• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.228-231
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• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

• 한국세라믹학회지
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• 제36권11호
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• pp.1261-1265
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• 1999

Effect of SiC particle size of the densification of Al2O3-SiC composite during pressureless sintering was investigated. Two types of SiC powders having average particle size of 0.15${\mu}{\textrm}{m}$ and 3${\mu}{\textrm}{m}$ were used. Densification rate of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was slower than that of the specimen containg 3${\mu}{\textrm}{m}$ SiC particles. Although the relative density of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was below 90% of theoretical density after sintering at 155$0^{\circ}C$ the complete closure of open pores occurred. Therefore full densification could be obtained by subsequent HIP. On the other hand in the specimen containing 3${\mu}{\textrm}{m}$ SiC particles the complete closed pore was observed at 95% of theoretical density. Such a fast pore closure in the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles is likely to occur as a result of dense reaction layer formation on the specimen surface which is attributed to the high reactivity of small size particles with sintering atmosphere.

• 한국세라믹학회지
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• 제40권9호
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• pp.891-896
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• 2003

IGCC 발전 시스템에 사용되는 고온 가스 필터에 대하여 용융 Si 침윤공정 방법을 사용한 고강도 반응소결 탄화규소 고온 가스 필터 제조 공정이 개발되었다. 용융 Si 침윤 반응으로 제조된 반응소결 탄화규소의 상온 및 고온 파괴강도는 약 50-123, 60-66 MPa이었으며, 반응소결 탄화규소 다공체의 평균기공크기 및 기공율의 범위는 각각 60- 70 $\mu\textrm{m}$ 및 약 34 vol%이었다. 용융 Si 침윤 방법으로 제조된 반응 소결 탄화 규소 다공체에서는 SiC 입자 사이에 SiC/Si으로 이루어진 기지 상이 형성되어 고온 파괴 강도가 점토 결합 탄화 규소 다공체보다 우수하였다. 소결된 지지층 위에 Si 분말이 첨가되지 않은 slurry를 사용하여 여과층을 제조하였다. 여과층에 사용된 Sic 입자의 크기가 10$\mu\textrm{m}$에서 34 $\mu\textrm{m}$로 증가됨에 따라 SiC 입자 사이에 형성된 기지상의 두께가 증가하였다. 분진이 포함된 유체의 face velocity 변화에 따른 압손의 관계는 US filter사 Schumacher type 20 filter의 기체 유동 특성과 비슷하게 나타났으며, 분진여과 측정시 4분 내에 누출 분진의 크기가 1 $\mu\textrm{m}$ 크기 이하로 감소되었다.

• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.51-56
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• 2012

습식공정으로 thermal via용 SI 관통 via를 형성하기 위해 TMAH 용액의 농도와 온도에 따른 Si 기판의 이방성 습식식각 거동을 분석하였다. TMAH 용액의 온도를 $80^{\circ}C$로 유지한 경우, 5 wt%, 10 wt% 및 25 wt% 농도의 TMAH 용액은 각기 $0.76{\mu}m/min$, $0.75{\mu}m/min$ 및 $0.30{\mu}m/min$의 Si 식각속도를 나타내었다. 10 wt% TMAH 용액의 온도를 $20^{\circ}C$와 $50^{\circ}C$로 유지시에는 각기 $0.07{\mu}m/min$와 $0.23{\mu}m/min$으로 식각속도가 저하하였다. Si 기판의 양면에 동일한 형태의 식각 패턴을 형성하여 $80^{\circ}C$의 10 wt% TMAH 용액에 장입하고 5시간 식각하여 깊이 $500{\mu}m$의 관통 via hole을 형성하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• 한국세라믹학회지
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• 제41권2호
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• pp.125-130
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• 2004

서로 다른 크기의 SiC 원료분말을 첨가한 A1$_2$O$_3$-SiC 복합재료의 미세조직과 그에 따른 기계적 물성의 변화를 관찰하였다. 0.15 $mu extrm{m}$의 SiC가 첨가된 복합재료의 경우 기지상의 입성장이 효과적으로 억제되었다 그러나, 소수의 비정상입자가 생성된 이후에는 이들 입자의 급격한 성장으로 불규칙한 형상의 커다란 입자로 구성된 미세조직을 보이며, 파괴강도값은 급격히 감소하였다. 3 $\mu\textrm{m}$의 SiC가 첨가된 경우에는 기지상의 입성장이 일어났으나, 소수의 비정상입자가 생성된 이후에는 과도한 입성장은 억제되고 일정한 크기의 비정상입자가 시편 전체에 균일하게 형성된 미세조직을 보였다. 한편, 0.15 $\mu\textrm{m}$와 3 $\mu\textrm{m}$의 SiC 입자를 동시에 첨가한 시편은 균일한 크기의 비정상입성장의 미세조직을 보였으나, 비정상입성장이 일어났음에도 불구하고 기계적 물성은 우수하게 유지되었다 즉, 비정상입성장에 의해 미세조직에는 큰 변화가 일어났으나, 파괴강도값에는 변화가 없었다.

• 전자공학회논문지A
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• 제33A권5호
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• pp.117-124
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• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.217-217
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• 2009

This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.303-306
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• 2009

This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths, $10{\mu}m$ width, and $0.4{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the $60{\sim}100{\mu}m$ long cantilevers, the fundamental frequency appeared at $373.4{\sim}908.1\;kHz$. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.