• 한국결정성장학회지
• /
• 제5권3호
• /
• pp.291-298
• /
• 1995

알루미나 고상소결체와 $CaMgSiO_4$간의 반응에 따른 반응상들의 성장 및 용해 거동을 $1600^{\circ}C$에서 열처리 시간을 변화하여 고찰하였다. 열처리시 알루미나는 $CaMgSiO_4$ 액상에 용융되어 중간에 반응상인 $CaO{\cdot}6Al_2O_3$와 최종 반응상인 $CaMgSiO_4$ 스피넬 형성이 관찰되었다. 중간상인$CaO{\cdot}6Al_2O_3$ 결정은 성장 모양과 용해 모양이 뚜렷하게 구분되었다.

• 한국전기전자재료학회논문지
• /
• 제28권5호
• /
• pp.295-299
• /
• 2015

In this paper to improve the ionic conduction properties, lanthanum silicate apatite $La_{9.33}(SiO_4)_6O_2$ ceramic, which substituted by V ions at Si-site, were fabricated by the mixed-oxide method. And we investigated the structural and electrical properties of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens with variation of dopants for the application of solid oxide fuel cells. The sintering temperature of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens decreased from $1,600^{\circ}C$ to $1,400^{\circ}C$. As results of X-ray diffraction patterns, all $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens showed the formation of a complete solid solution in a apatite polycrystallin structure. But the specimens doped with more than 1.5mol% showed the second phase, $La_2SiO_5$ and $SiO_2$. The specimen dopants with 1.0 mol% showed the maximum ion conductivity. Ion conducting and activation energy of the $La_{9.33}(Si_5V_1)O_26$ specimens were about $7.8{\times}10^{-4}S/cm$ 1.62 eV at $600^{\circ}C$, respectively.

• 한국세라믹학회지
• /
• 제31권10호
• /
• pp.1169-1175
• /
• 1994

Five Al2O3/SiC/metal composites with four different particle sizes of green SiC abrasive grains are grown by the directed oxidation of an commercially available Al-alloy. Oxidation was conducted in air at 100$0^{\circ}C$, 96 hours long. Slip casted SiC-fillers were placed on the alloy or SiC powder deposited up to the required layer thickness. Their microstructures are described and measurements of density, elastic constants, frexural strength, fracture toughness and work of fracture are reported. The results are compared with those of commercial dense sintered Al2O3. The properties of produced materials have a strong relationship to not only the properties of Al2O3, SiC, Al and Si but also to the phase share and phase distribution. The composite materials are dense (0.5% porosity), tough (KIC = 3.4~6.4 MPa{{{{ SQRT { m} }}), strong ({{{{ sigma }}B = 170~345 MPa) and reasonably shrinkage free producible. The reinforcements is attained mainly through the plastic deformation of ductile metal phase.

• 한국재료학회지
• /
• 제10권4호
• /
• pp.270-275
• /
• 2000

Metal/ferroelectric/insulator/semiconductor(MFIS)-Field Effect Transistor을 위한 Pt/YMnO$_3$/Y$_2$O$_3$/Si 구조를 제조하여 MFIS 구조의 특성에 미치는 $Y_2$O$_3$박막의 영향을 고찰하였다. PLD법을 이용하여 p=type Si(111) 기판 위에 증착시킨 $Y_2$O$_3$박막은 증착온도와 관계없이 (111)방향으로의 우선배향성을 갖고 결정화 되었다. 실리콘 위에 바로 MOCVD법에 의해 강유전체 YMnO$_3$박막을 증착시킨 경우 실리콘과의 계면에서 Mn이 부족한 층이 형성되지만 $Y_2$O$_3$가 실리콘과 YMnO$_3$사이에 삽입된 경우는 $Y_2$O$_3$바로 위에서부터 화학양론비에 일치하는 양질의 YMnO$_3$박막을 얻을 수 있었다. 85$0^{\circ}C$, 100mtorr의 진공분위기에서 열처리한 YMnO$_3$박막은 $Y_2$O$_3$가 삽입된 경우 memory window 값이 $Y_2$O$_3$가 삽입되지 않은 경우보다 더 큰 값을 보였으며 5V에서 1.3V의 값을 보였다.

• 전기전자학회논문지
• /
• 제17권2호
• /
• pp.182-188
• /
• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• 한국세라믹학회지
• /
• 제41권1호
• /
• pp.24-29
• /
• 2004

Te(Tellurium) 미립자를 $SiO_2$ 박막에 분산시켜 비선형 광학재료, 선택흡수막 및 투과막 등 새로운 기능성 재료로 활용하기 위하여 Te/$SiO_2$ 나노 목합체 박막을 제조하였다. 가수분해 조건을 변화시켰을 때 박막표면에 분산시킨 입자의 크기와 형상이 재료의 물성에 미치는 영향을 열처리 후의 시차중량분석과 엑스선 회절분석, 분광분석, 원자력간 현미경 그리고 전자현미경 관찰 등을 통하여 조사하였다. 제조된 박막의 광흡수 스펙트럼에스 Te 미립자의 플라즈마 공명에 의한 550nm 부근의 흡수피크가 관찰되어 비선형 광학성을 확인할 수 있었다. 박막의 표면 거칠기는 약 2.5nm 내외였고, Te 미립자의 크기는 약 5~10nm였다.

• 한국광물학회지
• /
• 제19권4호
• /
• pp.347-353
• /
• 2006

자연계에 존재하는 다양한 지구물질의 조성은 여러 성분들로 구성된 다성분계이므로 자연계의 현상을 이해하기 위해서는 이러한 다성분계 지구물질의 구조를 규명하는 것이 필수적이다. 이러한 중요성에도 불구하고 다성분계 비정질의 자세한 원자-나노 구조는 비정질 자체가 갖고 있는 여러 가지고유의 무질서도 등으로 인하여 최근까지도 정확히 알려지지 않았다. 본 연구에서는 일차원 O-17 MAS와 이차원 3QMAS NMR을 이용하여, 다성분계 비정질인 Ca-Na 알루미노규산염 $[(CaO)_x(Na_2O)_{1-x}]\;(A1_2O_3)_{0.5}(SiO_2)_6.\;CNAS)$의 자세한 원자단위의 조성에 따른 변화를 보고한다. 비정질 CNAS의 비연결 산소 (non-bridging oxygen, NBO) 중 Ca-NBO는 Na/Ca 비율이 증가함에 따라서 (Ca, Na)-NBO를 형성한다. 이는 비정질 CNAS 내에서 비연결산소와 Ca와 Na 간에 강한 상호작용이 있음을 지시한다. 연결산소인 경우(bridging oxygen, BO, Si-O-Si나 Si-O-Al)의 경우에도 Na/Ca 비율에 따라, 감소의 폭이 비연결 산소보다는 상대적으로 작지만 화학차폐(NMR chemical shift)가 선형적으로 감소한다. 비정질 규산염의 연결산소의 결합각과 결합길이의 분포에 의해 결정되는 위상무질서도(topological disorder)는 Ca 함량이 증가할수록 비선형적으로 증가한다. 이러한 결과들은 비정질 CNAS의 구조가 기존에 알려진 데로 비연결산소만이 Na와 Ca 같은 구조교란양이온(network modifying cation)에 의해 많은 영향을 받는 것이 아니라 연결산소도 이들 양이온에 의하여 영향을 받음을 지시한다 이에 따라 다양한 양이온세기가 비정질의 무질서도에 미치는 영향을 정리하였다.

• 한국세라믹학회지
• /
• 제31권7호
• /
• pp.695-702
• /
• 1994

Current study was undertaken to explain the structural evolution and corresponding changes in the properties of calcium aluminate glasses with the variation of SiO2 doping concentration. Calcium aluminate glasses in the compositional ranges of (100-x)(0.6CaO+0.4Al2O3)+xSiO2(where x=0~60) were fabricated. DTA analysis confirmed an anomalous behavior in glass transition temperature (Tg) with the maximum of 887$^{\circ}C$ and minimum of 859$^{\circ}C$ when x=5 and 50, respectively. densities and refractive indices monotonically decreased with increasing SiO2 content and IR transmitting cutoff shifted to shorter wavelength side when the amount of added SiO2 exceeded 5 mole%. IR fundamental vibration absorption peaks showed the change that NBOs were inclined to SiO4 tetrahedron in the low-silica region and NBO per SiO4 tetrahedra changed from 2 to 0 with increasing silica content. Based on the analysis of IR fundamental vibration absorption peaks, the model of the structural change can be proposed in three step: 1) SiO4 scavenged the NBOs located at AlO4-tetrahedra, which resulted in the increased of Tg values, 2) NBOs located in the main network again with a decrease in Tg, and 3) dominated by the decrease in the relative amount of NBOs in the glass system, where Tg re-increased.

• 한국세라믹학회지
• /
• 제37권1호
• /
• pp.50-56
• /
• 2000

Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

• 한국세라믹학회지
• /
• 제50권6호
• /
• pp.364-371
• /
• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.