• 한국세라믹학회지
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• 제28권11호
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• pp.897-907
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• 1991

This study was conducted to research the formation and the color development of CoO-ZnO-Fe2O3-TiO2-SnO2 system for the purpose of synthesizing the spinel pigments which are stable at high temperature. After preparing CoO-ZnO-Fe2O3, in which CoO causes the color, as a basic composition, $\chi$CoO.(1-$\chi$)ZnO.Fe2O3 system, $\chi$CoO.(1-$\chi$)ZnO.TiO2 system and $\chi$CoO.(1-$\chi$)ZnO.SnO2 system were prepared with $\chi$=0, 0.2, 0.5, 0.7, 1.0 mole ratio respectively. The manufacturing was carried out at 128$0^{\circ}C$ for 90 minutes. These specimens were analyzed by the reflectance measurement and the X-ray diffraction analysis and the results were summarized as follows: 1. All of the specimens formed the spinel structure and were colored with stable yellow or blue. 2. As the content of CoO and Fe2O3 in the specimens being increased, the reflectance of each specimen was measured becoming lower and the colors were changed from yellow to greyish blue and from blue to dark blue. 3. As the substituting amount of Co2+ ion for Zn2+ ion in $\chi$CoO-ZnO-TiO2-SnO2 system being increased, the colors were changed from blue to greyish blue. The colors were changed from yellow to grayish green owing to the tetrahedral Co2+ ions being increased, the octahedral Co2+ ions being decreased with increasing the amount of Sn4+ ions. 4. CoO-ZnO-Fe2O3-TiO2-SnO2 system, in which Zn2+ was substituted with Co2+ and Fe3+ was substituted with Ti4+ and Sn4+, easily formed the spinel structure without regard to the amount of substitution or the ion owing to the selectivity of the coordination number: 4 of Zn2+, 4 of Co2+, 6 of Fe3+ or 6 of Ti4+ and Sn4+.

• 한국재료학회지
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• 제13권8호
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• pp.519-523
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• 2003

We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.

• 한국세라믹학회지
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• 제28권2호
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• pp.160-166
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• 1991

Microstructure and phase changes during the sintering of ZnO varistors were studied in ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems using acanning electron microscopy (SEM) with an energy dispersive X-ray analysis (EDAX), X-ray diffraction (XRD) and differential thermal analysis (DTA). The spinel phase and the Bi2O3 phase were formed by the decomposition of the pyrochlore phase during heating. The spinel particles (2-4$\mu\textrm{m}$), which were formed both along ther grain boundaries and within the ZnO grain, were always found near the pyrochlore phase. Intergranular phases (Bi2O3 and pyrochlore) were precipitated from the liquid phase during cooling. The Bi2O3 phases were located at the triple (or multiple) point of the ZnO grains. Cr2O3 played a role in decreasing the formation temperature of the spinel phase and Bi2O3 phase during sintering, and inhibited the grain growth.

• 한국결정학회지
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• 제8권2호
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• pp.149-153
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• 1997

본 연구는 ZnO-Bi2O3-Co3O4-MnCo3-Cr2O3-Sb2O3를 기본 조성으로 하여 Sb2O3 첨가량(0-0.09mol%) 변화에 따른 grain size와 미세구조 특성을 고찰하고자 하였다. Sb2O3가 첨가되지 않은 조성은 이상 입자 성장에 의해 거대한 ZnO grain이 생성되었으며, Sb2O3를 첨가한 조성은 Zn7Sb2O12 spinel상 생성으로 입자 성장이 억제되어 이상입자 성장이 관찰되지 않았다. Sb2O3 첨가량 증가에 따라 ZnO grain size가 현격하게 감소하였으며 그 미세구조는 조밀하고 균일한 크기의 grain분포를 나타내었다.

• Bulletin of the Korean Chemical Society
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• 제24권1호
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• pp.86-90
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• 2003

Reverse-Water-Gas-Shift reaction (RWGSR) was carried out over the ZnO, $Al_2O_3,\;and\;ZnO/Al_2O_3$ catalysts at the temperature range from 400 to 700 ℃. The ZnO showed good specific reaction activity but this catalyst was deactivated. All the catalysts except the $ZnO/Al_2O_3$ catalyst (850 ℃) showed low stability for the RWGSR and was deactivated at the reaction temperature of 600 ℃. The $ZnO/Al_2O_3$ catalyst calcined at 850 ℃ was stable during 210 hrs under the reaction conditions of 600 ℃ and 150,000 GHSV, showing CO selectivity of 100% even at the pressure of 5 atm. The high stability of the $ZnO/Al_2O_3$ catalyst (850 ℃) was attributed to the prevention of ZnO reduction by the formation of $ZnAl_2O_4$ spinel structure. The spinel structure of $ZnAl_2O_4$ phase in the $ZnO/Al_2O_3$ catalyst calcined at 850 ℃ was confirmed by XRD and electron diffraction.

• 대한화학회지
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• 제54권2호
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• pp.192-197
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• 2010

형광체나 반도체의 소자로 사용되는 전이금속화합물 중에서 나노(nano) 크기를 가지는 스피넬 화합물을 합성하였다. 스피넬 화합물의 크기, 합성여부, 열적분석과 화합물의 특성을 확인하기 위하여 열 중량 분석기(TGA), X-선 회절 분석기(XRD), 적외선 흡수 분광기(IR)를 사용하였다. Scherrer식을 이용하여 화합물의 평균 입자 크기가 13~16 nm임을 예측할 수 있었다. 본 논문에 사용된 실험방법은 졸-겔(sol-gel)법을 사용하였으며, 소성 온도는 낮은 온도에서 진행 되었다($350^{\circ}C$). Kinetic 함수인 활성화 에너지와 전환인자를 계산하기 위해서 Kissinger방법과 Arrhenius식을 이용하여 계산하였다. $ZnCo_2O_4$와 $NiCo_2O_4$의 활성화 에너지는 163.42 kJ/mol와 147.01 kJ/mol 값을 가지는 있음을 확인하였다. 그리고 spinel 화합물들의 열역학적 함수(${\Delta}G^{\varphi}$, ${\Delta}H^{\varphi}$, ${\Delta}S^{\varphi}$)를 결정하였다.

• 한국자기학회지
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• 제23권2호
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• pp.43-48
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• 2013

Chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$(M=Co, Ni, Zn)에 대하여 X-선 회절법, 자기저항측정, Mossbauer 분광법을 이용하여 CMR특성과 자기적 성질을 연구하였다. 10 at%의 M 치환에서는 상온에서 입방정으로 정상 spinel 구조를 갖는 것으로 나타났다. 자기저항 실험결과 $T_C$ 부근에서는 도체-반도체 전이의 특성을 보이며 최대자기저항 온도가 나타났다. M$\ddot{o}$ssbauer 분광 실험 결과에서 Fe에 대한 Ni 치환은 초교환 상호작용을 강화시키고 Jahn-Teller 효과에 의한 완화 현상의 심화를 보여준다. CMR 특성은 망간산화물의 $Mn^{3+}$와 $Mn^{4+}$ 사이의 이중교환상호작용과 다르게 동적 Jahn-Teller 효과와 관계된 polaron에 기인한 도체-반도체 전이 의한 것으로 해석된다.

• 한국세라믹학회지
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• 제31권1호
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• pp.62-68
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• 1994

It is compared the structures of the S-block in the Ba-Co-Zn Y-type hexagonal ferrites (Ba2Co2-xZnxFe12O22, x=0~2) and the Co-Zn spinel ferrites (Co1-xZnxFe2O4, x=0~1) expressed by a hexagonal axis system (space group R3m). The structures have been refined with a Rietveld analysis of the powder X-ray diffraction pattern with high precision (Rwp<0.13, RI<0.03). The overal dimension of the S-block is slightly different from the 1/3 of a hexagonal spinel unit cell as follow: 1.6~2.0% longer c-axis, 1.3~1.6% shorter a-axis and about 1% smaller volume. Upto Zn:Co=1:1 in the Ba-Co-Zn Y-type hexagonal ferrites, the zinc substitute primarily the tetrahedral sites in the S-block. Beyond that the zinc seems to go into the T-block as well.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.105-105
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.87-87
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• 2011

Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.