• ETRI Journal
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• v.18 no.3
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• pp.171-179
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• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.150-150
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• 2003

wide bind gap과 wurtzite hexagonal structure를 가지고 있으며 청색 발광 및 청자색 레이저 특성을 보이는 III-V족 화합물반도체 GaN는 laser diodes (LD) 및 light emitting diodes (LED) 재료로 주목받고있는 주요 전자재료이다. 본 연구에서는 GaN를 chemical vapor deposition (CVD) 법을 이용하여 vapor-liquid-solid (VLS) mechanisum에 의하여 GaN나노와이어 형태로 성장시켰다. 기판은 (001)Si을 사용하였고 suputtering을 이용하여 GaN와 AlN의 double buffer layer (DBL)를 증착시켰으며 촉매로는 Ni을 사용하였다. 또한, 원료로는 고순도 Ga금속과 NH$_3$ gas를, carrier gas로는 Ar을 사용하여 GaN/AlN/(001)Si 위에 GaN 나노와이어를 성장시켰다. 성장된 GaN 나노와이어는 DBL의 두께, Ga source의 양, 튜브 안의 압력, 튜브 안의 위치 등의 제 공정변수에 따라 tangled, straight 등의 다양한 형상을 보였으며 지름은 약 30~100 nm, 길이는 수 $\mu\textrm{m}$로 관찰되었다. GaN나노와이어의 결정성, 형상 및 발광특성 등을 x-ray diffraction (XRD), photoluminesence (PL), scanning electron microscope (SEM), transmision electron microscope (TEM) 등을 이용하여 측정하였으며 제 공정변수와의 상관관계를 규명하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.305-305
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• 2011

Type-II 반도체 나노 구조는 그것의 band alignment 특성으로 인해 광학 소자에 다양한 응용성을 가진다. 특히, 대표적인 Type-II 반도체 나노 구조인 InSb/InAs 양자점의 경우, 약 3~5 ${\mu}m$의 mid-infrared 영역의 spectral range를 가지므로, 장파장을 요하는 소자에 유용하게 적용될 수 있다. 또한, Type-II 반도체 나노 구조의 밴드 구조를 staggered gap 혹은 broken gap 구조로 조절함으로써 infrared 영역 광소자의 전자 구조를 유용하게 바꾸어 적용할 수 있다. 최근, GaSb wafer 위에 InSb/InAsSb 양자점을 이용하여 cutoff wavelength를 6 ${\mu}m$까지 연장한 IR photodetector의 연구도 보고되고 있다. 하지만, GaSb wafer의 경우 그것의 비용 문제로 인해 산업적 적용이 쉽지 않다는 문제가 있다. 이러한 문제를 해결하기 위해 GaAs wafer와 같은 비용 효율이 높은 wafer를 사용한 연구가 필요할 것이다. 본 연구에서는 Molecular Beam Epitaxy(MBE)를 이용하여 undoped InAs wafer 와 semi-insulating GaAs wafer 상에 InSb 양자 구조를 형성한 결과를 보고한다. InSb 양자 구조는 20층 이상의 다층으로 형성되었고, 두 가지 경우 모두 400${\AA}$ spacer를 사용하였다. 단, InAs wafer 위에 형성한 InSb 양자 구조의 경우 InAs spacer를, GaAs wafer 위에 형성한 양자 구조의 경우 InAsSb spacer를 사용하였다. GaAs wafer 위에 양자 구조를 형성한 경우, InSb 물질과의 큰 lattice mismatch 차이 완화 뿐 아니라, type-II 밴드 구조 형성을 위해 1 ${\mu}m$ AlSb 층과 1 ${\mu}m$ InAsSb 층을 GaAs wafer 위에 미리 형성해 주었다. 양자 구조 형성 방법도 두 종류 wafer 상에서 다르게 적용되었다. InAs wafer 상에는 주로 일반적인 S-K 형성 방식이 적용된 것에 반해, GaAs wafer 상에는 migration enhanced 방식에 의해 양자 구조가 형성되었다. 이처럼 각 웨이퍼에 대해 다른 성장 방식이 적용된 이유는 InAsSb matrix와 InSb 물질 간의 lattice mismatch 차이가 6%를 넘지 못하여 InAs matrix에 비해 원하는 양자 구조 형성이 쉽지 않기 때문이다. 두 가지 경우에 대해 AFM과 TEM 측정으로 그 구조적 특성이 관찰되었다. 또한 infrared 영역의 소자 적용 가능성을 보기 위해 광학적 특성 측정이 요구된다.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.359-366
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• 2002

The purpose of this study is to investigate the properties of LSGM electrolyte and LSM cathode. The unit cell based on the optimum conditions and processing for high performance was fabricated and measured. The single phase of $LaGaO_3$ was obtained on sintering at $1500^{\circ}$ for 6h with composition of $(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}와 (La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ and $(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$. The grain size of the sintered body was about $10∼30{\mu}m$ and electrical conductivity was 0.13 S/cm measured at $800^{\circ}$. The single phase of $LaMnO_3$ structure in $(La1-xSrx)MnO_3$ system was obtained at x=0∼0.2 and the particle size of the synthesized powder was about 40 nm. The unit cell was prepared by firing at $1200^{\circ}$ for 1h with $(La_{0.9}Sr_{0.1})MnO_3$ cathode and 0.9NiO-0.1YSZ anode screen-printed on surfaces of $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ electrolyte. The grain size of the electrode was close to $1{\mu}m$ and the electrode had porous structure. The maximum power density of unit cell showed $0.3W/cm^2$ at $800^{\circ}$.

• Journal of electromagnetic engineering and science
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• v.14 no.3
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• pp.284-292
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• 2014

This paper presents a characteristic evaluation of commercial gallium nitride (GaN) transistors having two different gate-lengths of $0.4-{\mu}m$ and $0.25-{\mu}m$ in the design of a class-S power amplifier (PA). Class-S PA is operated by a random pulse-width input signal from band-pass delta-sigma modulation and has to deal with harmonics that consider quantization noise. Although a transistor having a short gate-length has an advantage of efficient operation at higher frequency for harmonics of the pulse signal, several problems can arise, such as the cost and export license of a $0.25-{\mu}m$ transistor. The possibility of using a $0.4-{\mu}m$ transistor on a class-S PA at 955 MHz is evaluated by comparing the frequency characteristics of GaN transistors having two different gate-lengths and extracting the intrinsic parameters as a shape of the simplified switch-based model. In addition, the effectiveness of the switch model is evaluated by currentmode class-D (CMCD) simulation. Finally, device characteristics are compared in terms of current-mode class-S PA. The analyses of the CMCD PA reveal that although the efficiency of $0.4-{\mu}m$ transistor decreases more as the operating frequency increases from 955 MHz to 3,500 MHz due to the efficiency limitation at the higher frequency region, it shows similar power and efficiency of 41.6 dBm and 49%, respectively, at 955 MHz when compared to the $0.25-{\mu}m$ transistor.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.88-91
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• 2000

An MMIC oscillator operating at the 24.55 GHz has been designed using 0.2 ${\mu}{\textrm}{m}$AlGaAs/InGaAs/GaAs Pseudomorphic HEMT technology. The active device used in the oscillator design has a 0.2 ${\mu}{\textrm}{m}$ gate length PHEMT with 4$\times$80 ${\mu}{\textrm}{m}$ gate width. We obtained 4.08 dB of S$_{21}$ gain and 317 mS/mm of transconductance, and extrapolated unit current gain cut-off frequency (f$_{T}$) and maximum oscillation frequency (fmax) were 62 GHz and 120 GHz, respectively. The circuit are based on a series feedback and negative resistance topology. Microstrip line open stub is used to terminating. The oscillator circuits has designed for delivering maximum power to load and conjugated matching. The simulated small signal negative resistance was 50 Ω. We obtained 1.002 of loop gain and 0.0005$^{\circ}$angle from the simulation by HP libra 6.1. The layout for oscillator is 1.2$\times$1.8 $\textrm{mm}^2$.>.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.72-75
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• 1985

1.3$\mu$m double-heterostructure GaInAsP/InP wafers have been grown by LPE and broad contact laser diodes have been fabricated. Electrical and optical characteristics of these lasers under pulsed lasing operation at room temperature are described. Typical threshold currents are below 2 Amp. corresponding to threshold current densities of 3 - 6 KAmp./$\textrm{cm}^2$ and peak lasing wavelength is shown to be at 1.315 $\mu$m.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.111-115
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• 1997

Vertical-cavity surface-emitting laser(VCSEL)s operating at 1.3-micron wavelength for optical communication are fabricated by using Si/SiO$_2$dielectric quater-wave pairs on both sides of the InGaAsP(${\lambda}_g$=1.3 ${\mu}{\textrm}{m}$) gain material. VCSELs are optically pumped with a Nd-YAG laser in a pulsed mode and lasing around 1.3 microns is observed. Lasing characteristics such as threshold pump intensity as a function of mirror-reflectivity, polarization, and threshold pump density with pump spot size are investigated.

• Journal of Digital Convergence
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• v.12 no.7
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• pp.291-296
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• 2014

Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.