• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.626-633
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• 1998

For the fabrication of low temperature cofirable glass/ceramic with high dielectric constant, crystallizing glass [$SiO_2-TiO_2-RO (RO:BaO, CaO:SrO)$] was formed. The glass/ceramic composites were made by mixing this glass and alumina ceramic as filler, and its characteristics was investigated. With this glass compositon, it was possible to fabricate the glass which could be crystallized under $900^{\circ}C$. And it was found that the crystallizing temperature was changed in accordance with the composition of RO in glass. By adding $Bi_2O_3$ as flux, using $Al_2O_3$ as filler and sintering at $860^{\circ}C$, low temperature cofirable glass/ceramic with high dielectric constant was fabricated. The density of that composites was 3.96 g/$\textrm{cm}^3$, dielectric constant was 17 and Q. f was 600.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.416-417
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• 2006

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely [2-(2-hydroxyphenyl)benzoxazole] ($Zn(HPB)_2$) and [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q), which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO/PEDOT:PSS (23 nm)/NPB (40 nm)/$Zn(HPB)_2$ (40 nm)/Zn(HPB)q (20 nm)/$Alq_3$ (10 nm)/LiAl (120 nm). As a result, we obtained a maximum luminance of $15325\;cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE(Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• Journal of Korea Foundry Society
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• v.42 no.6
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• pp.337-346
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• 2022

In order to optimize the solution treatment conditions of Al-7Si-(0.3~0.5)Mg-(0~0.5)Cu alloys, a series of heat treatment experiments were conducted under various solution treatment times up to 7 hours at 545℃, followed by a microstructural analysis using optical microscopy, FE-SEM, and Brinell hardness measurements. Rapid coarsening of eutectic Si particles was observed in the alloys during the first 3 hours of solution treatment but the size of those Si particles did not change at longer solution treatment conditions. Meanwhile, the degree of spheroidisation of eutectic Si particles increased until the solution treatment time was increased up to 7 hours. Q-Al5Cu2Mg8Si6 andθ-Al2Cu were observed in as-cast Cu-containing Al alloys but the intermetallic compounds were dissolved completely after 3 hours of solution treatment at 545℃. Depending on the initial Mg composition of the Al alloys, π-Al8FeMg3Si either disappeared in the alloy with 0.3wt% of Mg content after 5 hours of solution treatment or remained in the alloy with 0.5wt% of Mg content after 7 hours of solution treatment time. Mg and Cu content in the primary-α phase of the Al alloys increased until the solution treatment time reached 5 hours, which was in accordance with the dissolution behavior of Mg or Cu-containing intermetallic compounds with respect to the solution treatment time. From the results of microstructural changes in the Al-7Si-Mg-Cu alloys during solution treatment, it was concluded that at least 5 hours of solution treatment at 545℃ is required to maximize the age hardening effect of the present Al alloys. The same optimal solution treatment conditions could also be derived from Brinell hardness values of the present Al-7Si-Mg-Cu alloys measured at different solution treatment conditions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.34-42
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• 2000

Recently, there is a growing need to develope small-size RF chip inductors operating to GHz to realize high-performance, micro-fabricated wireless communication products. For the development of high-performance RF chip inductors, however, the ferrite-based chip inductors can not be used above 300MHz due to the limitation of the permeability of this material. In this work, small-size, high-performance RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. Copper (Cu) with 40${\mu}m$ diameter was used as the coils and the chip inductor size fabricated in this work is $2.1mm{\times}1.5mm{\times}1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on the bottom edges of a core material. The composition of core materials was measured using a EDX. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The developed inductors have the self-resonant frequency (SRF) of 1 to 3.5 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1679-1683
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• 2018

Polycrystalline $BaSrCo_2(Fe_{1-x}Al_x)_{12}O_{22}$ (x = 0.00, 0.01, 0.05, and 0.10) samples were synthesized by polymerizable complex method. Based on the Rietveld refinement, crystal structures of the samples were found to be single-phased and determined to be rhombohedral with space group of R-3m. The hysteresis curves of the samples were measured under 15 kOe at various temperatures ranging from 4.2 and 295 K. It shows that they were not saturated with increasing Al ion contents due to the reduction of magnetic anisotropy. $M_{15kOe}$ was decreased with increasing Al ions contents. We expect that non-magnetic Al ions preferentially occupy the up-spin site of $18h_{VI}$, $3b_{VI}$, and $3a_{VI}$. The $M{\ddot{o}}ssbauer$ spectra of the samples were obtained at 295 K, and analyzed with sixsextets for Fe sites corresponding to the Y-type hexaferrite crystallography sites. The <$E_Q$> shows abrupt changes, and the <$H_{hf}$> shows abrupt decreases around x = 0.05 due to the coexistence of magnetic secondary phases.

• Microbiology and Biotechnology Letters
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• v.13 no.3
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• pp.251-255
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• 1985

Nitrogen-fixing bacteria were isolated from the rice rhizosphere of various paddy fields in our country. The screening of 235 isolates for nitrogen-fixing ability resulted in the isolation of Enterobacter agglomerans NFB264 and three Klebsiella pneumoniae NFB 3, NFB 320. Plasmids of various molecular weight from 1.7 to more than 84 Mal. were detected by agarose gel electrophoresis in three out of four isolates. But, these plasmids had not any nitrogen-fixing genes. Hybridization experiments using Klebsiella pneumoniae M5al nitrogen-fixing genes, nif Q-K and nif DH, as probes revealed the presence of homologous sequences in the chromosomal DNA of all isolates. However the restriction patterns of nif genes of the isolates by various restriction endonucleases were different to those of Klebsiella pneumoniae M5al.

• Journal of Life Science
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• v.15 no.6 s.73
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• pp.972-978
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• 2005

The present study was carried out to investigate the blood markers of Jeju horses. The redcell cypes (blood groups) and blood protein types (biochemical polymorphisms) were tested from 102 Jeju horses by serological and electrophoretc procedure, and their phenotypes and gene frequencies were estimated. The blood group and biochemical polymorphism phenotypes observed with high frequency were $A^{af}\;(27.45\%$), $C^{a}\;(99.02\%$), $K^{-}\;(97.06\%$), $U^{a}\;(62.75\%$), $P^{b}\;(36.27\%$), $Q^{c}\;(47.06\%$), $D^{cgm/dghm}\;(13.73\%$), $D^{adn/cgm}\;(9.80\%$), $D^{ad/cgm}$\;(8.82\%$), $D^{dghm/dghm}(7.84\%$), $D^{cgm/cgm}(7.84\%$), $AL^{B}\;(48.04\%$), $GC^{F}\;(99.02\%$), $AlB^{K}\;(97.06\%$), $ES^{FI}\;(36.27\%$), $TF^{F2}\;(25.49\%$), $HB^{B1}\;(45.10\%$), and $PGD^{F}\;(86.27\%$) in Jeju horses, respectively. Alleles observed with high gene frequency were $A^{af}$ (0.3726), $A^{C}$ (0.2647), $C^{-}$ (0.5050), $K^{-}$ (0.9853), $U^{-}$ (0.6863), $P^{b}$ (0.4657), $Q^{c}$ (0.5294), $D^{cgm}$ (0.3039), $HB^{B1}$(0.6863), $PGD^{F}$ (0.9265), $AL^{B}$ (0.6912), $ALB^{K}$ (0.9852), $GC^{F}$ (0.9950), $ES^{I}$ (0.5000) and $TF^{F2}$ (0.4950) in Jeju horses, and sfecific alleles, $D^{cgm(f)}$ (0.0196), $HB^{A}$ (0.0147), $HB^{A2}$ (0.0196), $ES^{G}$ (0.0441), $ES^{H}$ (0.0098), $TF^{E}$TF'(0.0246), $TF^{H2}$ (0.0049) and $PGD^{D}$ (0.0098) were detected in Jeju horses. These preliminary results present basic information for detecting the genetic markers in Jeju horse. and developing a system for parentage verification and individuals identification in jeju horses.