• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1794-1796
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• 1998

In this study, the $SO_2$ addition effect on NOx removal has been conducted from a combustion flue gases by the do corona discharge-activated radical shower systems. The simulated flue gases were consisted of NO-O_2-$N_2$, NO-$CO_2-N_2-O_2$ and $NO-SO_2-CO_2-Na-O_2$([NO]o:200ppm and $[SO_2]o$:800ppm). The injection gases used as radical source gases were $NH_3$-Ar-air. $SO_2$ and NOx removal efficiency and the other by-products were measured by Fourier Transform Infrared(FTIR) as well as $SO_2$. NOx and $NO_2$ gas detectors. By-product aerosol particles were also observed by Condensation Nucleation Particle Counter(CNPC) and SEM images after sampling. The results showed that asignificant aerosol Particle formation was observed during a removal operation in corona radical shower systems. The NOx removal efficiency significantly increased with increasing applied voltage and $NH_3$ molecule ratio. The $SO_2$ removal efficiency was not significantly effected by applied voltage and slightly increased with increasing $NH_3$ molecule ratio. The NOx removal efficiency for NO-$SO_2-CO_2-N_2-O_2$ was better than that for NO-$CO_2-N_2-O_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.106-109
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1496-1498
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• 2003

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[${\AA}/min$] at the optimum condition. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz].

• Journal of Welding and Joining
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• v.16 no.4
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• pp.39-46
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• 1998

$CO_2$ gas shielded arc welding has been characterized with its harsh arc compared to Ar-based shielding gases and with its high level of spattere specially in welding current range of 250~300 amperes. In this range of welding current, the metal transfer mode showed to be changed from short circuit to globular with the increase of welding voltage resulting in so-called the transitional mode in which both modes of transfer appeared together. To characterize the transitional mode, the short circuit events were divided into two groups, i.e. normal short circuit (N.S.C) which has short circuit time $(t_s)$ over 2msec and instantaneous short circuit (I.S.C) of $t_s$$\leq$2msec. The experimental results showed that the number of N.S.C decreased almost linearly with the increase of welding voltage and appeared to be not related with spatter generation rate. However I.S.C became to be pronounced in the transitional condition and its number reached the maximum value at around 29.0 volts. Considering the relation with the spatter generation rate, it was found that the number of I.S.C had a very strong correlation with the spatter generation rate of the transitional condition. It was further demonstrated that spatter generation rate decreased quite linearly with the decrease of I.S.C frequency. It implies that I.S.C is the most important waveform factor controlling the spatter generation of the transitional mode, i.e. in the middle range of welding current. Based on these results, It was discussed that in the transitional mode the basic concept of waveform control for suppressing spatter generation would be different from the one applied for typical short circuit transfer mode of low welding current.

• Research in Mathematical Education
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• v.4 no.2
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• pp.63-77
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• 2000

The purpose of this article is to devise the activities based on van Hiele levels of geometric thought using computer software, Geometer\\\\`s Sketchpad(GSP) as a tool. The most challenging task facing teachers of geometry is the development of student facility for understanding geometric concepts and properties. The National Council of teachers of Mathematics(Curriculum and Evaluation Standards for School Mathematics, 1991; Principles and Standards for School Mathematics, 2000) and the National Re-search Council(Hill, Griffiths, Bucy, et al., Everybody Counts, 1989) have supported the development of exploring and conjecturing ability for helping students to have mathematical power. The examples of the activities built is GSP for students ar designed to illustrate the ways in which van Hiele\\\\`s model can be implemented into classroom practice.

• Journal of Electrochemical Science and Technology
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• v.3 no.2
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• pp.72-79
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• 2012

$Li_2MnSiO_4$ was synthesized using the solid-state method under an Ar atmosphere at three different calcination temperatures (900, 950, and $1000^{\circ}C$). The optimization of the carbon coating was also carried out using various molar concentrations of adipic acid as the carbon source. The XRD pattern confirmed that the resulting $Li_2MnSiO_4$ particles exhibited an orthorhombic structure with a $Pmn2_1$ space group. Cyclic voltammetry was utilized to investigate the capacitive behavior of $Li_2MnSiO_4$ along with activated carbon (AC) in a hybrid supercapacitor with a two-electrode cell configuration. The $Li_2MnSiO_4$/AC cell exhibited a high discharge capacitance and energy density of $43.2Fg^{-1}$ and $54Whkg^{-1}$, respectively, at $1.0mAcm^{-2}$. The $Li_2MnSiO_4$/AC hybrid supercapacitor exhibited an excellent cycling stability over 1000 measured cycles with coulombic efficiency over > 99 %. Electrochemical impedance spectroscopy was conducted to corroborate the results that were obtained and described.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.994-1000
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• 2014

Synthesis of tetrahydroimidazo[1,2-a]pyridines and tetrahydropyrido[1,2-a] pyrimidines by a one-pot and three component reaction of ${\alpha}$-oxoketenedithioacetals, diamines and DMAD in water has been described. Different routes for accessing the desired compounds were examined and a few specially designed-substrates have been utilized further to afford the new imidazo and pyrido fused [1,8] naphthyridine tetracyclic compound by $S_NAr$ intramolecular cyclization.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.