• Title/Summary/Keyword: ${\beta}$ plane

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Diffraction Corrections for Second Harmonic Beam Fields and Effects on the Nonlinearity Parameter Evaluation

  • Jeong, Hyunjo;Cho, Sungjong;Nam, Kiwoong;Lee, Janghyun
    • Journal of the Korean Society for Nondestructive Testing
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    • v.36 no.2
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    • pp.112-120
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    • 2016
  • The nonlinearity parameter is frequently measured as a sensitive indicator in damaged material characterization or tissue harmonic imaging. Several previous studies have employed the plane wave solution, and ignored the effects of beam diffraction when measuring the non-linearity parameter ${\beta}$. This paper presents a multi-Gaussian beam approach to explicitly derive diffraction corrections for fundamental and second harmonics under quasilinear and paraxial approximation. Their effects on the nonlinearity parameter estimation demonstrate complicated dependence of ${\beta}$ on the transmitter-receiver geometries, frequency, and propagation distance. The diffraction effects on the non-linearity parameter estimation are important even in the nearfield region. Experiments are performed to show that improved ${\beta}$ values can be obtained by considering the diffraction effects.

Nitrogen Adsorption on the Stepped Planes of Tungsten: I.(210) Plane (텅스텐 결정면의 질소 흡착에 관한 연구 : I. (210)면)

  • 최대선;한종훈;백선목;박노길;김기석;김기석;황정남
    • Journal of the Korean Vacuum Society
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    • v.4 no.4
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    • pp.358-366
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    • 1995
  • W(210)면의 질소 흡착에 의한 일함수의 변화, heat of desorption 및 흡착 site에 대하여 조사하였다. 텅스텐(210)면에 질소가 흡착될 때 흡착율에 따라 일함수는 증가하다가 최대 변화량 0.29eV에서 포화되었다. TDS결과로부터 이 면은 진소에 대하여 적어도 3개의 흡착 site가 있음을 알았고 high dose에서 흡착되는 $\beta$1 state까지 포함하면 모두 4개의 흡착 site 가 있으며 이 흡착 site들 중 $\alpha$1 state를 제외하고는 모두 일함수를 증가시키는 site임을 알았다. 질소는 W(210)면의 step((100)면)과 terrace((110)면)의 중 step에 흡착되고 독립된, 즉 무한히 큰 W(100)면의 $\alpha$1, $\alpha$2, 그리고 $\beta$2 state에 대응되는 흡착 site에 흡착된 질소의 dipole moment의 방향은 W(210)면의 step((100)면의 일부)의 $\alpha$1, $\alpha$2, 그리고 $\beta$2 state에 대응되는 흡착 site에 흡착된 질소의 dipole moment의 방향과 반대방향임을 알았다.

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The Crystal and Molecular Structure of Z-3-P-Tolylthio-4-Nitro-3-Hexene (Z-3-파라-톨릴치오-4-니트로-3-헥센의 결정 및 분자구조)

  • An, Jung Tae;Gene B. Carpenter
    • Journal of the Korean Chemical Society
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    • v.34 no.2
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    • pp.130-135
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    • 1990
  • The title compound (C13H17NO2S) is monoclinic, space group P21/a, with a = 13.756 (3), b = 9.310(4), c = 21.305(3) $\AA$, $\beta$ = 95.0。, Z = 8, V = 2718.11 $\AA$3, Dc = 1.23$g·{\cdot}cm-3$, (Mo k$\alpha$) = 0.71069$\AA$,$\mu$ = 2.18 cm-1, F(000) = 1071.86, T = 298, R = 0.085 for 2935 unique observed reflections with I >2.0$\sigma$(I). The structure was solved by direct methods. The C-H bond lengths and the methyl groups are fixed and refined as their ideal geometry by allowing to ride on the parent atoms. Both molecules A and B have almost same structures except for two terminal ethyl groups. The ethylene-like skeleton including the nitro group in one molecule is nearly perpendicular to the plane of the methylbenzene group and two ethyl groups form a cis-type structure which has the dfferent orientations between two molecules; in the molecule A, two terminal methyl groups being the opposite directional arrangement against the plane of its skeleton, while in the B, with the same directional structure from its plane. The molecules in the crystal are packed together by non-bonded van der Waals forces.

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Development of an Enhanced 8-node Hybrid/Mixed Plane Stress Element : HQ8-14βElement (8절점 Hybrid/Mixed 평면응력요소)

  • Chun, Kyoung Sik;Park, Won Tae;Yhim, Sung Soon
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.26 no.2A
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    • pp.319-326
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    • 2006
  • A new enhanced 8-node hybrid/mixed plane stress elements based on assumed stress fields and modifed shape functions has been presented. The assumed stress fields are derived from the non-conforming displacement modes, which are less sensitive to geometric distortion. Explicit expression of shape functions is modifed so that it can represent any quadratic fields in Cartesian coordinates under the same condition as 9-node isoparametric element. The newly developed element has been designated as 'HQ8-$14{\beta}$'. The presented element is compared with existing elements to establish its accuracy and efficiency. Over a wide range of mesh distortions, the element presented here is found to be exceptionally accurate in predicting displacements.

Single crystal growth and structure analysis of superionic conductor ${\beta}-Ag_3SI$ (초이온도전체 ${\beta}-Ag_3SI$의 단결정 육성과 결정구조 해석)

  • Nam Woong Cho;Kwang Soo Yoo;Hyung Jin Jung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.1
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    • pp.63-70
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    • 1994
  • Single crystals of the superionic conductor ${\beta}-Ag_3SI$ were prepared by thermal treatmentr from the reactant mixture of AgI and $Ag_2S$. The growing single crystals were made to spherical shape of $200{mu}m$ in diameter. The detailed structures analyses revealed that $Ag^+$ in ${\beta}-Ag_3SI$ distribute on 12h site of 4-coordination inpreference to 3c site of 6-coordination. The effective one-particle potential (o.p.p.). of $Ag^+$ along [110] direction was evaluated from the probability density function(p.d.f.) Activation energy calculated from the o.p.p. curve has been found to be 0.012 eV for the diffusion of $Ag^+$ on (001) plane in the ${\beta}-Ag_3SI$ structure.

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Hydrogen Adsorption on the Stepped Planes of Tungsten : I. (210) Plane (Stepped 텅스텐 결정면의 수소 흡착에 관한 연구 : I.(210)면)

  • 최대선;한종훈;백선목;박노길;김기석;황정남
    • Journal of the Korean Vacuum Society
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    • v.4 no.2
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    • pp.142-149
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    • 1995
  • 본 연구에서는 새로운 장전자 방출법(DOFEC법)으로 W(210)면의 수소 흡착에 의한 일함수의 변화, heat of desorption에 대하여 연구하였다. 텅스텐(210)면에 수소가 흡착될 때 흡착율에 따라 일함수가 증가하다가 다시 감소하는데 이것은 수소가 처음에는(210)면의 step((100)면)에 흡착되고 dose를 증가시킴에 따라 terrace((110)면)에 흡착되기 때문임을 알았다. 즉, terrace보다 step의 sticking coefficient가 더 크며 zero coverage에서의 그 비는 2.57이며 이는 타 연구 결과와 잘 일치한다. (210)면의 step과 terrace의 수소 흡착에 대한 일함수의 정량적인 변화량 그리고 수소 dose량에 대한 각각의 면에 대한 상대적인 흡착율을 얻었으며, 이 결과는 독립된(110)면 또는 (100)면의 결과와 잘 일치됨을 알았다. 또한 이 결과는 흡착 실험에 있어서 dose량을 흡착률로 환산하는데 사용될 수 있다. 텅스텐(210)면에는 4개의 흡착 site가 존재하며 이 site들 중 $\beta$2과 $\beta$4 state는 second order 탈착 과정을 따르며 $\beta$1과 $\beta$3 state는 first order 탈착과정을 따른다. 따라서 텅스텐(210)면에는 수소가 해리적 흡착을 함과 동시에 비해리적 흡착도 함을 알았으며(210)면의 각 흡착 site를 이에 대응되는 (100)면과 (110)면의 흡착 site와 비교 검토하였다.

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A Study on Anisotropic Characteristics of Sedimentary Rocks(Taegu area) (퇴적암의 비등방 특성에 관한 연구(대구지역))

  • Kim, Yeong-Su;Heo, No-Yeong;Seo, In-Sik
    • Geotechnical Engineering
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    • v.14 no.4
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    • pp.5-16
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    • 1998
  • The ground of Taegu area consists mainly of shales with elastic sedimentary rocks. These shales have a nonhomogeneous and anisotropic characteristics. So their physical and mechanical properties are very different due to the angles($\beta$ value) of bedding planes of sedimentary rock. In this study, the physical and mechanical characteristics of shales in Taegu area are studied by performing all kinds of rock test. According to results of test, apparent specific gravity of shale decreases as the $\beta$ value increases. On the contrary, porosity and absorption increase. Elastic wave velocity shorts the highest value at the $90^{\circ}$. And Young's modulus shows the maximum value at the $30^{\circ}$. The uniaxial strength, triaxial strength, cohesion and angle of friction show the minimum value at the $60^{\circ}$respectively.

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A Study on the Surface Modification of Graphite by CVD SiC -Growth Characteristics of SiC in a Horizontal CVD Reactor- (화학증착 탄화규소에 의한 흑연의 표면개질 연구 -수평형 화학증착반응관에서 탄화규소 성장특성-)

  • 김동주;최두진;김영욱;박상환
    • Journal of the Korean Ceramic Society
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    • v.32 no.4
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    • pp.419-428
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    • 1995
  • Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

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Analysis of the Electromagnetic Scattering by a Resistive Strip Grating Tapered Resistivity On a Grounded Dielectric Plane -from Zeores at One Edge to Infinite at the Other Edge- (접지된 유전체층 위에 변하는 저항율을 갖는 저항띠 격자구조에서의 전자파산란 해석 -한쪽 모서리에서 0이고 다른쪽 모서리로 가면서 무한대로 변하는 경우-)

  • Yoon, Uei-Joong
    • The Journal of Information Technology
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    • v.8 no.2
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    • pp.77-84
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    • 2005
  • In this paper, electromagnetic scattering problems by a resistive strip grating with tapered resistivity on a grounded dielectric plane according to strip width and spacing, relative permittivity and thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the Fourier-Galerkin Moment Method known as a numerical procedure. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The resistivity of resistive strips in this paper varies from zeroes at one edge to infinite at the other edge, then the induced surface current density on the resistive strip is expanded in a series of Jacobi polynomials of the order ${\alpha}=0.2,\;{\beta}=-0.2$ as a orthogonal polynomials. The numerical results of the geometrically normalized reflected power in this paper are compared with those for the existing perfectly conducting strip. The numerical results of the normalized reflected power for conductive strips case with zero resistivity in this paper show in good agreement with those of existing papers.

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Nonlinear analysis of a 4-dof friction induced self-ocsillation system with the friction coefficient of velocity and pressure (속도와 압력의 항의 마찰상수를 갖는 마찰기인 4자유도계 자려진동 시스템의 비선형 해석)

  • Joe, Yong-Goo;Shin, Ki-Hong;Oh, Jae-Eung
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2002.11a
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    • pp.331.1-331
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    • 2002
  • Four degrees of freedom mathematical model is presented to describe the fundamental mechanisms of the disc brake squeal noise. A contact parameter is introduced to describe the coupling between the in-plane and the out-of-plane motions. The friction coeficient including "relative velocity" and ′normal force" can be generally formulated as the form of multiplication with polynominal parameters(${\beta}$, ${\gamma}$). (omitted)

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