• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.322-323
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• 2008

Multi layered thin films with ZnS/$Na_3AlF_6$/ZnS were deposited on glass substrate by thermal evaporator precess and simulated by using EMP(Essential Macleod Program). EMP is a comprehensive software package to design and analyse the optical characteristics of multi-layered thin film. ZnS and $Na_3AlF_6$ were selected as a high refractive index and low refractive index material respectively. Additionally Cu was chosen as mid reflective material. Optical properties including color effect were systematically studied. in terms of different optical thickness of low refractive index material. The optical thickness of $Na_3AlF_6$ was changed as 0.25, 0.5, 0.75 and $1.0\lambda$. The film with 0.25, 0.5, 0.75 and $1.0\lambda$. of optical thickness showed mixed color range between bluish green and red purple, yellowish green and bluish green, purple and mixed color range of green and purple respectively.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.58-62
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• 2001

The L $i_{0.5}$F $e_{2.5-x}$A $l_{x}$ $O_4$ systems (x=0, 0.3, 0.6, 0.9, 1.2, 1.5) were investigated by X-ray diffraction and Mossbauer spectroscopy. The structure of all the samples is cubic spinel type and lattice constant decrease with increasing Al content x. The Moissbauer spectra reveal two sextet for 0$\leq$x$\leq$0.6, two sextet and a doublet for 0.9$\leq$x$\leq$1.2, and a doublet for x=1.5. The cation distribution of the samples is (L $i_{1-a}$$^{+}$F $e_{a}$ $^{3+}$)$^{A}$[L $i_{a-0.5}$$^{+}$A $l_{2.5-a-x}$$^{+}$F $e_{2.5-a-x}$$^{3+}$]$^{B}$ $O_4$$^{2-}$ and substituted $Al^{3+}$ ions decrease the covalency of F $e^{3+}$- $O^{2-}$ bond in B-sites and A-B super-exchange interactions.tions.s.tions.ons.s.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1229-1233
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• 2000

(1-x)NdAlO$_3$-xCaTiO$_3$세라믹스의 결정구조와 마이크로파 유전특성을 조사하였다. 시편의 결정구조는 조성에 따라서 변화하였는데, 그 결정구조는 x$\leq$0.1일 때는 능면정(rhombohedral) 구조를, 0.3$\leq$x$\leq$0.7에서는 정방정 (tetragonal) 구조를 그리고, x$\geq$0.7일 때 다시 사방정 (orthorhombic) 구조로 바뀌었다. 또한 (1-x)NdAlO$_3$-xCaTiO$_3$세라믹스에서 이차상의 두 종류가 발견되었다. x$\leq$0.5인 시편에서는 Nd$_4$Al$_2$O$_{9}$상이, x$\geq$0.7인 시편에서는 Al-rich상이 발견되었다. x가 증가함에 따라, 유전율 ($\varepsilon$$_{r}$)과 공진주파수의 온도계수 ($ au$$_{f}$ )가 증가하였고, Q$\times$f 값은 x의 증가에 따라 증가하며, x=0.5일 때 최대값을 얻었다. 그리고 0.3NdAlO$_3$-0.7CaTiO$_3$에서 Q$\times$f=46,000, $\varepsilon$$_{r}$=45 그리고 $\tau$$_{f}$ =-1.5 ppm/$^{\circ}C$의 우수한 마이크로파 유전특성을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Polymer(Korea)
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• v.30 no.3
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• pp.253-258
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• 2006

We have fabricated vortical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc, NTCDA, PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage (I-V) characteristics and on/off ratios were investigated. The vortical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.363-364
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• 2005

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 3종류 의 glass를 선정하고 filler로 $Al_2O_3$ 와 $TiO_2$를 사용하여 glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 lead-borosilicate(PBS), zinc-borosilicate(ZBS), bismuth-borosilicate(BBS) glass 조성을 사용하였고 1100~$1400^{\circ}C$에서 melting시킨 후 quenching하여 frit화하였다. $Al_2O_3$와 $TiO_2$ filler에 10~50 vol%로 glass frit을 각각 혼합한 후 600~$950^{\circ}C$에서 2시간 동안 소결한 결과 50 vol% glass frit 일 때 $900^{\circ}C$ 이하에서 소성이 가능하였다. 유전특성은 $900^{\circ}C$에서 $Al_2O_3$-50vol%PBS($\varepsilon_{r}$=8.8, $Q{\times}f_o$=4,900, $\tau_f$=-24), $Al_2O_3$-50vol% ZBS($\varepsilon_{r}$=5.7, $Q{\times}f_o$=17,800, $\tau_f$=-21), $Al_2O_3$-50vol%BBS($\varepsilon_{r}$=11.1, $Q{\times}f_o$= 2,080, $\tau_f$=-48), $TiO_2$-50vol%PBS($\varepsilon_{r}$=18.6, $Q{\times}f_o$=3,800, $\tau_f$=+135), $TiO_2$-50vol%ZBS($\varepsilon_{r}$=36.4, $Q{\times}f_o$= 7,500, $\tau_f$=+159), $TiO_2$-50vol%BBS($\varepsilon_{r}$=56.4, $Q{\times}f_o$=520, $\tau_f$=+119)을 나타내었다. 따라서 LTCC용 기판재료 및 마이크로파 유전체로 응용이 가능한 것으로 확인되었다.

• Journal of Environmental Science International
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• v.22 no.9
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• pp.1097-1103
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• 2013

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.118-124
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• 2004

The properties of AlN made by carbothermal reaction depend on the starting materials, quantity of liquid, the liquid-vapor phase reaction, the N$_2$ flow rate, and the reaction temperature. AlN whisker was synthesized by the VLS and VS methods. Solid ${\alpha}$-A1$_2$O$_3$(AES-11) was carbothermally reduced with carbon black in a high-purity N$_2$ atmosphere with AlF$_3$ to cause whisker grown and additional aluminum liquid to increase whisker yield. Aluminum nitride was perfectly formed at reaction temperatures of 1600$^{\circ}C$. At reaction temperature higher than 1600$^{\circ}C$ the aluminum nitride was completely formed, while the composition remains unaffected. Needle-shaped whiskers formed best at 1600$^{\circ}C$ while higher temperatures disrupted whisker formation. Adding 0 to 15 wt% aluminum to the synthesis favorably affects the microstructure for formation of needle-shaped AlN whisker. Additions over 15 wt% degraded formation of AlN whisker.

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.321-328
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• 1987

The chemical durability of six alumino fluorophosphate glass samples studied. The composition of glass varied with MgF2 content from 0 to 12.5wt% in 30AlF3-2MgF2-(50-x)MF2-10P2O5(M; Sr, Ba). Samples were maintained in distilled water at 95$^{\circ}C$ from 1 to 100hrs. Weight loss, pH change and leached elements of the solution, and IR transmittance of samples were measured and also their surfaces were observed by SEM. Chemical durabilities of these samples were increased with increasing MgF2 contents. The following various properties were increased rapidly up to 10 hours after that changed slowly. The sample after leached at 95$^{\circ}C$ during 100 hrs showed 0.5mg/$\textrm{cm}^2$ in weight loss. The pH of leached solution is 6.2 and concentration of Mg, Sr, and Ba element of that leached solution were 24,115 and 125 ppm, respectively. The infrared transmittance of leached sample decreased 7% compare to unleached one. And also SEM photomicrograph and EDS analysis showed that the corrosion of samples were decreased with respect to increasing MgF2 content.