• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.45-50
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• 2002

Effect of sintering additives on the densification behavior of reaction-bonded silicon nitride prepared by using coarse Si powders is discussed. Sintering additives such as 6 wt% $Y_2O_3$+1wt% $A1_2O_3$ (6YlA) did not give rise to full densification, while full densification was obtained by using the sintering additives such as 6wt% $Y_2O_3$+3 wt% $A1_2O_3$+ 2wt% $SiO_2$ (6Y3A2S) and 9wt% $Y_2O_3$+ 1.5wt% $A1_2O_3$+ 3wt% $SiO_2$ (9Yl.5A3S). In the case of 6Y3A2S addition, high fracture strength of 960 MPa and the fracture toughness of $6.5 MPa.m^{1/2}$ were obtained.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.67-72
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• 2004

The glass-forming conditions are investigated in the $K_2$O-CaO-$SiO_2$ $-P_2$$O_{5}$ system with 10~65 mole% of$ P_2$$O_{5}$. Thermal properties and dissolution properties were investigated according to variation of the SiO and KO contents in selected compositions. The glass formation condition was determined when $K_2$O/$P_2$$O_{5}$ mole ratio 0~0.24, $SiO_2$/($SiO_2$+$P_2$$O_{5}$ ) mole ratio 0～0.29, and CaO/$P_2$$O_{5}$ mole ratio 0~1.00. In the result of the thermal properties, the glass transition temperature($T_{g}$) and softening temperature($T_{s}$ ) were gradually shifted to the lower temperature range with increase of $K_2$O contents. The maximum value of the chemical durability was shown in $K_2$$PO_2$$O_{5}$ mole ratio 0.17 when the $SiO_2$ contents were changed, and $K_2$O was fixed at 10 mole%. Hence the change of the $K_2$O/$P_2$$O_{5}$ mole ratio was found that a new main factor of the chemical durability.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.233-237
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• 2015

In order to investigate the potassium (K) gettering, Al-1%Si/$SiO_2$/PSG multilevel thin films were fabricated. Al-1%Si thin films and $SiO_2$/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the $SiO_2$/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the $SiO_2$/PSG passivation layers, and especially the interface gettering at the $SiO_2$/PSG and at the Al-1%Si/$SiO_2$ interfaces was observed. Potassium gettering in Al-1%Si/$SiO_2$/PSG multilevel thin films is considered to be caused by a segregation type of gettering.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.709-715
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• 1996

The influence of an electric field on the combustion synthesis of ${Ti}_{5}{Si}_{3}$-x ${ZrO}_{2)$(0 $\leq$ x $\leq$0.6)was investigated. Composite of X $\geq$0.45 can only be synthesized in the presence of an electric field. Although in the absence of an electri field the system with x = 0.45 and x=0.6 can sustain a nonsteady combustion wave, the reaction is not complete. That is, an unstable wave propagates to the middle of the sample and them becomes extinguished. Wave velocity o the ${Ti}_{5}{Si}_{3}-{ZrO}_{2}$ Composites slightly increases with the imposition of external field across the sample.

• Korean Chemical Engineering Research
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• v.57 no.5
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• pp.714-722
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• 2019

Catalysts were prepared by using incipient wetness impregnation method with 17 wt% Ni on a support ($SiO_2-Y_2O_3$, $Al_2O_3$, $SiO_2-ZrO_2$, $SiO_2$, $TiO_2$, MgO) and the catalytic activity in the reductive amination of ethanol with ammonia in the presence of hydrogen was compared and evaluated. The catalysts used before and after the reaction were characterized using X-ray diffraction, nitrogen adsorption, ethanol-temperature programmed desorption (EtOH-TPD), isopropanol-temperature programmed desorption (IPA-TPD), and hydrogen chemisorption etc. In the case of preparing $ZrO_2$ and $Y_2O_3$ supports, the small amount of Si dissolution from the Pyrex reactor surface provoked the formation of mixed oxides $SiO_2-ZrO_2$ and $SiO_2-Y_2O_3$. Among the catalysts used, $Ni/SiO_2-Y_2O_3$ catalyst showed the best activity, and this good activity was closely related to the highest nickel dispersion, and low desorption temperature in EtOH-TPD and IPA-TPD. The low catalytic activity on Ni/MgO catalysts showed low activity due to the formation of NiO-MgO solid-solutions. In the case of $Ni/TiO_2$, the reactivity was low due to the low nickel metal phase due to strong metal-support interaction. In the case of using a support as $SiO_2-Y_2O_3$, $Al_2O_3$, $SiO_2-ZrO_2$, and $SiO_2$, the selectivities of ethylamines and acetonitrile were not significantly different at similar ethanol conversion.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.12
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• pp.573-577
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• 2005

[$TiO_2$] sol and $SiO_2$ sol were prepared using sol-gel method. As $H_{2}O$/Alkoxide ratios increased, sol had cluster structure and as $H_{2}O$/Alkoxide ratios decreased, sol had linear structure. Gelation time of $TiO_2$ sol was faster than that of $SiO_2$ sol according to the time. In comparison with initial viscosity between $TiO_2$ sol and $SiO_2$ sol, $TiO_2$ sol was highest at $H_{2}O/Ti(OC_{3}H_{7})_{4}=5$, $SiO_2$ sol was almost constant according to $H_{2}O/Si(OC_{2}H_{5})_{4}$ ratios.

• Journal of the Korean Society of Safety
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• v.20 no.4 s.72
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• pp.29-33
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• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.47-54
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• 1986

The structures of crystalline vitreous and liquid $SiO_2$ were Monte carlo simulated employing the potential energy function comprising Lennard-Jones 2-body and Axilrod-Teller 3-body potentials. Although the Si-O-Si angular distribution functions obtained in the simulation appear to be higher than the experimental results the other simulation results including SiO, O-O and Si-Si radial distribution functions and O-Si-O anglular distribution functions agree well with experimental data within acceptable limits. Themost important outcome in this study is that various $SiO_2$forms were successfully reproduced with the same potential energy function.