• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.180-184
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• 1989

Overviews of vertical and horizontal GaAs/AlGaAs OEIC are shown. Researching double Zn diffusion process, we obtain Xj=At1/2-Bd1, where A=2.5${\mu}{\textrm}{m}$/[hr]1/2, B=0.625, of which process is recommended for exact diffusion interface area control of GaAs/AlGaAs. It is proved to be 100A/100A AlAs/GaAs using MOCVD by measurement of photo-luminescence which shows a luminescence peak corresponding to the 798.4nm wavelength calculated values of 38meV ground state above GaAs conduction band.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.296-296
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• 2012

펄스 직류 플라즈마 전원 공급시 임피던스 트랜스포머의 유무에 따른 전기적 특성 변화를 연구하였다. 실험 변수는 펄스 직류 전압(350~550 V), 펄스 직류 주파수(100~250 kHz), 리버스 시간(0.4~1.2 ${\mu}sec$.)이었다. 전기적 특성은 주로 오실로스코프를 이용하여 분석하였다. 펄스 직류 전원의 경우 임피던스 트랜스포머의 여부에 상관없이 주파수가 커지거나 리버스 시간이 커지면 peak-to-peak 전압이 증가한다는 사실을 이해하였다. 본 실험은 저진공에서 실시하였다. 임피던스 트랜스포머를 부착하지 않은 경우, GaAs의 식각 속도는 10 sccm BCl3를 사용한 경우 최대 $0.4{\mu}m$까지 얻을 수 있었다. 감광제에 대한 최대 식각 선택비는 약 2.5:1이었다. 또한 식각된 GaAs의 표면은 깨끗하였으며, 염소와 관련된 잔류 물질은 거의 발견되지 않았다. 임피던스 트랜스포머를 설치하면 GaAs의 식각 속도는 증가하였으나 샘플 척에 열 부하가 많았다. 펄스 직류 플라즈마를 이용한 처리장치 개발시 전기적 특성 변화 및 공정 속도 조절에 있어 임피던스 트랜스포머의 역할 및 그 특성에 대한 많은 연구가 필요하다는 본 기초 연구를 통해 얻을 수 있었다.

• 전기전자학회논문지
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• 제22권1호
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• pp.209-212
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• 2018

본 논문에서는 P(VDF-TrFE)유기물 강유전체 기반 metal-ferroelectric-metal (MFM) capacitor 와 차세대 반도체 물질인 질화갈륨 반도체를 활용한 네거티브 커패시턴스 전계효과 트랜지스터를 제작 및 분석 하였다. 27 nm의 두께의 P(VDF-TrFE) MFM 커패시터의 분극지수는 4 MV/cm에서 $6{\mu}C/cm^2$ 값을 나타내었으며 약 65 ~ 95 pF의 커패시턴스 값을 나타내었다. 강유전체의 커패시턴스와 전계효과 트랜지스터의 커패시턴스 매칭을 분석하기 위해 제작된 P(VDF-TrFE) MFM 커패시터는 GaN 전계효과 트랜지스터의 게이트 전극에 집적화 되었으며 집적화되기 전 104 mV/dec 의 문턱전압 이하 기울기에서 82 mV/dec 값으로 개선된 효과를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.339-339
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• 2010

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

• Journal of electromagnetic engineering and science
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• 제17권4호
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.128.2-128.2
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• 2014

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

• Journal of electromagnetic engineering and science
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• 제16권1호
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• 전기전자학회논문지
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• 제23권1호
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Asian-Australasian Journal of Animal Sciences
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• 제32권5호
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• pp.629-636
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• 2019

Objective: The study was designed to determine the cytotoxic effect of gallic acid (GA), obtained by the hydrolysis of tannins, on mice TM4 Sertoli cells apoptosis. Methods: In the present study, non-tumorigenic mice TM4 Sertoli cells were treated with different concentrations of GA for 24 h. After treatment, cell viability was evaluated using WST-1, mitochondrial dysfunction, cells apoptosis and necrosis was detected using JC-1, Hoechst 33342 and propidium iodide staining. The expression levels of Cyclin B1, proliferating cell nuclear antigen (PCNA), Bcl-2-associated X protein (BAX), and Caspase-3 were also detected by quantitative real-time polymerase chain reaction and Western-blotting. Results: The results showed that 20 to $400{\mu}M$ GA inhibited viability of TM4 Sertoli cells in a dose-dependent manner. Treatment with $400{\mu}M$ GA significantly inhibited PCNA and Cyclin B1 expression, however up-regulated BAX and Caspase-3 expression, caused mitochondrial membrane depolarization, activated Caspase-3, and induced DNA damage, thus, markedly increased the numbers of dead cells. Conclusion: Our findings showed that GA could disrupt mitochondrial function and caused TM4 cells to undergo apoptosis and necrosis.

• 한국결정성장학회지
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• 제8권3호
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• pp.387-387
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• 1998

본 연구에서는 기상화학 증착법으로 성장되는 GaN 후막에 대한 열역학적 전사모사를 수행하고 이를 실험결과와 비교, 검토하였다. 열역학적계산은 화학양론적 연산방식을 이용하여 수치 해석하였으며, 모사의 변수로써 온도범위는 400∼1500K, 기상비율은 $(GaCl_3)/[GaCl_3+NH_3],(N_2)/(GaCl_3+NH_3)$를 취하였다. GaN의 성장온도 범위는 이론적인 계산이 실험결과보다 훨씬 낮은 450∼750K으로 예측되었다. 성장온도에서 모사결과와 실험결과와의 차이는 GaN의 기상 에픽텍시 성장이 박막성장의 높은 활성화 에너지 때문에 반응속도론적으로 국한된 영역 내에서 발생한다는 것을 나타낸다.