• 한국재료학회지
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• 제12권7호
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• Bulletin of the Korean Chemical Society
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• 제24권6호
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• pp.739-743
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• 2003

New quaternary compounds $ANb_2PS_{10}$ (A = Na, Ag) and $AuNb_4P_2S_{20}$ were synthesized and characterized. The structures of three compounds consist of one-dimensional infinite chains built by [$Nb_2S_{12}$] and [$PS_4$] units. Cation atoms are occupied within the van der Waals gap of sulfur atoms between infinite chains to make -S…$M^+$…S- contacts. There is only one Au atom site and so crystallographically a unit cell contains four equivalent Au atoms in $AuNb_4P_2S_{20}$. This is only the half of the numbers of Na or Ag atoms in $NaNb_2PS_{10}$ or $AgNb_2PS_{10}$. The ratio between $Nb_2PS_{10}$ matrix vs the cation is, therefore, 1 : 1 for Ag and Na, but it is 2 : 1 for Au. Mixed valency in Au or Nb was expected to balance the charge in the latter compound. The electronic structures calculated based on the extended Huckel tight-binding method show that $ANb_2PS_{10}$ (A = Ag, Na) are semiconducting, while $AuNb_4P_2S_{20}$ is metallic, which is not consistent with the experimental results of these three compounds that all exhibit semiconducting property. The result of calculation suggests that $AuNb_4P_2S_{20}$ might be a magnetic insulator. Magnetic measurement experiment exactly proved that the compound is a Slater antiferromagnetic material with the Neels' temperature of 45 K. It is recognized, therefore, that electronic structure analysis is very useful to understand the properties of compounds.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2009

The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

• 한국재료학회지
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• 제30권11호
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• pp.601-608
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• 2020

In this work, Ag₃PO₄/In₂S₃ nanocomposites with low loading of In₂S₃ (5-15 wt %) are fabricated by two step chemical precipitation approach. The microstructure, composition and improved photoelectrochemical properties of the as-prepared composites are studied by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photocurrent density, EIS and amperometric i-t curve analysis. It is found that most of In₂S₃ nanoparticles are deposited on the surfaces of Ag₃PO₄. The as-prepared Ag₃PO₄/In₂S₃ composite (10 wt%) is selected and investigated by SEM and TEM, which exhibits special morphology consisting of lager size substrate (Ag₃PO₄), particles and some nanosheets (In₂S₃). The introduction of In₂S₃ is effective at improving the charge separation and transfer efficiency of Ag₃PO₄/In₂S₃, resulting in an enhancement of photoelectric behavior. The origin of the enhanced photoelectrochemical activity of the In₂S₃-modified Ag₃PO₄ may be due to the improved charge separation, photocurrent stability and oriented electrons transport pathways in environment and energy applications.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.

• Progress in Superconductivity
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• 제6권2호
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• pp.138-141
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• 2005

Bi-2223/Ag tapes need to be safe, even it is under the over-critical current state for the protection of a superconducting power machine. However, it is not easy to identify the condition for the safe operation because of their broad S/N transition region. In this paper, for the study of the operation condition of Bi-2223/ Ag tapes, we investigated the V-I curves and the temperature variation of Bi-2223/ Ag tapes experimentally, applying alternating over-currents, and analyzed the relationship between resistance and temperature increase. For the experiments, a Bi-2223/Ag tape of 57 A $I_c$ was prepared, and the over-critical current characteristics under adiabatic state from $LN_2$ was measured. From the experiments, we confirmed that the Joule heating predicted by V-I curve corresponded with the increase of the measured temperature exactly. Using the results, a safe operation condition of Bi-2223 tape was discussed.

• 대한소아치과학회지
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• 제49권4호
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• pp.497-504
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• 2022

연구의 목적은 2종의 액상형 불소 제재의 Streptococcus mutans에 대한 항균 효과를 평가하는 것이다. 불화은(AgF, 1제)과 요오드화칼륨(KI, 2제)로 구성된 Riva star aqua^TM (SDI)와 Fluor protector^® (FP; Ivoclar Vivadent)를 실험군에 사용하였다. 실험군은 4개의 군으로 구분하였다: AgF, KI, AgF + KI, FP. 양성 대조군(PC)에는 ampicillin을 사용하였고, 음성 대조군(NC)에는 아무런 처치도 시행하지 않았다. 각 군을 사용한 용액의 양에 따라 30과 50 µL로 다시 분류하였고, 평판 도말된 S. mutans에 적용하였다. 이후 억제대의 직경을 측정하였다. PC와 AgF는 모든 재료에 비해 큰 직경을 보였고(p < 0.05), AgF는 50 µL군에서 PC와 유의한 차이가 없었다(p > 0.05). FP는 30 µL군에서 AgF + KI 보다 큰 직경을 보였다(p = 0.009). KI는 NC와 유의한 차이가 없었다(p > 0.05). 불화은은 S. mutans에 대해 ampicillin과 유사한 항균효과를 보였으며, FP보다 더 뛰어남을 확인 하였다.

• 한국결정성장학회지
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• 제4권1호
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• pp.63-70
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• 1994

초이온도전체 ${\beta}-Ag_3SI$ 단결정을 AgI와 $AG_2S$의 혼합물을 반응시켜서 열처리하여 얻었다. 성장시킨 단결정은 직경 $200{mu}m$ 정도의 구상으로 성형시켰다. 실온에서 X-선 단결정 해석법을 이용하여 정밀한 결정구조 해석을 행했다. 이들 결정구조의 해석결과 ${\beta}-Ag_3SI$의 $Ag^+$는 6-배위의 3c자리보다 4-배위의 12h자리에 점유함이 밝혀졌다. $Ag^+$의 확률밀도분포(probabilty density function)로 부터 [110]방향에서 $Ag^+$의 one-particle potential(o.p.p.)을 계산하였다.${beta}-Ag_3SI$ 구조의(001)면에서 $Ag^+$가 확산에 필요한 활성화에너지는 0.012eV라는 것이 o.p.p.곡선에 의해 계산되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).