• Journal of Magnetics
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• v.15 no.1
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• pp.12-16
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• 2010

Combined study of in-situ stress measurements and atomic force microscopy (AFM) revealed drastic stress relaxation in the CoCrPt and PS(styrene)-PVP(vinyl pyridine) polymer hybrid structure that was closely related to the growth structure of the film. We have observed not only no large initial growth stress at the initial stages of film growth but also twice smaller stress in magnitude with opposite sign in the CoCrPt/PS-PVP/Si sample. The microstructural studies using AFM at the various film growth stages revealed that the film growth structure plays an important role in the stress relaxation mechanism of CoCrPt films on a corrugated polymer surface.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.118-122
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• 2009

Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.112-117
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• 1998

TiN has been investigated as a good candidate for a diffusion barrier of Cu. Therefore, in this study, the grain boundary diffusion of Cu in TiN film was investigated by X-ray photoelectron spectroscopy(XPS). In general, TiN has a columnar grain structure. In the relatively lower temperature, less than 1/3 of the melting point, it was observed that Cu diffused into TiN mainly along the grain boundaries of TiN. The grain size of TiN was measured by atomic force microscope (AFM). In order to estimate the grain boundary diffusion constants, we used the modified surface accumulation method. The activation energy, $Q_b$ was 0.23 eV, and the diffusivity, $D_{bo}$ was $5.5\times10^{-12{\textrm{cm}^2$/sec.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.59-62
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• 2005

Small force measurements ranging from 1 pN to $100{\mu}N$, we call it Nano Force, become the questions of common interests of biomechanics, nanomechanics, material researches, and so on. However, unfortunately, quantitative and accurate force measurements have not been taken so far. This is because there ,are no traceable force standards and a calibration scheme. This paper introduces a quantitative force metrology, which provides traceable link to SI (International Systems of Units). We realize SI traceable force ranging from 1 nN to $100{\mu}N$ using an electrostatic balance and disseminate it through transfer standards, which are self-sensing cantilevers that have integrated piezoresistive strain gages. We have been built a prototype electrostatic balance and Nano Force Calibrator (NFC), which is an AFM cantilever calibration system. As a first experiment, we calibrated normal spring constants of commercial AFM cantilevers using NFC. Calibration results show that the spring constants of them are quite differ from each other and nominal values provided by a manufacturer (up to 240% deviation).

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.214-217
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• 2022

The effect of inductively coupled plasma (ICP) treatment with O₂ gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O₂ plasma-treated PES films. The surface roughness of the pristine and O₂ plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O₂ plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

• Korean Journal of Food Science and Technology
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• v.44 no.2
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• pp.247-250
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• 2012

Raw milk samples (n=28) obtained from milk tanks in 3 dairy plants of different regions and commercial milks (n=100) were collected from six cities. These samples were analyzed for the level of aflatoxin $M_1$ contamination using immunoaffinity columns and high performance liquid chromatography coupled with fluorescent detectors. Confirmation of aflatoxin $M_1$ ($AFM_1$) identified in positive samples was based on the formation of the hemiacetal derivative ($AFM_{2a}$) after derivatization with trifluroacetic acid. The average concentrations of aflatoxin $M_1$ in the raw milks were 25.1 ng/kg, and those values in commercial milks were 29.8 ng/kg. The highest level of aflatoxin $M_1$ in milk was 72.7 ng/kg. These results showed that the contamination of aflatoxin $M_1$ in milks consumed in the Korea was quite low compared to the standard in Korea Food Code (aflatoxin $M_1$ 500 ng/kg).

• Proceedings of the KAIS Fall Conference
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• 2002.11a
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• pp.258-259
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• 2002

본 연구는 304 STS을 전해연마하여 표면의 조도를 나노 단위까지 제어하기 위한 leveller의 개발이 목적이다. 이를 위해서 AFM을 이용하여 조도를 측정하였고 분극실험을 통해 표면특성을 연구하였다. 전해연마는 인산:황산:증류수를 8:1:1 비율로 전해액을 만들었고 부가적으로 첨가제를 넣어 전해연마를 실행했다. 분극실험은 일정한 전극간격을 유지하여 정전압 조건에서 1mV/s의 속도로 주사하여 실험하였다. 전해연마 시간이 증가함에 따라, 첨가제의 양이 적게 들어갈수록 평활도가 향상됨을 볼 수 있었다.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.323-329
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• 2000

In this study we have calculated an ideal complex refractive index of a TiN trim used in a layer of anl1reilecnon (I\R) coatmg, [air$ISiO_2ITiNIglass$] in the visible. Also we simulated the rellectance of lwo-layer AR coating by varying the thicknesses of TiN and $SiO_2$ layers, respecl1vely. The simolation results show that we can controllhe lowest reflectance and AR band of tile AR coating. The TIN fihns were fabricated by a RF magnetron sputtering apparalus. The chemical, structural and electrical properties of TiN fih11S were inveshgated by the Rutherford backscattering spech'oscopy (RBS), atomic force microscope (AFM) and 4-point probe. The optical properlies were inve,tigated by the spectrophotometer and vanable angle spectroscopic ellipsometer (VASE). The smface roughness of TiN flhns \vas $9~10\AA$. TIle resistivity of TiN films was TEX>$360~730\mu$\Omega $ cm. The ,toichlOllletry of TiN film was 1'1: O:N = I: 0.65 :0.95 and ilic oxygen wa~ found on ilie smface. With these experimental and simu]al1on resulLs, we deposited duo: two-layer AR coating, [air$ISiO_2ITiNIglass$] and the refleClance was under 0.5% ill the regIOn of 440-650 run. 0 run.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.350-356
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• 1998

$Y_{3-x}La_xFe_5O_{12}$ (x=0.0, 0.25, 0.5, 0.75, 1.0) powders and thin films were fabricated by a sol-gel method and their magnetic properties and crystal structure were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), vibrating sample magnetometer (VSM), and Mossbauer spectroscopy. XRD and Mossbauer spectroscopy measurements show that garnet powders annealed at 900 $^{\circ}C$ for 8 hours were single-phased and that thin films fired at 800 $^{\circ}C$ for 2 hours were crystallized without any preferred direction. X-ray diffraction patterns of $Y_{3-x}La_xFe_5O_{12}$ powders annealed at 1000 $^{\circ}C$ had only peaks of the garnet structure in case of x$\leq$0.75 but those of $Y_2LaFe_5O_{12}$ powders consisted of peaks from garnets and $LaFeO_3$. Mossbauer sepectra of garnet powders grown by the sol-gel method had a similar shape of those of powders grown by a conventional ceramic method. Grain sizes of garnet powders were 200~300 nm and the averaged surface roughness was 3.17 nm. Results of VSM measurements show the powders and thin films had soft magnetic properties and that the garnet powders had the largest saturation magnetization, 30 emu/g, and the lowest coercivity, 52 Oe.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.55-59
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• 2003

In this study, $Al_xTa_{1-x}$(x=0.0∼1.0) alloy thin films were grown by RF-Magnetron sputtering system, and the structural, mechanical and electrical properties of samples were examined by 4-point probe, XRD, AFM and micro-Vickers hardness profiler. The electrical resistivity was maximum and the crystal quality was optimum for the samples with Al content x=0.245 (Al 24.5 at.%). Regarding the surface hillock formation, the hillock density decreased with an increase of Al content for the low Al content range, and the hillock was eliminated for the sample with Al=24.5 at.%. The hillock density increased with the further increase of Al content. The high values of micro-Vickers hardness were obtained for the samples with x=0.2∼0.45. The results obtained demonstrate that the crystal quality, electrical resistivity, surface morphology and micro-hardness are closely inter-related, and that the optimum physical properties are obtained for the sample with x=0.245.