• Journal of Astronomy and Space Sciences
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• v.19 no.4
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• pp.263-272
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• 2002

A total of 616 observations (308 in B, 308 in V) to. V523 Cas was made on three nights from October 19 to 21 in 1999 using the 1.8m telescope with 2K CCD camera of the Bohyunsan Optical Astronomy Observatory of KAO. With our data we constructed the BV light curves and determined 4 times of minimum light. We also obtained physical parameters of the system by combined analysis of both light and radial velocity curves using the Wilson-Devinney code.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1167-1173
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• 2004

This paper reports the variations of varistor voltage, nonlinear exponent, leakage current, and dissipation factor against surge stress of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$(ZPCCE)-based varistors manufactured with the variations of sintering temperature. It was found that the variations of electrical parameters against surge stressing current of 100 A/$\textrm{cm}^2$(8x20 ${\mu}\textrm{s}$) is not so large under the surge stress of 700 times. Among varistors, specially the varistor sintered at 134$0^{\circ}C$ exhibited the smallest variations, with %$\Delta$ $V_{lmA}$=+0.23%, %$\Delta$$\alpha$=+0.23%, %$\Delta$ $I_{L}$=0%, %$\Delta$tan$\delta$=-6.94%. The clamping voltage ratio( $V_{c}$/ $V_{lmA}$) of all varistors was less than 2.2.2.2.2.2.2.

• Journal of Astronomy and Space Sciences
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• v.32 no.3
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• pp.257-268
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• 2015

Characteristics of delta-V requirements for deploying an impactor from a mother-ship at different orbital altitudes are analyzed in order to prepare for a future lunar CubeSat impactor mission. A mother-ship is assumed to be orbiting the moon with a circular orbit at a 90 deg inclination and having 50, 100, 150, 200 km altitudes. Critical design parameters that are directly related to the success of the impactor mission are also analyzed including deploy directions, CubeSat flight time, impact velocity, and associated impact angles. Based on derived delta-V requirements, required thruster burn time and fuel mass are analyzed by adapting four different miniaturized commercial onboard thrusters currently developed for CubeSat applications. As a result, CubeSat impact trajectories as well as thruster burn characteristics deployed at different orbital altitudes are found to satisfy the mission objectives. It is concluded that thrust burn time should considered as the more critical design parameter than the required fuel mass when deducing the onboard propulsion system requirements. Results provided through this work will be helpful in further detailed system definition and design activities for future lunar missions with a CubeSat-based payload.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.142-145
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• 2004

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. studied effect for impurities and water for semiconductive shied through a dielectric properties experiment to estimate performance of insulating material in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 52/42 pF and $7.4{\times}10^{-4}$, $2.1510^{-4}$, respectively. In these results, the trend was increased with the increase of temperature. The $tan{\delta}$ of XLPE/semiconductive layer and XLPE/water/semiconductive layer were increased as compared with that of XLPE. dielectric properties reliability of $tan{\delta}$ was small.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1085-1091
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• 2006

The microstructure, electrical properties, and its stability of (Pr, Co, Cr, La)-doped ZnO varistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperature increased, the sintered density increased from 5.50 to $5.77g/cm^3$, the varistor voltage decreased from 777.9 to 108.0 V/mm, the nonlinear coefficient decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor concentration increased from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The stability of nonlinear electrical properties was obtained from sintering temperature of $1260^{\circ}C$. The varistors sintered at $1260^{\circ}C$ marked the high electrical stability, with $%{\Delta}V_{1mA}=+1.9%,\;%{\Delta}a=10.6%,\;and\;%{\Delta}I_L=+20%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24h$.

• Bulletin of the Korean Mathematical Society
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• v.55 no.5
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• pp.1441-1462
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• 2018

In this paper, we investigate the fractional p&q-Kirchhoff type system $$\{M_1([u]^p_{s,p})(-{\Delta})^s_pu+V_1(x){\mid}u{\mid}^{p-2}u\\{\hfill{10}}={\ell}k^{-1}F_u(x,\;u,\;v)+{\lambda}{\alpha}(x){\mid}u{\mid}^{m-2}u,\;x{\in}{\Omega}\\M_2([u]^q_{s,q})(-{\Delta})^s_qv+V_2(x){\mid}v{\mid}^{q-2}v\\{\hfill{10}}={\ell}k^{-1}F_v(x,u,v)+{\mu}{\alpha}(x){\mid}v{\mid}^{m-2}v,\;x{\in}{\Omega},\\u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}{\subset}{\mathbb{R}}^N$ is an unbounded domain with smooth boundary ${\partial}{\Omega}$, and $0<s<1<p{\leq}q$ and sq < N, ${\lambda},{\mu}>0$, $1<m{\leq}k<p^*_s$, ${\ell}{\in}R$, while $[u]^t_{s,t}$ denotes the Gagliardo semi-norm given in (1.2) below. $V_1(x)$, $V_2(x)$, $a(x):{\mathbb{R}}^N{\rightarrow}(0,\;{\infty})$ are three positive weights, $M_1$, $M_2$ are continuous and positive functions in ${\mathbb{R}}^+$. Using variational methods, we prove existence of infinitely many high-energy solutions for the above system.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of IKEEE
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• v.17 no.3
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• pp.234-240
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• 2013

This paper presents an incremental delta-sigma analog-to-digital converter (ADC) for a single-electrode capacitive touch sensor. The second-order cascade of integrators with distributed feedback (CIFB) delta-sigma modulator with 1-bit quantization was fabricated by a $0.18-{\mu}m$ CMOS process. In order to achieve a wide input range in this incremental delta-sigma analog-to-digital converter, the shielding signal and the digitally controlled offset capacitors are used in front of a converter. This circuit operated at a supply voltage of 2.6 V to 3.7 V, and is suitable for single-electrode capacitive touch sensor for ${\pm}10-pF$ input range with sub-fF resolution.

• Journal of the Korean Chemical Society
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• v.32 no.3
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• pp.203-210
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• 1988

Mono-oxo-bridged binuclear molybdenum(V) complex, $[Mo_2O_3(Phen)_2(NCS)_4]$ produces di-oxo-bridged binuclear molybdenum(V) complex, $[Mo_2O_4(Phen)_2(NCS)_2]$ in water + co-solvent, where the co-solvent are acetone, acetonitrile and N,N-dimethylformamide. The rate of conversion of $[Mo_2O_3(Phen)_2(NCS)_4]\;into\;[Mo_2O_4(Phen)_2(NCS)_2]$ has been measured by spectrophotometric method. Temperature was $10^{\circ}C$ to $40^{\circ}C$ and pressure was varied up to 1500 bar. The rate constants are increased with increasing water mole fraction and decreased with increasing concentration of hydrogen ion. The order of oxygen ring formation reaction rate in various cosolvent is as follows, ACT > AN > DMF which is agreed with solvent dielectric constants. The observed negative activation entropy ($[\Delta}S^{\neq}$), activation volume($[\Delta}V^{\neq}$) and activation compressibility coefficient(${\Delta}{\beta}^{\neq}$) values show that the solvent water molecule is strongly attracted to the complex at transition state. From these results, the oxygen ring formation reaction of $[Mo_2O_3(Phen)_2(NCS)_4]$ is believed association mechanism.

• Journal of the Korean Chemical Society
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• v.47 no.2
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• pp.121-126
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• 2003

Tris(2-cyclohexylaminoethyl)amine (L) was synthesized by the Schiff base condensation reaction of tris(2-aminoethyl)amine with cyclohexanone, followed by reduction. The thermodynamic characteristics, mole ratio and formation constant of [Zn(II)-L] complex were measured by the cyclic voltammetry and isothermal titration. In the case of Zn(II), well-defined cathodic and anodic peak were obtained at -1.02V and -0.48V vs Ag/AgCl , respectively. For the [Zn(II)-L] complex, both peaks were obtained at -1.19V and -0.45V vs Ag/AgCl, respectively. In addition, the peak height gradually increases as the scan rate increases, suggesting that the currents obtained were diffusion - controlled. The mole ratio and stability constant of the complex measured cyclic voltammerty were 1:1 and logK$_f$= 5.8, respectively. And the mole ratio and stability constant of the complexe calculated by isothermal titration method was 1:1 and logK =5.4, respectively. ${\Delta}$H, ${\Delta}$G and T${\Delta}$S for the complex formation were -53.0 kJ/mol, -31.1 kJ/mol, and -21.9 J/K at 25 ${\circ}$C, respectively.