• Earthquakes and Structures
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• 제12권2호
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• pp.237-250
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• 2017

There has been increasing attention in many countries on seismic retrofit of old fashioned RC structures in recent years. In such buildings, the joints lack transverse reinforcement and suffer inadequate seismic dimensional requirements and the reinforcement is plain bar. The behavior of the joints is governed by sliding of steel bars and diagonal shear failure is less influential. Different methods to retrofit beam-column joints have been proposed in the literature such as wrapping the joint by FRP sheets, enlargement of the beam-column joint, and strengthening the joint by steel sheets. In this study, an enlargement technique that uses external prestressed cross ties with steel angles is examined. The technique has already been used for substructures reinforced by deformed bars and has advantages such as efficient enhancement of seismic capacity and lack of damage to the joint. Three reference specimens and two retrofitted units are tested under increasing lateral cyclic load in combination with two levels of axial load. The reference specimens showed relatively low shear strength of 0.150${\surd}$($f_c$) and 0.30${\surd}$($f_c$) for the exterior and interior joints, respectively. In addition, relatively brittle behavior was observed and large deformations extended into the panel zone of the joints. The retrofit method has increased ductility ratio of the interior beam-column joints by 63%, and energy dissipation capacity by 77%, relative to the control specimen; For external joints, these values were 11%, and 94%. The retrofit method has successfully relocated the plastic joints far from the column face. The retrofit method has improved shear strength of the joints by less than 10%.

• Journal of Radiation Protection and Research
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• 제32권4호
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• pp.178-183
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• 2007

중성자선은 고 LET (linear energy transfer) 방사선으로 X선이나 감마선 등의 저 LET 방사선보다 세포에 더욱 큰 손상을 입힌다. 중성자에 의한 손상은 일반적으로 세포에 있어서 치명적이며, 중성자선은 X선이나 감마선에 비하여 직접작용을 통하여 세포사를 일으키는 경향이 있다. 본 연구에서는 고속중성자선의 성장지연비 및 산소증강비를 동물실험을 통하여 측정하고자 하였다. BALB-c 마우스의 우측 하지에 EMT-6 세포주를 이식한 후 종양의 평균용적이 $200-300mm^3$가 되었을 때 X선 및 고속중성자선을 조사하였다. 정상산소환경 및 저산소환경의 종양에 대하여 X선은 0, 11, 15.4 Gy를 조사하였고 고속중성자선은 0, 5, 7, Gy를 조사하였다. 방사선조사 후에는 종양의 용적을 주 3회 측정하였다. 정상산소환경 실험군의 경우 저산소환경 실험군에 비하여 X선 11 Gy를 조사하였을 때 성장지연비가 1.34였고, 15.4 Gy를 조사하였을 때 1.33였다. 고속중성자선을 조사한 경우정상산소환경 실험군이 저산소환경 실험군에 비하여 고속중성자선 5 Gy를 조사하였을 때 성장지연비는 0.94였고, 고속중성자선 7 Gy를 조사하였을 때 0.98였다. 고속중성자선의 산소증강비는 0.97이었다. 고속중성자선은 X선에 비하여 저산소환경에 있는 종양의 성장억제에 있어서 보다 효과적이었다.

• Journal of Radiation Protection and Research
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• 제45권1호
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• pp.11-15
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• 2020

Background: There have been various studies to investigate the mechanisms of DNA damage from low-energy electrons. To understand the mechanism of these strand breaks, it is necessary to investigate the dissociation mechanism of the DNA constituents, that is, bases, sugars, and phosphates. Materials and Methods: We studied the dissociation of thymine base upon interaction with low-energy electrons. For this experiment, thymine powder was pressed onto the indium base and irradiated by 5 eV electrons. Results and Discussion: Non-irradiated and irradiated thymine samples were compared and analyzed using the X-ray photoelectron spectroscopic technique to analyze the dissociation patterns of the molecular bonds after low-energy electron irradiation of thymine. Conclusion: With 5 eV electron irradiation, C-C and N-C = O bonds are the primary dissociations that occur in thymine molecules.

• 한국식품영양과학회지
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• 제42권11호
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• pp.1857-1863
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• 2013

전자선 조사된 마늘분말을 혼합하여 불고기소스를 제조한 후 살균처리($85^{\circ}C$, 30 min)와 혼합비(1, 3, 5%)에 따른 열발광(thermoluminescence, TL)특성을 서로 다른 연구기관에서 확인하였다. 비 조사 마늘분말이 혼합된 소스의 TL 발광곡선은 자연방사선에 의해 $300^{\circ}C$ 이후에서 나타났다. 그러나 조사원료(1 kGy, 10 kGy)가 혼합된 소스의 경우 $150{\sim}250^{\circ}C$에서 나타났으며, 원료의 혼합량 및 조사선량이 낮을수록 발광곡선의 강도는 감소하였다. TL ratio($TL_1/TL_2$)는 조사 원료가 혼합된 시료구에서도 모두 0.1 이하로 나타나 조사여부 판정은 어려웠으며, 살균 처리 후에는 발광강도는 감소하고 발광온도범위는 고온영역으로 이동하여 낮은 혼합시료(1 kGy 조사 마늘분말, 1%)에서는 판별이 어려운 것으로 확인되었다. 조사 원료가 소량 혼입된 가공식품의 판별 시에는 TL 발광곡선의 형태와 최대 발광온도를 복합적으로 고려하여 조사여부를 확인하여야 할 것으로 판단되었다.

• 대한전기학회논문지:시스템및제어부문D
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• 제54권11호
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• pp.654-659
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• 2005

An improved power supply for APD(Avalanche Photo Diode) with a received optical power monitoring circuit allows the received optical power increase temporary without of the degradation of the electrical signal. For the cost reduction and simple fabrication, an improved power supply has been proposed that it was designed for driving a APD as a receiving device of a wireless optical transmission system. It was demonstrated that it was possible to improve a dynamic range by compensating the temperature coefficient of the APD up to 1.0 V/$^{\circ}C$ through the power supply. Also, for an efficient transmission at the receiver end, a simple structure of a single cylindrical micro-lens configuration was used in conjunction with the laser diode to partially compensate a laser beam ellipticity. For this purpose, an astigmatism introduced by the micro-lens is utilized for the additional compensation of the beam ellipticity at the receiver end. In this paper, it is demonstrated that an efficient beam shaping is realized by using the proposed configuration consisting of the single lens attached to the laser diode.

• 비파괴검사학회지
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• 제4권1호
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• pp.11-22
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• 1984

In the straight beam inspection of ultrasonic wave, the method for evaluating flaw size by AVG diagram is useful as a method for the quantitative evaluation of results of ultrasonic flaw detection. This study was carried out the measure the size of circular flat flaw with the inclination by straight beam inspection and could be decreased the error of application due to the inclination of flaw by AVG diagram in consideration of correction coefficient. From the result of the experiment, the error by means of the application of experimental values to AVG diagram was increased as the inclination angle grows. Also, it n s increased the error of application as the detecting frequency and diameter of flaw grows in the same inclination angle. In case of diameter of flaw 6mm, AVG diagram could be applied to the inclination angle $3^{\circ}$ for 5 MHz, $7^{\circ}$ for 2.25 MHz, $15^{\circ}C$ for 1 MHz in the range of 20% error and the theory was concided with the experiment to $5^{\circ}C$ for 5 MHz, $10^{\circ}C$ for 2.25 MHz, $15^{\circ}C$ for 1 MHz in the range of 10% error by correction eq. (45) due to the inclination angle. Therefore, it is considered that the results obtained from this study will be somewhat helpful informations for the size evaluation of circular flat flaw with the inclination.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.734-739
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• 2017

We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.

• 한국재료학회지
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• 제22권10호
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.33-36
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• 2010

$MgF_2$ is a current material used for optical applications in the ultraviolet and deep ultraviolet range. Process variables for manufacturing $MgF_2$ thin film were established in order to clarify the optimum conditions for the growth of the thin film, dependant upon the process conditions, and then by changing a number of the vapor deposition conditions, substrate temperatures, and heat treatment conditions, the structural and optical characteristics were measured. Then, optimum process variables were thus derived. Nevertheless, modern applications still require improvement in the optical and structural quality of the deposited layers. In the present work, in order to understand the composition and microstructure of $MgF_2$, single layers grown on a slide glass substrate using an Electron beam Evaporator (KV-660), were analyzed and compared. The surface substrate temperature, having an effect on the quality of the thin film, was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$. The heat treatment temperature, which also has an effect on the thin film, was changed from $200^{\circ}C$ to $400^{\circ}C$ at intervals of $50^{\circ}C$. The physical properties of the thin film were investigated at various fabrication conditions, such as the substrate temperature, the heat treatment temperature, and the heat treatment time, by X-ray diffraction, and field emission-scanning electron microscopy.

• 전자공학회논문지A
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• 제33A권11호
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• pp.105-111
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• 1996

We have invetigated the characteristics of thermal instability of Co-silicides annealed at 850$^{\circ}$C ~ 1000$^{\circ}$C for 10~90 minutes in a furance with N$_{2}$ ambient. In our experiments, Co-silicides and Co/Ti bilayer silicides were formed by depositing (Co, Ti) films on the clean Si substrates in an E-beam evaporator and performing the RTA annelaing. The sheet resistances of Co-silicides formed form Co exhibited the nearly constant value under the post-annealing time above 900$^{\circ}$C showing the increase of 30% and 60% under the conditions annealed at 900$^{\circ}$C and 1000$^{\circ}$C for 30minutes. On the other hand, there were no remarkable changes in the sheet resistance sof Co-silicides formed form Co/Ti bilayer under the post-annealing conditons below 1000$^{\circ}$C.