• Title/Summary/Keyword: ${\mu}$-GA

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Simulation of Optical Characteristics of 1.3 μm GaAs-Based GaAsSb/InGaAs and GaAsSb/InGaNAs Quantum Well Lasers for Optical Communication (광통신용 GaAs 기반 1.3 μm GaAsSb/InGaAs와 GaAsSb/InGaNAs 양자우물 레이저의 광학적특성 시뮬레이션)

  • Park, Seoung-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.1-6
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    • 2011
  • Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

사파이어 기판위에 성장된 GaN의 Bow 특성 연구

  • Seo, Yong-Gon;Sin, Seon-Hye;Kim, Du-Su;Yun, Hyeong-Do;Hwang, Seong-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.222-222
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    • 2013
  • GaN 기반 반도체는 넓은 bandgap을 가지고 있어 가시광부터 자외선까지 다양한 광전소자에 유용하게 사용된다. 광전소자중 발광다이오드의 경우 대부분 사파이어 기판위에 성장된다. 하지만 사파이어와 GaN의 격자 불일치 및 열팽창 계수의 차이로 인해 고품질의 GaN를 성장하기가 어렵다. 특히 열팽창 계수의 차이는 GaN 성장 공정이 고온에서 이루어지기 때문에 성장후 상온으로 온도가 떨어질 때 웨이퍼의 bowing을 발생시키고 동시에 dislocation이나 crack과 같은 결함이 생성되 GaN 성장막의 품질을 떨어트린다. 웨이퍼의 크기가 커지면 커질수록 웨이퍼 bowing은 커져 이에 대한 연구는 중요하다. 본 논문에서 2인치 사파이어 기판위에 성장된 GaN의 bow특성을 알아보기 위해 먼저 simulation을 하였고 실제로 성장된 GaN 웨이퍼와 비교를 하였다. c-plane 사파이어 기판위에 성장된 c-plane GaN의 bow특성을 알아보기 위해 성장 온도 $1,100^{\circ}C$에서 GaN두께를 1 ${\mu}m$에서 10 ${\mu}m$까지 1 ${\mu}m$씩 변화시켜 가며 simulation을 하였다. GaN두께가 1 ${\mu}m$일때는 bow가 11 ${\mu}m$, 6 ${\mu}m$ 일때는 54.7 ${\mu}m$, 10 ${\mu}m$ 일때는 108 ${\mu}m$를 얻어 GaN두께가 1 ${\mu}m$씩 증가할 때 마다 bow가 약 10 ${\mu}m$씩 증가하였다. 성장온도에 대한 영향을 알아보기 위해 $700^{\circ}C$에서 $1,200^{\circ}C$까지 $100^{\circ}C$씩 증가시켜며 bow특성 simulation을 하였다. 6 ${\mu}m$성장된 GaN의 경우 성장온도가 $100^{\circ}C$ 씩 증가할 때 bow는 약 6 ${\mu}m$ 증가하였다. 실제 성장된 c-plane GaN웨이퍼와 비교하기 위해 GaN을 각각 3 ${\mu}m$와 6 ${\mu}m$를 성장시켰고 high resolution x-ray diffraction장비를 사용하여 bow를 측정한 결과 각각 28 ${\mu}m$와 61 ${\mu}m$ 였고 simulation결과는 각각 33 ${\mu}m$와 65.5 ${\mu}m$를 얻어 비슷한 결과를 보였다. c-plane 사파이어 기판위에 성장된 c-plane GaN는 방향에 무관하게 동일한 bow 특성을 가지는 반해 r-plane 사파이어 기판위에 성장된 a-plane GaN는 방향에 따라 다른 bow특성을 보인다. a-plane GaN 이방향성적인 bow 특성을 알아보기 위해 simulation을 하였다. $1,100^{\circ}C$에서 a-plane GaN을 성장할 때 두께가 1 ${\mu}m$ 증가할 때마다 bow가 c축 방향으로는 21.7 ${\mu}m$씩 증가하였고 m축 방향으로는 11.8 ${\mu}m$ 씩 증가하여 매우 큰 이방향성적인 bow 특성을 보였다. 실제 r-plane 사파이어 기판위에 성장된 a-plane GaN의 bow를 측정하였고 simulation 결과와 비교해 보았다.

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GaN Grown Using Ti Metal Mask by HVPE(Hydride Vapor Phase Epitaxiy) (HVPE(Hydride Vapor Phase Epitaxiy) 성장법으로 Ti metal mask를 이용한 GaN 성장연구)

  • Kim, Dong-Sik
    • 전자공학회논문지 IE
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    • v.48 no.2
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    • pp.1-5
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    • 2011
  • The epitaxial GaN layer of $120{\mu}m$ ~ $300{\mu}m$ thickness with a stripe Ti mask pattern is performed by hydride vapor phase epitaxy(HVPE). Ti strpie mask pattern is deposited by DC magnetron sputter on GaN epitaxial layer of $3{\mu}m$ thickness is grown by hydride vapor phase epitaxy(HVPE). Void are observed at point of Ti mask pattern when GaN layer is investigated by scanning electron microscope. The Crack of GaN layer is observed according to void when it is grown more thick GaN layer. The full width at half maximum of peak which is measured by X-ray diffraction is about 188 arcsec. It is not affected its crystallization by Ti meterial when GaN layer is overgrown on Ti stripe mask pattern according as it is measure FWHM of overgrowth GaN using Ti material against FWHM of first growth GaN epitaxial layer.

Narrow channel effect on the electrical characteristics of AlGaN/GaN HEMT (AlGaN/GaN HEMT의 채널폭 스케일링에 따른 협폭효과)

  • Lim, Jin Hong;Kim, Jeong Jin;Shim, Kyu Hwan;Yang, Jeon Wook
    • Journal of IKEEE
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    • v.17 no.1
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    • pp.71-76
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    • 2013
  • AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

The Effect of Gibberellic and Abscisic Acids on The Synthesis of Ribonucleic Acid in Seeds and Coleoptiles of Barley (Giberellic acid와 Abscisic acid가 대맥종자(大麥種子) 및 초엽(?葉)에서 핵산합성(核酸合成)에 미치는 영향(影響))

  • Seu, Yong-Taik
    • Applied Biological Chemistry
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    • v.21 no.2
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    • pp.84-102
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    • 1978
  • Barley embryoless half seeds were incubated in medium containing $10{\mu}M$ GA. Time course activity changes of ${\alpha}-amylase$ were studied in extract and medium seperately by the addition of $0.1{\mu}M,\;5{\mu}M,\;and\;10{\mu}M$ ABA in midcourse incubation of 10 hours after GA treatment. MAK profiles of nucleic acids in embryoless half seeds were compared either with $10{\mu}M$ GA treatment or concomitant treatment with $10{\mu}M$ GA and $10{\mu}M$ ABA after 10 hours incubation, Time course changes of weight increase, chlorophyll, protein and RNA consent in addition to RNase activity were studied in the presence of $10{\mu}M$ GA or $10{\mu}M$ ABA in barley coleoptile sections. After 20 hours incubation in the presence of plant hormones, MAK profiles of nucleic acids and reactive distribution of polysome and monosome were investigated. The above results were summarized as follows. 1) The production of ${\alpha}-amylase$ by treatment with GA alone increased at a linear rate in the incubation period and the active secretion of ${\alpha}-amylase$ began from 18 hours incubation in embryoless half seeds. 2) On the contrary to the partial inhibition by addition of $0.1{\mu}M$ ABA, the production of ${\alpha}-amylase$ was completely inhibited by both $5{\mu}M$ and $10{\mu}M$ ABA within 4 hours. Regardless of concentration of GA, the addition of $5{\mu}M$ ABA in midcourse completely inhibited the production of ${\alpha}-amylase$ 3) ABA treatment gave no effect on the secretion of ${\alpha}-amylase$. 4) There were no differences in RNA fractions between GA treatment and concomitant treatment with GA and ABA in the barlye embryoless half seeds. 5) While GA treatment increased the r-RNA fraction, ABA treatment decreased it and increased the s-RNA fraction in the coleoptile sections. 6) GA treatment increased RNA-DNA fraction best ABA treatment decreased it in the coleoptile sections. 7) While GA treatment suppressed RNase activity, ABA treatment increased it in the coleoptile sections. 8) GA treatment gave no great effect on the total RNA but ABA treatment remarkably diminished it in the coleoptile sections. 9) While GA treatment increased the growth and chlorophyll content, ABA treatment decreased them in the coleoptile sections. 10) GA treatment increased the protein synthesis and polysome formation but ABA treatment decreased them in the coleoptile sections. 11) The inhibition effect of ABA on polysome formation seemed to be resulted from the inhibition of r-RNA synthesis by ABA.

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A Study on the ${\ulcorner}$DongMuSunSaSaSangYakSungSangHumGoGa${\lrcorner}$'s Origin and Meaning ("동무선사사상약성상험고가(東武先師四象藥性嘗驗古歌)"의 연원(淵源)과 의의(意義)에 대한 연구(硏究))

  • Park, Seong-Sik
    • Journal of Sasang Constitutional Medicine
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    • v.14 no.2
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    • pp.1-9
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    • 2002
  • I think that the study on the ${\ulcorner}$DongMuSunSaSaSangYakSungSangHumGoGa${\lrcorner}$ of ${\ulcorner}$DongMuYooGo${\lrcorner}$ is basic material explaining the character of sasang-herb and prescription. Through the study on the ${\ulcorner}$DongMuSunSaSaSangYakSungSangHumGoGa${\lrcorner}$'s origin and meaning, I can take the result as follows. The first, that is composed of total 237 herbs of 90 spleen-herb (Soeumin-herb), 61 kidney-herb (Soyangin-herb), 67 lung-herb (Taeeumin-herb) and 19 liver-herb (Taeyangin-herb). The second, the origin of that is ${\ulcorner}$JeJungSinPyun${\lrcorner}$, ${\ulcorner}$BangYakHapPyun${\lrcorner}$ and ${\ulcorner}$EuiHakIpMum${\lrcorner}$. And DongMu classified traditional YakSungGa as spleen-herb, kidney-herb, lung-herb and liver-herb which is suitable to Sasangin, not created that. So we can know that the first understanding for DongMu' s herb is focused on the traditional YakSungGa. The third, DongMu's unique terminology of spleen-herb, kidney-herb, lung-herb and liver herb show his sight of symptom, disease and pharmacology, that is focused on small JangBu. The forth, through herb-nature gathered from traditional YakSungGa, that purposed to classfying each constitutional herb. So we can know his idea that the choice of herb is not in general efficacy but in personal constitution. As mentioned abovet, that can refer to an herbal argument of DongMu and ${\ulcorner}$DongMuYooGoYakSungGa${\lrcorner}$ that make known to be common can refer to an prescriptional argument of DongMu.

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Studies on fabrication of 0.5$mu$m GaAs power MESFET's using a conventional UV lithography and angle evaporations (Conventional UV 리소그라피와 경사각증착에 의한 0.5$mu$m 전력용 CaAs MESFET 제작에 관한 연구)

  • 이일형;김상명;윤진섭;이진구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.130-135
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    • 1995
  • GaAs power MESFET's with 0.5 .mu.m gate length using a conventional UV lithography and angle evaporations are fabricated and then DC and RF characteristics are measured and carefully analyzed. The 0.5$\mu$m GaAs power MESFET's are fabricated on epi-wafers which have an undoped GaAs layer inbetween n+ and n GaAs layers grown by MBE, and by the processes such as an image reversal(IR), air-bridge, and our developed 0.5 .mu.m gate fabrication techniques. The total gate widths of the fabricated 0.5$\mu$m GaAs power MESFETs are 0.6-3.0 mm, the current saturation of them 80-400 mA, the maximum linear and RF output power of them 60-265 mW. The current gain cut-off frequencies for the 0.5$\mu$m GaAs power MESFETs varies 13-16 GHz. For the test frequency of 10 GHz the maximum unilateral transducer power gains and the power added efficiencies of the GaAs power devices are 7.0-2.5 dB and 35.68-30.76 %, respectively.

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GaAs MESFETs using GaAs and AlGaAs buffer layers (GaAs 및 AlGaAs 완충층을 이용한 GaAs MESFET 제작)

  • 곽동화;이희철
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.12
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    • pp.38-43
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    • 1994
  • GaAs and AlGaAs layers were grown by Molecular Beam Epitaxy (MBE) to fabricate hith performance GaAs MESFETs. Optimum growth temperatures were found to be 600$^{\circ}C$ from their Hall measurement data. MESFETs with the gate legth of 1${\mu}$m and the gate width of 100.mu.m were fabricated on the MBE-grown GaAs layters which has i-GaAs buffer layer and characterized. Knee volgate and mazimum transconductance of the devices were 1V, 224mS/mm, respectively. Cut-off frequency at on-wafer measuring pattern was measured to be 18 GHz. The MESFET with the 1${\mu}$m -thick i-Al$_{0.3}Ga_{0.7}$As buffer layer between nactive and i-GaAs was fabricated on order to reduce the leakage current which flows through the i-GaAs buffer layer. Its output resistance was 2.26 k${\Omega}$.mm which increased by a factor of 15 compared with the MESFET without i-Al$_{0.3}Ga_{0.7}$As buffer layer.

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Optimization of multiple-quantum-well structures in 1.55.$\mu$ InGaAsP/InGaAsP SL-MQW DFB-LD for high-speed direct modulation (고속직접변조를 위한 1.55.$\mu$. InGaAsP/InGaAsP SL-MQW DFB-LD의 양자우물구조의 최적화)

  • 심종인;한백형
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.3
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    • pp.60-73
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    • 1997
  • By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

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Micromachined ZnO Piezoelectric Pressure Sensor and Pyroelectric Infrared Detector in GaAs

  • Park, Jun-Rim;Park, Pyung
    • Journal of Electrical Engineering and information Science
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    • v.3 no.2
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    • pp.239-244
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    • 1998
  • Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

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