• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.189-193
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• 2004

Pure and Sn or Pt doped $\alpha-Fe_2O_3$ thin films were prepared on $Al_2O_3$ substrates by RF-magnetron sputtering method and the sensitivities were compared. It was found that pure $\alpha-Fe_2O_3$ thin films did not exhibit much selectivity in CO and $i-C_4H_{10}$ gases while it showed the high sensitivity in proportion to the gas concentration of $C_2H_{5}OH$ gas. Pt-doped $\alpha-Fe_2O_3$ showed to be alike sensing properties as pure $\alpha-Fe_2O_3$ thin film in $C_2H_{5}OH$ gas. However, Sn-doped $\alpha-Fe_2O_3$ thin films exhibited the excellent sensitivity and selectivity in Hz gas. After microstructure modification by plasma etching on pure $\alpha-Fe_2O_3$ thin films, the gas sensing characteristics were dramatically changed.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.465-470
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• 1999

Sensing properties of $\alpha$-Fe2O3 thin film to reducing gases such as CHx and CO were systematically examined after deposition on Al2O3 substrate by PECVD(Plasma Enhanced Chemical Vapor Deposition)technique. Microstructure of deposited $\alpha$-Fe2O3 thin film showed the porous island structure. This specimen was annealed at 450, 550, $650^{\circ}C$ to enhance the gas sensing properties and investigated in terms of CO and C4H10 concentration from 500ppm to 3,000 ppm at operating temperature of 35$0^{\circ}C$ The gas sensitivity(%) to C4H10 measured at the operating temperature of 35$0^{\circ}C$ was 98.24 (highest sensitivity) 69.51 to CO and 2% to CH4 respectviely.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.280-285
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• 1999

$\alpha$-$Fe_2O_3$ thin film gas sensors were deposited at various temperature by CVD method. Polycrystalline $\alpha$-$Fe_2O_3$ thin films were deposited at $175^{\circ}C$ and $200^{\circ}C$. $\gamma$-$\alpha$-$Fe_2O_3$ phase was obtained when the deposition temperature was higher than $250^{\circ}C$. The crystallite size of $\alpha$-$Fe_2O_3$ was affected by the deposition and annealing temperature. The specimen deposited at $175^{\circ}C$ showed maximum sensitivity. In this condition, the sensitivity of $\alpha$-$Fe_2O_3$ thin film for NO gas (at 250 ppm) was 3.2 and response time (at 100ppm) was 12 second.

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1156-1162
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• 1999

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.79-85
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• 1997

Fe$_2$O$_3$ thin films were prepared on $Al_2$O$_3$ substrate by PECVD(Plasma-Enhanced Chemical Vapor Deposition) process. The phase transformation of iron oxide film was determined as the substrate temperature and reduction-oxidation process. $\alpha$-Fe$_2$O$_3$ was stable in deposition temperature ranges of 80~15$0^{\circ}C$. Fe$_3$O$_4$ phase was obtained by the reduction process of $\alpha$-Fe$_2$O$_3$ phase in H$_2$ ambient. Fe$_3$O$_4$ phase was transformed into a ${\gamma}$-Fe$_2$O$_3$ thin film under controlled oxidation conditions at 280~30$0^{\circ}C$.

• Journal of Magnetics
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• v.7 no.2
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• pp.51-54
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• 2002

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.499-502
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• 2000

In this study, $\alpha$-Fe$_2$O$_3$thin films were deposited on $Al_2$O$_3$substrate by RF magnetron sputtering method from a $\alpha$-Fe$_2$O$_3$target(99.9%). The sputtering atmosphere was Ar and 80%Ar:20%O$_2$mixture in a total gas pressure of 1~3mTorr. As-deposited $\alpha$-Fe$_2$O$_3$thin films were heated to 300, 400, 500, $600^{\circ}C$ for 5hr in oxygen atmosphere. The structure and the morphology of $\alpha$-Fe$_2$O$_3$thin films were examined by scanning Electron microscopy(SEM) and the crystal structure was analyzed by X-Ray Diffractometer(XRD). The microstructure of the annealed $\alpha$-Fe$_2$O$_3$films exhibits rather gross particle and the grain size was less than 100nm. Since the grain size was very small, the gas sensitivity was expected to be improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.421-422
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• 2000

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.755-759
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• 2000

The influence of $O_2$partial presure on saturation magnetization, coercivity and effective permeability(0.5~100MHz) of as-deposited Fe-Sm-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The nanocrystalline Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film fabricated at $O_2$partial pressure of 5% exhibits the best magnetic softness with saturation magnetization of 18kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100MHz. $\alpha$-Fe grain size is decreased with increasing $O_2$partial pressure. In case of $O_2$partial pressure of 10%, it is observed that FeO compound is formed and soft magnetic properties are decreased. The electrical resistivity of Fe-Sm-O thin films were increased with increasing $O_2$partial pressure, the electrical resistivity of Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film with the best soft magnetic properties was 130 $\mu$$\Omega$cm. Therefore, It is assumed that the good soft magnetic properties of Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film results from high electrical resistivity and decreasing $\alpha$-Fe grain size due to precipitation of Sm-Oxide phase.