered at $1400^{\circ}C$ for 2 hours in the air. The structural and dielectric properties were investigated, The X-ray diffraction (XRD) patterns indicate that the BST phase and porocity were formed in the interface of $BaTiO_3/SrTiO_3$ multilayered thick films. The dielectric constant and the dielectric loss of the BT/ST/BT/ST multilayered thick films were about 247 and 0.84% at 1MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.171-171
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• 2009

We have investigated the impact of coffee ring effect on the inkjet-printed $Al_2O_3$ thick films. In a single solvent system such as Dimethylformamide, the coffee-ring-pattern has appeared on the edge of sessile drop after evaporation. The peak-to-valley height difference in $Al_2O_3$ coffee ring is over 2um. This non-uniform deposition of $Al_2O_3$ over the surface leads to sever surface roughness of the inkjet-printed films. However, we have manipulated our printing parameters to improve the surface roughness and the packing density of the printed $Al_2O_3$ films. Our inkjet-printed $Al_2O_3$ films show 10 times smoother surface than the initially printed sample's surface. Also the packing density of the printed Ah03 film becomes 70% of high packed $Al_2O_3$. In this presentation, we would like to present the key process parameters of the inkjet printing process to overcome the genetic coffee ring problem.

• 한국재료학회지
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• 제11권12호
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• pp.1080-1085
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• 2001

Dielectric properties and leakage current characteristics of 100 nm-thick $Ta_2O_5/Al_2O_3$multilayer thin films, which were fabricated by reactive sputtering of$Al_2O_3$and$Ta_2O_5$ successively on top of each other for total 9 layers, have been investigated with variation of the$Al_2O_3$content$(i.e,\;Ta_2O_5/Al_2O_3 \;thickness\;ratio)$.$Ta_2O_5/Al_2O_3$films were amorphous regardless of the$Al_2O_3$content. With increasing the$Al_2O_3$content from 0% to 100%, refractive index of the $Ta_2O_5/Al_2O_3$films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the$Al_2O_3$content was in good agreement with the behavior that was obtained by assuming parallel capacitors of$Al_2O_3$and Ta_2O_5$. Leakage current characteristics of $Ta_2O_5/Al_2O_3$ multilayer films were superior to those of $Ta_2O_5$ and$Al_2O_3$films. $Ta_2O_5/Al_2O_3$ films of 5% and 10%$Al_2O_3$content exhibited excellent leakage current densities which were lower than $10^{-7} A/cm^2$ at 1MV/cm.

• 한국세라믹학회지
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• 제40권8호
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• pp.715-719
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• 2003

The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $\alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.