• Title/Summary/Keyword: ${\beta}-SiC$ 분말

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Fabrication of Sintered Thermistor Body of Fe-Al-Si-O System by Solid Reaction Method (고상반응법에 의한 Fe-Al-Si-Ti-O계 써어미스터 소결체 합성)

  • Gam, Kee-Sool;Gang, Gi-Hun
    • Korean Journal of Materials Research
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    • v.1 no.4
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    • pp.198-205
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    • 1991
  • Sintered thermistor body was fabricated by solid reaction method using $Fe_2O_3, \;Al_2O_3, \;TiO_2$ and Si powder. Surface matrix of sintered body was investigated by SEM and $\beta$-constant was obtained from measurement of resistance variation in liquid bath. The values of thermistor constant $\beta$ of samples in the temperature range $-50~+50^{\circ}C$ were distributed from 927 to 4005k. This thermistor body can be used as temperature sensor for radiosonde.

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Mechanical and Electrical Properties of Si-SiC Fabricated Using SiC-C Composite Powders Synthesized by Sol-gel Process (Sol-gel 법으로 합성된 SiC-C 복합분말을 사용하여 제조된 Si-SiC의 기계적 특성 및 전기저항 특성)

  • Youn, Sung Il;Cho, Gyung Sun;Youm, Mi Rae;Lim, Dae Soon;Park, Sang Whan
    • Journal of the Korean Ceramic Society
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    • v.51 no.5
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    • pp.459-465
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    • 2014
  • In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

Preparation of Self-reinforced Silicon Carbide Ceramics by Hot Pressing (가압소결에 의한 자체강화 탄화규소 세라믹스의 제조)

  • Park, Jong-Gon;Lee, Jong-Kook;Seo, Dong-Seok;Kim, Min-Jeong;Lee, Eun-Gu;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.36 no.12
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    • pp.1356-1363
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    • 1999
  • Self-reinforced silicon carbide was prepared by hot pressing and the control of starting phases of raw materials and its microstructural characteristics was investigated. The specimens with self-reinforced microstructure were obtained from the compacts with mixed compositions of ${\alpha}$-and ${\beta}$-SiC powders. Self-reinforced microstructure which is composed of large dispersed grains with rod-like shape and matrix with small equiaxed grains was formed by the transformation to the ${\alpha}$-SiC with 4H polytype for ${\beta}$-SiC and anisotropic grain growth during the heat treatment. Of all speimens the values of volume fraction maximum length and aspect ratio for large grains with rode-like types were the highest at the specimen with 50 vol% ${\beta}$-SiC in the starting SiC powder and therefore this specimen showed the highest fracture toughness due to the crack deflection by rod-like grains during crack propagation.

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Fabrication of Cu-30 vol% SiC Composites by Pressureless Sintering of Polycarbosilane Coated SiC and Cu Powder Mixtures (Polycarbosilane이 코팅된 SiC와 Cu 혼합분말의 상압소결에 의한 Cu-30 vol% SiC 복합재료의 제조)

  • Kim, Yeon Su;Kwon, Na-Yeon;Jeong, Young-Keun;Oh, Sung-Tag
    • Korean Journal of Materials Research
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    • v.26 no.6
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    • pp.337-341
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    • 2016
  • Cu-30 vol% SiC composites with relatively densified microstructure and a sound interface between the Cu and SiC phases were obtained by pressureless sintering of PCS-coated SiC and Cu powders. The coated SiC powders were prepared by thermal curing and pyrolysis of PCS. Thermal curing at $200^{\circ}C$ was performed to fabricate infusible materials prior to pyrolysis. The cured powders were heated treated up to $1600^{\circ}C$ for the pyrolysis process and for the formation of SiC crystals on the surface of the SiC powders. XRD analysis revealed that the main peaks corresponded to the ${\alpha}$-SiC phase; peaks for ${\beta}$-SiC were newly appeared. The formation of ${\beta}$-SiC is explained by the transformation of thermally-cured PCS on the surface of the initial ${\alpha}$-SiC powders. Using powder mixtures of coated SiC powder, hydrogen-reduced Cu-nitrate, and elemental Cu powders, Cu-SiC composites were fabricated by pressureless sintering at $1000^{\circ}C$. Microstructural observation for the sintered composites showed that the powder mixture of PCS-coated SiC and Cu exhibited a relatively dense and homogeneous microstructure. Conversely, large pores and separated interfaces between Cu and SiC were observed in the sintered composite using uncoated SiC powders. These results suggest that Cu-SiC composites with sound microstructure can be prepared using a PCS coated SiC powder mixture.

Mechanical properties of materials for spectacle lens cutting(II) (안경렌즈 절삭용 재료의 기계적 특성(II))

  • Lee, Young-Il;Kim, Jin-Koo
    • Journal of Korean Ophthalmic Optics Society
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    • v.5 no.1
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    • pp.61-65
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    • 2000
  • ${\beta}$-SiC powder and ${\alpha}$-SiC powders of different particle sizes, containing 5.7wt% $Al_2O_3$ and 4.3wt% $Y_2O_3$ as sintering aids, were hot-pressed at $1780^{\circ}C$ and subsequently annealed at $1950^{\circ}C$ to initiate grain growth. All the hot-pressed and annealed materials consisted of large SiC grains and elongated SiC grains. Typical hardness and fracture toughness of materials for spectacle lens cutting were 15.6 GPa and $5.7MPa{\cdot}m^{1/2}$, respectively.

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Phase and microstructure of hot-pressed SiC-AlN solid solutions (열간가압소결에 의한 SiC-AIN 고용체의 상 및 미세구조)

  • Chang-Sung Lim;Chang-Sam Kim;Deock-Soo Cheong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.238-246
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    • 1996
  • High-density SiC-AIN solid solutions were fabricated from powder mixtures of $\beta$-SiC and AIN by hot-pressing in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC (3C) powder transformed to the 2 H (wurzite) structure appeared to depend on the temperature and SiC/A1N ratio and seeds present. The crystalline phases consisted of a SiC-rich solid-solution phase and an A1N-rich solid-solution phase. At $2030^{\circ}C$ for 1 h, for a composition of 50 % AIN/50 % SiC with a seeding of $\alpha$-SiC, the complete solid solution could be obtained and the microstructures are equiaxed with a relatively homogeneous grain size of 2 H phases. The variation of the seeding of $\alpha$-SiC in SIC-A1N solid solutions could be attributed to the transformation behaviour and differences in size and shape of the grains, as well as to other factors, such as grain size distributions, compositional inhomogeneity, and structural defects.

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Thermoelectric Properties of the Reaction Sintered n-type β-SiC (반응소결법으로 제조한 n형 β-SiC의 열전특성)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.3
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    • pp.29-34
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    • 2019
  • Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

Fabrication of Silicon Nitride Ceramics Using Semiconductor-Waste-Si Sludge (반도체 폐 Si 슬러지를 이용한 질화규소세라믹의 제조)

  • Lee, Byong-Taek;Yoo, Jung-Ho;Kim, Hai-Doo
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1170-1175
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    • 1999
  • The microstructures and mechanical properties of $Si_3N_4$ ceramics produced by nitridation and post-sintering using semiconductor-waste-Si sludge were investigated. Lots of microcracks were observed in the waste-Si powders which contained some amounts of amorphous $SiO_2$. The nitridation rate of waste-Si compacts showed lower value than that of commercial Si powder compacts. The nitridation rate was increased with increasing nitridation temperature and then the percent of nitridation at 1470$^{\circ}C$ showed 98%. The phases of $Si_3N_4$ in the reaction-bonded bodies were mixed with ${\alpha}$ and ${\beta}$-type, and small amounts of $Si_2N_2O$ phase while those after post-sintering were ${\beta}$-$Si_3N_4$ and ${\alpha}$-Sialon. The sample post-sintered at 1950$^{\circ}C$ showed the fracture toughness of 5.6 $^MPa{\cdot}m^{1/2}$ and the fracture strength of 497 MPa which were lower than those of sintered body using commercial Si powder possibly due to the formation of ${\alpha}$-Sialon phase.

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Preparation of bioactive materials by crystallization sintering (결정화 소결에 의한 생체활성재료의 제조)

  • 명중재;이안배;정용선;신건철;김호건
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.1
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    • pp.169-178
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    • 1998
  • The crystal phases precipitated in various compositions glass of CaO-$SiO_2-P_2O_5$ system, were identified by XRD. E composition (CaO 49.4, $SiO_2\;36.8,\;P_2O_5$ 8.8 wt%) glass in which both apatite(($Ca_{10}(PO_4)_6O$ and $\beta$-wollastonite($CaSiO_3$) crystals would precipitate by heating, was selected as an experimental composition to prepare the glass ceramics with high bending strength and good bioactivity to the living bone. Glass powders of E composition were unidirectionally crystallized at $1050^{\circ}$C in the temperature-gadient furnace and the resultant glass ceramics were characterized. Bending strength of the glass ceramics was also measured. To investigate the bond forming ability between the glass ceramics and living bone tissue, soaking test of glass ceramics in simulated body fluid was carried out. Densed glass ceramics composed of apatite and $\beta$-wollastonite crystal were prepared by unidirectional crystallization under the optimum conditions. (2 0 2) plane of $\beta$-wollastonite crystals tended to grow perpendicularly to the crystallization direction. Average bending strength of this glass ceramics was 186.9 MPa, higher than that of the glass ceramics prepared by isothermal (not directional) crystallization In soaking test, a thin layer of apatite crystallite was formed on surface of the glass ceramics in 3 days. Apatite crystals formed on the glass ceramics could be act a role to make the chemical bond between the glass ceramics and living bone tissue.

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