• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.279-285
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• 1998

The $UO_2$ pellets are usually sintered under hydrogen gas atmosphere. Hydrogen gas may cause unexpected early failure of the refractory bricks in the sintering furnace. In this work, nitrogen was mixed with hydrogen to investigate the effect of nitrogen gas on a failure machanism of the refractory bricks and on the microstructure of the $UO_2$ pellet. The hydrogen-nitrogen mixed gas experiments show that the larger nitrogen the mixed gas contains, the less the refractory materials are reduced by hydrogen. The weight loss measurements at $1400^{\circ}C$ for fire clay and chamotte refractories containing high content of $SiO_2$ indicate that the weight loss rate for the mixed gas is about half of that for the hydrogen gas. Based on the thermochemical analyses, it is proposed that the weight loss is caused by hydrogen-induced reduction of free $SiO_2$ and/or $SiO_2$ bonded to $Al_2O_3$ in the fire clay and chamotte refractories. However, the retardation of the hydrogen-induced $SiO_2$ reduction rate under the mixed gas atmosphere may be due to the reduction of the surface reaction rate between hydrogen gas and refractory materials in proportion to volume fraction of nitrogen gas in the mixed gas. On the other hand, the mixed gas experiments show that the test data for $UO_2$ pellet still meet the related specification values, even if there exists a slight difference in the pellet microstructural parameters between the cases of the mixed gas and the hydrogen gas.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.275-284
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• 2018

In the ball milling process of ceramic powders, according to economic considerations for industrial applications, it is very important to quickly determine the optimum process condition with the maximum grinding efficiency. However, it is still difficult to determine the optimum condition for a ball mill with respect to the various process parameters, such as the rotational speed and the milling time. Ball milling was carried out at the same starting conditions with given amounts of alumina powders, balls and water, and was conducted slower or faster or a critical rotational speed was just determined by observing the angular position of the slurry in a semi-translucent polyethylene laboratory container. With respect to the different rotational speeds, which were slower or faster than the critical rotational speed, the particle size distribution of the grained powders and the acoustic intensity caused by cascading of the balls led to various behaviors. From the results of the particle size distribution and the acoustic signal analysis in the ball milling, there was one rotational speed that made the finest milled powder with maximum acoustic intensity. As a result, there was a correlation between the ground particle size and the acoustic intensity, which yields the interpretation that it can be possible in-situ to determine the optimum condition of ball milling by acoustic signal without repeated measurement efforts.

• The Journal of Advanced Prosthodontics
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• v.6 no.1
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• pp.8-13
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• 2014

PURPOSE. The purpose of this study was to evaluate whether surface treatments affect the translucency of laminate veneers with different shades and thicknesses. MATERIALS AND METHODS. A total of 224 disc-shaped ceramic veneers were prepared from A1, A3, HT (High Translucent) and HO (High Opaque) shades of IPS e.max Press (Ivoclar Vivadent) with 0.5 mm and 1.0 mm thicknesses. The ceramics were divided into four groups for surface treatments. Group C: no surface treatments; Group HF: etched with hydrofluoric acid; Group SB: sandblasted with 50-${\mu}m$ $Al_2O_3$; and Group L; irradiated with an Er;YAG laser. A translucent shade of resin cement (Rely X Veneer, 3M ESPE) was chosen for cementation. The color values of the veneers were measured with a colorimeter and translucency parameter (TP) values were calculated. A three-way ANOVA with interactions for TP values was performed and Bonferroni tests were used when appropriate (${\alpha}=0.05$). RESULTS. There were significant interactions between the surface treatments, ceramic shades and thicknesses (P=.001). For the 0.5-mm-thick specimens there were significant differences after the SB and L treatments. There was no significant difference between the HF and C treatments for any shades or thicknesses (P>.05). For the 1-mm-thick ceramics, there was only a significant difference between the L and C treatments for the HT shade ceramics (P=.01). There were also significant differences between the SB and C treatments except not for the HO shades (P=.768). CONCLUSION. The SB and L treatments caused laminate veneers to become more opaque; however, HF treatment did not affect the TP values. When the laminate veneers were thinner, both the shade of the ceramic and the SB and laser treatments had a greater effect on the TP values.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.279-284
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• 2010

This study has been carried out to determine the optimal process conditions of $AZO:H_2$ thin films for the maximization of the transmittance of a blue GaN light-emitting diode (LED) with a wavelength of 470 nm. The Al-doped zinc oxide $(AZO):H_2$ thin films were deposited on a sapphire substrate by radio-frequency magnetron sputtering system with varying substrate temperatures, working pressures and annealing temperatures temperature, working pressure and annealing imposed on a AZO (2wt% $Al_2O_3$) ceramic target. The effect of these variables was investigated in order to improve the light extraction efficiency of the LED. As a result, the (002)-oriented peak was found in all the $AZO:H_2$ thin films. The lowest resistivity and the best transmittance at a wavelength of 470 nm was found to be $4.774\;{\times}\;10^{-4}\;{\Omega}cm$ and 92% at a substrate temperature of $500^{\circ}C$, working pressure of 7 mTorr and annealing temperature of $400^{\circ}C$. The transmittance of the $AZO:H_2$ thin film for the Blue GaN LED was improved by approximately 13% relative to that of a ITO thin film (T = 79%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.381-384
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• 2001

The $\beta$-SiC+ZrB$_2$ and $\beta$-SiC+TiB$_2$ceramic electroconductive composites were pressureless-sintered and annealed by adding l2wt% A1$_2$ $O_3$+Y$_2$ $O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density showed highest value of 84.92% of the theoretical density for SiC-TiB$_2$ at 190$0^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), TiB$_2$, $Al_{5}$Y$_2$ $O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 230 MPa for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 6.50 MPa . m$^{1}$2/ for SiC-ZrB$_2$ composites at 190$0^{\circ}C$. The electrical resistivity was measured by the Rauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.1
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• pp.73-79
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• 2011

In this study, coring with diamond core drill on the sintered $Al_2O_3$ ceramic plate were carried out with different coring conditions such as various cutting speed and feed rate to evaluate their effectiveness on the wearing behavior of diamond tool and coring quality. The wearing rate of diamond core drill were getting better with increasing cutting speed and feed rate but the quality of cored hole were getting worse as increasing cutting speed and feed rate.

• Laser Solutions
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• v.11 no.1
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• pp.25-31
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• 2008

The characteristics of femtosecond laser ablation of $Al_2O_3$ for prescision microfabrication are studied experimentally. Specifically, the process time during femtosecond laser drilling of microholes with $sub-100{\mu}m$ diameter are investigated for varying laser fluence, scan speed and beam path designs like trepanning with continuously changed start points. The accumulation of sub-micrometer size particles within the hole and the deterioration of edge clarity and roundness for decreasing hole diameter are examined and through process optimization the microdrilling with good hole quality is achieved using a femtosecond laser system (repetitionrate 1 kHz, wavelength 785 nm, pulse duration 185 fs)