• 제목/요약/키워드: ${Er_2}{O_3}$

검색결과 226건 처리시간 0.039초

Er이 도핑된 졸-겔 코팅막의 발광특성 (Near IR Luminescence Properties of Er-doped Sol-Gel Films)

  • Lim, Mi-Ae;Seok, Sang-Il;Kim, Ju-Hyeun;Ahn, Bok-Yeop;Kwon, Jeong-Oh
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.136-136
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    • 2003
  • In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

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$Er_2O_3$가 첨가된 ZnO-$Pr_6O_{11}$계 바리스터의 써지특성에 소결온도의 영향 (Influence of Sintering Temperature on Surge Characteristics of $Er_2O_3$-Doped ZnO-$Pr_6O_{11}$-Based Varistors)

  • 김명준;박종아;유대훈;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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    • pp.171-174
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    • 2004
  • The surge characteristics of $Pr_6O_{11}$-based ZnO varistors consisting of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Er_2O_3$ ceramics were investigated with sintering temperature in the range of $1335{\sim}1345^{\circ}C$. As the sintering temperature is raised, the average grain size was marked1y increased in the range of $9.67{\sim}14.07\;{\mu}m$ and the ceramic density was increased in the range of $5.46{\sim}5.59\;g/cm^3$. While, the nonlinear exponent was decreased in the range of 64.9~44.1 and the clamping voltage ratio was improved in the range of 1.99~2.08. The best varistor properties was obtained from the varistors sintered at $1335^{\circ}C$, exhibiting a maximum (64.9) in the nonlinear exponent and a minimum (1.99) in the clamping voltage ratio.

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고압용 X7R 적층 칩 캐패시터의 Er2O3 및 유리프릿 첨가에 따른 전기적 특성 (The Electrical Properties of High Voltage Mutilayer Chip Capacitor with X7R by addition of Er2O3 and Glass Frit)

  • 윤중락;김민기;정태석;우병철;이석원
    • 한국전기전자재료학회논문지
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    • 제21권5호
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    • pp.440-446
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    • 2008
  • To manufacture the MLCC with X7R for high voltage stability, $BaTiO_3-MgO-MnO_2-Y_2O_3$ with $(Ba_{0.4}Ca_{0.6})SiO_3$ glass frit was formulated. Based on this composition, the addition of $Er_2O_3$ showed that TCC(Temperature Coefficient Capacitance) at $85^{\circ}C$ was improved from 5 % to ${\sim}0\;%$, but the dielectric constant and IR (Insulation Resistance) were decreased. The glass frit improved the dielectric constant and IR, so the appropriate contents of $Er_2O_3$ and glass frit were 0.6 mol% and 1 wt%, respectively. It showed that the dielectric constant and RC constant were 2,550 and 2,000 (${\Omega}F$), respectively in the sintering condition at $1250^{\circ}C$ in PO2 $10^{-7}$ Mpa. The MLCC with $3.2{\times}1.6$ (mm) size and $1\;{\mu}F$ was also suited for X7R with the above composition.

Er과 Yb이 동시 도핑된 YCa4B3O10의 광 특성 (Optical Characteristics of Er and Yb co-doped YCa4B3O10)

  • 장원권;유영문
    • 한국전기전자재료학회논문지
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    • 제20권12호
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    • pp.1082-1086
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    • 2007
  • Optical characteristics of $YCOB(YCa_4B_3O_{10})$, known as a crystal of self frequency doubling, was investigated when Yb and Er ions were co-doped 20 % and 2 %, respectively. The absorption cross section of Er,Yb:YCOB crystal at $1.0\;{\mu}m$ was larger than that of Yb:YCOB, which means that the former was profitable for more energy absorption than the latter. The fluorescent lifetime at $1.5\;{\mu}m$ was measured to be 1.27 ms at room temperature, and lengthened to 1.54 ms and 1.62 ms at low temperatures of 77 K and 6 K, respectively. The line widths of fluorescent spectrum at $1.5\;{\mu}m$ were getting narrower as lowering temperature. However, we didn't observe a temperature dependent peak wavelength shift.

ZrO2(Y2O3)계 세라믹스의 소결성과 전기전도도에 대한 M2O3의 영향(III) : ZrO2-Y2O3-Ln2O3계 세라믹스 (Effect of M2O3 on the Sinterbility and Electrical Conductivity of ZrO2(Y2O3) System(III) : Ceramics of the ZrO2-Y2O3-Ln2O3 System)

  • 오영제;정형진;이희수
    • 한국세라믹학회지
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    • 제24권2호
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    • pp.123-132
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    • 1987
  • Yttria-stabilized zirconia with erbia-lanthana were investigated with respect to the amount of Ln2O3 (Ln; Er, La) addition in the range of 0.5∼5 mol% to the base composition of 8 mol% yttriazirconia. Following analysis and measurement were adopted for the characterization of synthesizes of solid electrolyte; phase transformation, lattice parameter, crystallite size, relative density, chemical composition and SEM/EDS. Electrical conductivity by two-probe method versus temperature from 350$^{\circ}C$ to 800$^{\circ}C$ and frequency in the range of 5Hz∼13MHz by complex impedance method was also conducted together with the determination of oxygen ion transference number by EMF method for the evaluation of their electrical properties. The results were as followsing; Electrical conductivity were decreased with increase in Ln2O3 content, but their activation energies increased. In the case of La2O3 addition, espicially, its electrical conductivity was decreased owing to the segregation of second phases at the grain-boundary. Grain-boundary conductivity of the specimen contained 0.5 mol% Er2O3 exhibited a maximum conductivity among thecompositions experimented. However, their bulk conductivities decreased in both case. Oxygen ion transference number was also reduced with decrease in oxygen partial pressure. For example, in the case of Er2O3 addition it retained value in the range of 0.97∼0.94 abvove 4.74${\times}$10-2in oxygen partial pressure. With the increase in the quantities of the evaporation of additive components, the crystallite size of stabilized zirconia decreased, and their relative density also reduced owing to the formation of porosity in their matrices. In the case of La2O3 the sinterbility was improved in the limited amount of addition up to 0.5 mol%, in the same range of addition the strength of sintered bodies were improved perhaps owing to the precipitation of metastable tetragonal phase in the fully stabilized zirconia.

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$Er^{3+}$첨가 중금속 산화물 유리의 다중포논 완화와 주파수 상향 전이 현상 (Multiphonon relaxation and frequency upconversion of $Er^{3+}$ ions in heavy metal oxide glasses)

  • 최용규;김경헌;허종
    • 한국광학회지
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    • 제9권4호
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    • pp.221-226
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    • 1998
  • $Er_2O_3$를 첨가한 $PbO-Bi_2O_3-Ga_2O_3$ 삼성분계 중금속 산화물 유리로부터 발생하는 $1.5\mu\textrm{m}$와 2.7$\mu\textrm{m}$ 등의 형광에 대하여 복사 천이율, 형광 수명, 흡수 및 유도 방출 단면적 등을 조사하였다. 중금속 산화물 유리의 낮은 포논 에너지($~500cm^{-1}$)로 인하여 기존 산화물 유리로부터 관찰할 수 없었던 형광들의 양자 효율이 크게 높아졌으며 방출 단면적도 증가하였다. 한편, 798 nm 여기광의 상향 전이를 통한 녹색과 적색의 형광이 방출됨을 확인하였고, 각 에너지 준위의 형광 수명을 이용하여 다중포논 완화(multiphonon relaxation)를 정량적으로 규명하였다. $Er^{3+}:^4S_{3/2}{\rightarrow}^4I_{15/2}$ 천이에 의한 녹색 형광은 기지 유리(host glass)의 밴드 갭(band gap)흡수에 의한 비복사 천이의 영향을 받으므로 이 형광의 양자 효율을 높이기 위해서는 유리를 불활성 기체 분위기에서 용융하거나 자외선쪽 투과단이 짧은 유리 망목 형성제(glass-vetwork former)가 첨가된 기지 조성을 선택하는 것이 바람직하다.

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Optical, Mechanical and Tribological Properties of $Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ Doped Polycrystalline Silicon Nitride Ceramics

  • ;이수완
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.51.1-51.1
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    • 2010
  • $Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ doped polycrystalline silicon nitride were prepared by hot pressed sintering at $1850^{\circ}C$ and their optical transmittance were investigated in visible and in infrared region. Mechanical and tribological properties were also investigated. Grain growth in silicon nitride was reduced with addition of $Y_2O_3$ and $Nd_2O_3$. 1 wt.% of each rare earth metal were sintered with 3 wt.% MgO, 9wt.% AlN and 87 wt.% of ${\alpha}-Si_3N_4$. Adding these rare earth metal oxides shows good mechanical properties as high strength and toughness and also shows low friction coefficient.

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