• Journal of Power System Engineering
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• v.14 no.2
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• pp.71-77
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• 2010

This paper was studied on microstructure, mechanical properties and corrosion characteristics of 316L stainless steel pipe welds was fabricated by orbital welding process. S-Ar specimen was fabricated by using Ar purge gas and S-$N_2$ specimen was fabricated by using $N_2$ purge gas. Ferrite was not detected in weld metal of S-$N_2$ specimen but the order of 0.13 Ferrite number(FN) was detected in weld metal of S-Ar specimen. Oxygen and Nitrogen concentration of S-$N_2$ specimen was higher than S-Ar specimen on HAZ and inner bead. The welds microstructural characteristics of S-Ar and S-$N_2$ specimens are similar. The microvickers hardness values of S-Ar and S-$N_2$ specimens welds were similar and average values of each regions were in the range of 174~194. The microstructures of S-Ar and S-$N_2$ weld metal were full austenite by primary austenite solidification. The Solidification structures of S-Ar and S-$N_2$ weld metal were formed directional dendrite toward bead center. The potentiodynamic polarization curve of STS 316L pipe welds exhibited typical active, passive, transpassive behaviour. Corrosion current density$(I_{corr.})$ and corrosion rate values of S-Ar specimen in 0.1M HCl solution were $0.95{\mu}A/cm^2$ and $0.31{\mu}A$/year respectively. The values of S-$N_2$ specimen were $1.4{\mu}A/cm^2$ and $0.45{\mu}m$/year.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.27 no.2
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• pp.105-116
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• 1997

The purpose of this study is to evaluate the cephalometric reproducibility in digitized cephalometric radiography by comparing the measurement errors between the remeasured and retaken conventional and digitized lateral cephalometric radiography. The mean of the differences and error percentage of each cephalometric measurement were obtained using 96 lateral cephalometric radiography from 48 patients between the age of 11 and 13. The results were as follows; 1. The repeated measurement group of conventional radiography showed least amount of mean differences while those of the retaken measurement group of digitized image showed largest amount of mean differences in every measurement. 2. The measurements which showed statistically significant difference between the conventional radiography and digitized image were S-Go, Ar-Go, S-Ar-Go and S-sN-sNT in repeated measurement group. 3. The measurements which showed statistically significant difference between the repeated and retaken measurement groups were N-S-Ar, MP-Ll and S-sN-sPog in conventional radiography and S-N, Go-Me and N-A in digitized Image. 4. Large amount of error percentage was shown at A-N-B and N-A in retaken measurement group of conventional radiography and N-S-Ba and A-N-B in retaken measurement group of digitized image. 5. The amount of error percentage at Ar-Go and N-S- Ar in retaken measurement group of conventional radiography and S-N, N-A, S-N-B and N-S-Ba in retaken measurement group of digitized image was more than double than those from remeasured groups.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.202-206
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• 2005

Nitriding treatments were conducted on tool steel (SKD 61) at a temperature of $500^{\circ}C$ for 5 hr using high vacuum direct current (DC) plasma, with ammonia and argon as source gases. The structural and compositional changes produced in the nitrided layers by applying different ratios of Ar to $NH_{3}\;(n_{Ar}/n_{NH3}) were investigated using glancing x-ray diffraction (GXRD), optical microscopy, atomic force microscopy (AFM), micro-Vickers hardness testing, and pin-on-disc type tribometer. Nitriding case depths of around of $50{\mu}m$ were produced, varying slightly with different ratios of $n_{Ar}/n_{NH3}. It was found that the specimen surface hardness was 1150 Hv with $n_{Ar}/n_{NH3}=1, increasing to a maximum value of 1500 Hv with $n_{Ar}/n_{NH3}=5. With a further increase in ratio to $n_{Ar}/n_{NH3}=10, the surface hardness of the specimen reduced slightly to a value of 1370 Hv. These phenomena were caused by changes of the crystallographic structure of the nitride layers, i.e the $\gamma'-Fe_{4}N$ phase only was observed in the sample treated with $n_{Ar}/n_{NH3}$=1, and the intensity of the $\gamma'-Fe_{4}N$ phase were reduced but new phase of $\varepsilon'-Fe_{3}N$, which was known as a high hardness, with increasing $n_{Ar}/n_{NH3}. Also, the relative weight loss of counterface of the pin-on-disc with unnitrided steel was 0.2. And that of nitrided steel at a gas mixture ($n_{Ar}/n_{NH3}) of 1, 5, 7, and 10 was 0.4, 0.7, 0.6, and 0.5 mg, respectively. This means that the wear resistance of the nitrided samples could be increased by a factor of 2 at least than that of unnitrided steel.

• Mass Spectrometry Letters
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• v.10 no.1
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• pp.27-31
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• 2019

In this article, the properties of ${CO_2}^+(CO_2)_n$ clusters in a Paul ion trap have been investigated using mass-selective instability mode which conducted by chosen precursor ions, mainly $Ar^+$ and ${CO_2}^+$ produced by a mixture of Ar and $CO_2$. Exposure of ${CO_2}^+$ ions to $CO_2$ molecules, lead to the formation of ${CO_2}^+(CO_2)_n$ clusters. Here, Ar gas react as a buffer gas and lead to form ${CO_2}^+(CO_2)_n$ cluster by collisional effect.

• Journal of the Korean Chemical Society
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• v.21 no.6
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• pp.395-403
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• 1977

Significant structure theory was applied to some liquid mixture systems ranging from simple monatomic molecule systems to polyatomic molecule systems, and the activity coefficients ${\gamma}$ of the liquid mixture systems were calculated over whole mole fractions using the following thermodynamic relation $RTln_{{\gamma}i} = (\frac{{\partial A}^E}{{\partial N}_i})_{T,V,N_i} $ where $A^E$ represents the excess Helmholtz free energy, and $N_i$ is the number of molecules of component i. The activity coefficients of the solutions such as monatomic molecule systems (Ar-Kr, Kr-Xe) and diatomic molecule systems $(Ar-O_2,\;N_2-CO)$ and $CH_4-Kr$ systems whose components have similar shapes for intermolecular potential curves were calculated successfully only with the ${\delta}E_s$, correction parameter for energy $E_s$, for mixture systems. For other systems such as $Ar-N_2,\;O_2-N_2\;and\;CH_4-C_3H_8$ whose components have dissimilar intermolecular potential curve shapes an additional correction parameters ${\delta}$V and even one more parameter ${\delta}$n were necessary [see Eqs.(10)∼(12)].

• Journal of Radiation Protection and Research
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• v.13 no.2
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• pp.1-8
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• 1988

The energy losses of ${\alpha}$-particle with 3 to 5.4 MeV energy were measured as a function of gas absorber thickness and ${\alpha}$-particle energy in three light gaseous media; He, Ar, and $N_2$. The stopping powers and stopping cross-sections were determined by analyzing these data. For Ar gas, the experimental values are very well consistent with the corresponding values of Srivastava's stopping-power theory with the condition of the completely and partially stripped ion. For $N_2$ and He gases, these experimental values express the inconsistencies of about $13{\sim}36%$ and $27{\sim}28%$, respectively.

• Journal of the korean academy of Pediatric Dentistry
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• v.34 no.4
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• pp.551-559
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• 2007

This study was to investigate if cervical vertebrae maturation stages are as useful as hand-wrist maturation stages in evaluating the mandibular growth. The subject consisted of 292 girls aged from 8 to 16 years with normal occlusion. They were classified according to diagnosis by using studycast, lateral cephalogram, and handwrist X-ray film. The results were as follow: 1. Cervical vertebrae and hand-wrist maturation stages increased with age. 2. All mandibular measurements (Ar-Go, Go-Me, N-Go, S-Gn, N-Me) increased linearly with cervical vertebrae maturation stages. 3. Ar-Go, Go-Me, N-Go, S-Gn increased linearly with hand-wrist maturation stages. 4. Ar-Go, Go-Me, N-Go, S-Gn increased relatively rapidly between cervical vertebrae maturation stages 3 and 4. Go-Me and S-Gn increased relatively rapidly between hand-wrist maturation stages 6 and 7. 5. Ar-Go, Go-Me, N-Go, S-Gn, N-Me had high correlations with cervical vertebrae maturation stages as well as hand-wrist maturation stages. These results suggest that cervical vertebrae maturation stages are reliable on evaluating the mandibular growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.468-470
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• 1999

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.604-608
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• 1997

Reactions of arenealdehyde 2-pyridylhydrazones (1) with thianthrene cation radical ($Th^{+·}$) and tris(2,4-dibromophenyl)aminium hexachloroantimonate ($Ar_3N^{+·}SbCl_6^-$) were investigated. The major product was switched depending on the cation radical being used. That is, s-triazolo[4,3-α]pyridines (2), an intramolecular cyclization product, and 1-(2-pyridyl)-1,2,4-triazoles (3), an intermolecular cycloaddition product, were obtained as a major product when reacted with $Th^{+·}$ and $Ar_3N^{+·}$, respectively in nitrile solvents. The plausible mechanisms are proposed based on both the reduction potentials of $Th^{+·}$ and $Ar_3N^{+·}$ and control experiments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.283-287
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• 2002

We have studied Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate for application of interconnection metal in ULSI circuits. Zr(Si)N film was deposited with reactive DC magnetron sputtering system using $Ar/N_2$mixed gas. The value of the resistivity was the lowest for the ZrN film using 29 : 1 of Ar : $N_2$reactant gas ratio at room temperature and decreased with increasing of Si substrate temperature. As the value of ZrN film resistivity was decreased, the direction of crystal growth was toward to (002) plane. The barrier property of ZrN film added with Si was improved. But Si was added too much in ZrN film, the barrier property was degraded. The adhesive property was improved with increasing of Si in ZrN. For the analysis of the film, XRD, Optical microscopy, Scretch tester, so on were used.