• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.233-243
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• 2009

We have investigated the infrared spectra for CO adsorbed on silica supported nickel(Ni-Si$O_2$), silica supported copper(Cu-Si$O_2$), silica supported nickel-copper alloys(Ni/Cu-Si$O_2$) of several compositions with varying CO pressures(0.2 $torr{\sim}$50 torr) at room temperature and on pumping to vacumn at room temperature within the frequency range of 1500 $cm^{-1}{\sim}2500\;cm^{-1}$. Four bands(2059.6 $cm^{-1},\;{\sim}$2036.5 $cm^{-1},\;{\sim}$ 1868.7 $cm^{-1},\;{\sim}$ 1697.1 $cm^{-1}$) were observed for Ni-Si$O_2$, two bands($\sim$2115.5 $cm^{-1},\;{\sim}$1743.0 $cm^{-1}$) were observed for Cu-Si$O_2$ and five bands(${\sim}2123.2\;cm^{-1}$, 2059.6 $cm^{-1},\;{\sim}$2036.4 $cm^{-1},\;{\sim}$1899.5 $cm^{-1},\;{\sim}$1697.1 $cm^{-1}$) were observed for Ni/Cu-Si$O_2$. These absorption bands correspond with those of the previous reports approximately. The bands below 1800 $cm^{-1}$ were only observed with Ni metal or Ni/Cu alloy crystal plane containing step at room temperature and the ${\sim}1697.1\;cm^{-1}$ bands observed with Ni-Si$O_2$ and Ni/Cu-Si$O_2$ may be ascribed to CO molecule adsorbed on the adsorption sites near step. The bands below 2000 $cm^{-1}$ were rarely observed with Cu metal crystal plane at room temperature and the 1743.0 $cm^{-1}$ bands may be ascribed to CO molecule adsorbed on the adsorption sites near step. The band shifts of adsorbed CO with varing Cu contents from 0 to 0.5 mole fraction at the same CO pressure or at the same pumping time to vacumn were below 21 $cm^{-1}$. and comparatively small than those with other ⅠB metal addition. It may means ligand effect of Cu d electron is small.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.69-77
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• 2001

Wear and Friction characteristics of plasma-sprayed Cr$_2$O$_3$ coating and Cr$_2$O$_3$ coating included SiO$_2$ and TiO$_2$ against SiC ball have been investigated under different loads. Worn surfaces were observed by SEM and worn surfaces were analyzed by EDS. The Friction coefficient and the Wear resistance of Cr$_2$O$_3$-5SiO$_2$-3TiO$_2$coating was less than that of Cr$_2$O$_3$ coating. The main mechanisms were plastic deformation and brittle fracture. The film on surface were made by plastic deformation and compacted wear debris. This film protect wear of coating

• Solar Energy
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• v.6 no.2
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• pp.70-75
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• 1986

The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.118-123
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• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• Journal of the Korean Ceramic Society
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• v.18 no.3
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• pp.163-170
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• 1981

The crystallization of $Li_2O-SiO_2$ system glasses and the effect of phase separtion to crystal nucleation were studied. The crystallization temperatures of various glasses were determined by DTA and glasses were nucleation heat treated at the temperatures ranging from 45$0^{\circ}C$ to 5$25^{\circ}C$. These glasses were thengown at $700^{\circ}C$ to observable size in the optical microscope. Crystal nucleation rates of various glasses were obtained by estimating the number of crystals per unit volume. The main crystal phase of these glasses identified by X-ray diffraction was lithium disilicate ($Li_2O$.$2SiO_2$). It was found that the crystal nucleation rate of glass (19.5% $Li_2P$-80.5% $SiO_2$), the nearest composition to lithium disilicate, was higher than other glasses. The opalescence caused by phase separation was observed in the nucleation heat treated glass (16.3% $Li_2O$-83.7% $SiO_2$). The result from nucleation density measurement of this glass indicated that the nucleation was enhanced during early stage of phase separation. The molphologies of crystals in glasses and crystal growth rate at $600^{\circ}C$ were also discussed.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.166-171
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• 1997

The photomachinable glass-ceramics of Ag and CeO$_{2}$ added to Li$_{2}$O-Al$_{2}$O$_{3}$-SiO$_{2}$-K$_{2}$O glass system was investigated as a function of UV irradiation time. The temperature of optimum nucleation and crystal growth temperature were confirmed at 525.deg. C, 630.deg. C respectively using DTA and TMA. The phases of Li$_{2}$O.SiO$_{2}$ habit were lath-like and/or dendrite type and [002] direction of Li$_{2}$O.SiO$_{2}$ / Li$_{2}$O.2SiO$_{2}$ phases were changed according to the UV irradiation time by 400 W, 362 nm UV light source. Under that condition, the optimum UV irradiation time was 5 min.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.258-263
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• 2000

Effect of microwave heat-treatment processing on the electrical conductivity and crystallization behavior for the $Li_2O-2SiO_2$-xCuO glasses with various CuO contents was compared with that of conventional heat-treatment processing. The electrical conductivities of samples heat-treated at $500^{\circ}C$ by different heat-treatment processing were increased with increasing CuO content and higher electrical conductivities were obtained from microwave heat-treated samples. From the result of XRD analyses, microwave heat-treatment processing enhanced the degree of crystallization in the formation of $Li_2Si_2O_5, Li_2Cu_5$($Si_2O_7)_2$, and $Li_2Cu_2O_3$ crystalline phases. The electrical conductivities of $Li_2O-2SiO_2$-1.3CuO (30 mol% CuO) glass heat-treated at $500^{\circ}C$ for 30 min under conventional and microwave heat-treatment processing were $0.11{\times}10^{-4}(\Omega \textrm {cm})^{-1}$ and $0.68{\times}10^{-4}(\Omega \textrm {cm})^{-1}$ at room temperature, respectively. It was speculated that microwave energy enhanced the degree of crystallization and increased electrical conductivity in the samples.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1178-1186
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• 2000

타일의 내마모성과 내산성을 향상시키기 위해 결정화유리가 최근에 새로운 유약 재료로서 소개되고 있다. 신 유약의 연구에 사용된 조성은 $Ca_2$ZrSi$_4$O$_{12}$ 상에 근접하는 CaO-ZrO$_2$-SiO$_2$계의 유리조성의 분말로, 마이크로파 가열 (2.45 GHz)에 의해서 900-120$0^{\circ}C$의 0-20분간 소성되어 평가되었다. 그 결과, 100$0^{\circ}C$ 이상에서 소성한 시편은 내부 결정화를 나타내었으며, 결정상은 미세(5$mu extrm{m}$)한 크기를 갖는 $Ca_2$ZrSi$_4$O$_{12}$가 주 결정상이며, $Ca_2$ZrSi$_4$O$_{12}$, CaSiO$_3$, SiO$_2$의 세 상이 나타났다. 소결체의 미세구조는 사용한 유리분말의 입도의 영향을 받았다. 미세분말 (<38$\mu\textrm{m}$)을 이용한 소결체의 조직이 조세분말 (45-150$\mu\textrm{m}$)의 경우보다 수축율면에서 높았으며 낮은 기공도를 갖는 미세구조를 가졌다. 마이크로파에 의한 유리분말의 소성은 1000-120$0^{\circ}C$ 구간에서 10분 이내 결정화가 완료되는 급속 가열 공정이었으며 CaO-ZrO$_2$-SiO$_2$계 결정화 유리 제조에 균일한 체적가열을 할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.233-239
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• 2002

Reflection properties of $SiO_2$/ITO (Indium Tin Oxide) thin films coated for electromagnetic shielding, anti-static and anti-reflection on the front surface in CRT were studied. The behavior of reflectance as a function of thickness of $SiO_2$/ITO was investigated and applied to theoretical anti0reflection model of double layers and three layers. As the thickness of ITO layer increased, the deviation from theoretical value increased because uniformity of film deteriorated by pore. Because of the effect of mixed layer of $SiO_2$ and ITO, experimental reflectance showed better acceptance to the three layer antireflection model of $SiO_2$/$SiO_2$+ITO/ITO than the two layer model. Based on the theoretical antireflection design, the double layer whose thickness of $SiO_2$ and ITO were 90, 65 nm, respectively appear 2.5% in reflectance at standard wavelength, 550 nm. This phenomenon was similar to theoretical reflectance in visual range.

• Journal of the Korean Electrochemical Society
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• v.17 no.2
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• pp.86-93
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• 2014

Mesoporous tin oxide (meso-$SnO_2$) with 5 nm mesopore and well-aligned $SnO_2$ nanowire-bundles with 5~7 nm diameters were prepared by template synthesis method. In addition to meso-$SnO_2$, meso-$SnO_2$/$SiO_2$, which has almost the same structure as meso-$SnO_2$ including $SiO_2$ used as the template were prepared by the modification of template synthesis. X-ray diffraction, N2 adsorption-desorption isotherms, transmission electron microscopy observed structures of meso-$SnO_2$ and meso-$SnO_2$/$SiO_2$. Although the meso-$SnO_2$/$SiO_2$ showed some positive evidences to suppress the volume change of meso-$SnO_2$ through cyclic voltammogram, electrochemical impedance spectroscopy, and voltage profiles during cycling, its cycle life was not improved highly to address modified structural effects. Thus, further study might be done to control the nanostructure of meso-$SnO_2$/$SiO_2$ for enhanced cycle performance.