• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.878-885
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• 2012

In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

• 한국세라믹학회지
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• 제23권6호
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• pp.37-44
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• 1986

Yttria-antimonia-stabilized zirconia was investigated with respect to the amount of $Sb_2O_3$ addition in the range of 0.5~5mole% to the base composition of $(ZrO)_{0.92}(Y_2O_3)_{0.08}$ The sinterbility modulus of rupture Vickers hardness evaporation of components phase form-tion and mcicrostructure were evaluated with antimonia content. Also two probe A. C conductivity measurement was subjected to all specimens and the best results are achieved with 1mol% $Sb_2O_3$ as a sinter agent and relative density of~98% obtained at 140$0^{\circ}C$ and this composition has a maximum electrical conductivity due to the possible substition of $Sb^{3+}$ for $Zr^{4+}$ site. The effect of $Sb_2O_3$ on the electrical conductivity of th bulk and the grain boundaries has on investigated using frequency dispersion analysis (5~106 Hz) Antimonia addition has a negative in-fluence on both the bulk and the grain boundary conductivity except for a 1 mon% addition. The additive antimonia has improve a modulus of rupture to 60~MPa due to metastable-tetragonal phase apparence and decrease the hardness with increasing the $Sb_2O_3$ content.

• 한국세라믹학회지
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• 제30권3호
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• pp.199-205
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• 1993

Effects of grain size distribution on the breakdown voltage of ZnO varistors were investigated in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems, respectively. The grain size was increased with increasing sintering temperature maintaining lognormal distribution in both systems. The width of grain size distribution of ZnO-Bi2O3-CoO-Sb2O3 system was narrower than that of ZnO-Bi2O3-CoO-Sb2O3 system. The breakdown voltage(Vb) was decreased by increasing sintering temperature(1000~135$0^{\circ}C$) and sintering time(0.5~5hr), due to the enhancement of ZnO grain growth. The current path of the ZnO varistor was dependent on the distribution of the largest grains (chains of long grains) between the electrodes.

• 한국재료학회지
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• 제22권12호
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• pp.689-695
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• 2012

We have examined the co-doping effects of 1/2 mol% NiO and 1/4 mol% $Cr_2O_3$ (Ni:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Ni,Cr-doped ZBS, ZBS(NiCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were detected for all of compositions. For the sample with Sb/Bi = 1.0, the Pyrochlore was decomposed and promoted densification at lower temperature by Ni rather than by Cr. A homogeneous microstructure was obtained for all of the samples affected by ${\alpha}$-spinel. The varistor characteristics were not dramatically improved (non-linear coefficient, ${\alpha}$ = 5~24), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.17 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to have been divided into two types, i.e., one is tentatively assigned to ZnO/$Bi_2O_3$ (Ni,Cr)/ZnO (0.98 eV) and the other is assigned to a ZnO/ZnO (~1.5 eV) homojunction.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.278-281
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• 1991

1) The specimen with 0.175[mol%] of additive $Sb_2O_3$ was minute and didn't appear porosity. The relation between the ratio of resistivity at $160^{\circ}C$ to that at $121^{\circ}C$ of the specimen with 0.175[mol%] of additive $Sb_2O_3$ was $3{\times}10^4$ and it's great value from among specimens. 2) The curie temperature of the specimen with 0.2 [mol%] of additive $Sb_2O_3$ was $140^{\circ}C$ AND it's great value from among specimens and those of other were $121^{\circ}C$ in all therefore, the specimen with above 0.2[mol%] of additive $Sb_2O_3$ is not match for PTCR 3) The variation of radiation properties of the specimen with 0.2[mol%] of additive $Sb_2O_3$ was very steep in the range of far-infrared $5{\sim}10[{\mu}m]$ but radiation percentage was very high of 0.92 in the range of $10[{\mu}m]$.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 제33회 추계학술대회논문집
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• pp.449-452
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• 2009

EPDM(Ethylene-propylene diene monomer)계 고무의 난연성 향상을 위하여 무기계 난연재료인 $Al(OH)_3$와 $Sb_2O_3$를 첨가하여 물성 및 열적 특성을 조사하였다. 각 시편의 물성은 큰 차이를 보이지 않았으나, 난연재료의 함량이 증가할 수 록 비중과 경도는 높아지는 반면에 신율은 낮아지는 경향이 있었다. 본 연구에서는 열분석과 난연성 시험을 실시하였고, 결과적으로 난연재료의 함량이 10phr 이상에서는 난연 효과가 확연히 나타나는 것으로 판단되었다.

• 공업화학
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• 제31권6호
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• pp.646-652
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• 2020

본 연구는 200~500 ℃ 영역에서 NOx를 제어하기 위한 NH3-SCR 실험을 수행하였다. V/Sb/TiO2 조성의 촉매에서 Sb/TiO2의 소성온도를 다르게 하여 반응활성 실험을 진행하였다. 그 결과 Sb/TiO2의 소성온도가 600 ℃일 때, 가장 효율이 우수하였으며, 특히 반응온도 250 ℃에서 NOx 전환율이 80% 가까이 나오는 것을 확인할 수 있었다. 이와 같이 다른 소성온도로 제조하였을 때 활성증진의 원인을 도출하기 위하여 H2-TPR, XRD, BET, Raman, XPS 분석을 진행하였다. 그 결과 활성이 우수하였던 Sb/TiO2의 소성온도를 600 ℃로 제조하였을 때, VSbO4가 생성되는 것을 확인하였으며, 이 종이 생성됨으로써 V의 비 화학양론종이 증가하여 V/Sb/TiO2의 NOx 전환율이 우수한 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.376-380
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• 2008

The optical properties of multi layered thin films with $Sb_2O_3/Na_3AlF_6/Sb_2O_3/Cr$ were simulated by using EMP(Essential Macleod Program). EMP is a comprehensive software package to design and analyse the optical characteristics of multi-layered thin film. $Sb_2O_3$ and $Na_3AlF_6$ were selected as a high refractive index and low refractive index material respectively. Additionally Cr was chosen as mid reflective material. Optical properties including color effect were systematically studied in terms of different optical thickness of low refractive index material. The optical thickness of $Na_3AlF_6$ was changed as 0.25, 0.5, 0.75 and $1.0\lambda$. The film with 0.25, 0.5, 0.75 and $1.0\lambda$ of optical thickness showed mixed color range between purple and red range, yellowish green and bluish green, purple and mixed color range of green and purple respectively.

• 한국재료학회지
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• 제22권12호
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• pp.682-688
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• 2012

In this study we aimed to examine the co-doping effects of 1/6 mol% $Co_3O_4$ and 1/4 mol% $Cr_2O_3$ (Co:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Co,Cr-doped ZBS, ZBS(CoCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were formed in all systems. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 by Cr rather than Co. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(CoCr), the varistor characteristics were improved (non-linear coefficient, ${\alpha}$ = 20~63), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to be composed of an electrically single barrier (0.94~1.1 eV) that is, however, somewhat sensitive to ambient oxygen with temperature. The phase development, densification, and microstructure were controlled by Cr rather than by Co but the electrical and grain boundary properties were controlled by Co rather than by Cr.