• Korean Journal of Materials Research
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• v.9 no.5
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• pp.484-490
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• 1999

$(Pb,La)TiO_3$(PLT) thin films were prepared on Pt/SiO$_2$/Si substrates by the sol-gel method and investigated the crystalline and electrical properties according to La concentration and post-annealing temperatures. The PLT films annealed at above $600^{\circ}C$ were exhibited the typical perovskite structures regardless of La contents. When the $(Pb,La)TiO_3$(PT) films were doped with La concentration up to 10mol%(PLT-10), the degree of z-axis orientation was greatly decreased from 63% to 26%. From AES depth profiles for the PLT-10 samples, no remarkable inter-reaction between PLT film and lower Pt electrode was found. The remanent polarization$(2Pr,Pr_+-Pr_-)$ were increased from $4\muC\textrm{cm}^2 to 16\muC\textrm{cm}^2$ as the annealing temperature increased from $600^{\circ}C to 700^{\circ}C$. This result may be ascribed to the improvement of crystallinity by the high temperature post-annealing. The dielectric constant$({\varepsilon}r)$ and tangent loss(tan$\delta$) of the PLT-10 films annealed at $650^{\circ}C$ were about 193 and 0.02, respectively with the pyroelectric coefficient($\gamma$) of around $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C at 30^{\circ}C$.

• The Journal of Korean Medicine
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• v.23 no.4
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• pp.45-54
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• 2002

Objectives: In order to investigate the relationship of Radix Trichosanthis components and the melanin synthesis, the author has analyzed the cell viability and tyrosinase activity, melanin content and morphologic changes in n-hexane, EtOAc, n-BuOH, and H2O fraction. Methods: At first, in order to determine the concentration of the Radix Trichosanthis component, the author investigated the viability of B16 melanoma cell. To measure the effects of Trichosanthes kirilowii extracts (n-BuOH, n-Hexane, EtOAc, H2O fractions) on the viability of A549 cells, A549 cells were treated with various concentrations (from 0.5 to $25{\;}\mu\textrm{g}/ml$) of components of Trichosanthes kirilowii. After 24hrs, the cell viability was measured by MTT assay. The EtOAc components of Trichosanthes kirilowii decreased the viability of A549 cells in a dose-dependent manner. H2O and n-BuOH components had no cell toxicity till $25{\;}\mu\textrm{g}/ml$, the n-hexane component showed minor cell toxicity at $25{\;}\mu\textrm{g}/ml$ and the EtOAc component cell toxicity was revealed at $5{\;}\mu\textrm{g}/ml$ concentration. Results: 1. The results of tyrosinase activity and the Radix Trichosanthis component; n-hexane and EtOAc components controlled it effectively; the n-BuOH components were less effective. 2. The results of melanin content analysis showed that the n-hexane and EtOAc components effectively inhibited, the n-BuOH fraction inhibited less, and H2O component didn't inhibit the terminal melanin formation. 3. In the n-BuOH and H2O component there were no changes, but in the n-hexane component the melanin content was effectively inhibited. 4. In the EtOAc fraction, although the melanin content was inhibited, the cell count was evidently suppressed, Of all of the Radix Trichosanthis components, the n-Hexane and EtOAc fractions inhibited the melanin synthesis best, but owing to its toxicity, the EtOAc components inhibited the cell count. Conclusion: The above results demonstrated that Radix Trichosanthis n-hexane fraction efficiently inhibited the tyrosinase activity and melanin synthesis.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.107-118
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• 1992

Alumina supports for TiO2 ultrafiltration membrane coating were prepared by presintering disk-type preforms at 140$0^{\circ}C$. These supports showed uniform microstructures which had the apparent porosity of 40%, the pore size distribution in the range of 0.1~0.5${\mu}{\textrm}{m}$, and the water flux of 1400ι/$m^2$.h at the pressure difference of 10 atm. The optimum pH and concentration of the TiO2 sol for coating were 0.8 and 1.0 wt%, respectively, and sol particles were identified as rutile forms of 20 nm size. Crack-free alumina-supported rutile TiO2 membranes could be prepared through well controlled drying and heating the gel layer coated by the sol-gel dipping. The pore size of the TiO2 membranes heat-treated at 50$0^{\circ}C$ for 2 hrs was 30~80$\AA$, and their thickness varied from 1.1 to 3.8 ${\mu}{\textrm}{m}$ in accordence with the dipping time (4~40 min). The flux of water through this composite membrane at 10 atm was found to be in the range from 800 to 1100ι/$m^2$.hr depending on the dipping time (10~40 min). The membrane thickness increased linearly with the square root of the dipping time and the slope was 0.62 ${\mu}{\textrm}{m}$/{{{{ SQRT { min} }}.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.60-66
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• 1995

Abstract The experimental results which is the aerosols behavior and distribution of atomized zinc nitrate ($Zn(NO_3)_2$) solution (0.5 M) by ultrasonic vibrator were in accord with the computer simulations. i.e., most aerosols passing through the reactor (hot zone) moved toward the center of reactor by thermophoresis as the axis of reactor increase. Also, the distribution of aerosols concentration was high at the center of reactor as the axis increase. Among the synthesized ZnO particles, shell-like aggregates of fracture type which could not see at the center of reactor were observed at near the wall of reactor, and the particle size ($ 1.2 {\mu\textrm{m}$) of near the wall was larger than that ($0.9 {\mu\textrm{m}$) of the center.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.753-759
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• 1999

The microstructure and electrical properties of ZNR that W $O_3$ is added in the range 0.5~4.0mol%, were investigated. The major part of W $O_3$ were segregated at the nodal point and W-rich phase was formed. Three crystalline phases, such as W-rich phase (W $O_3$), Bi-rich phase (B $i_2$W $O_{6}$ ), and spinel phase (Z $n_{2.33}$S $b_{0.67}$ $O_4$) were confirmed to be co-existed at the nodal point The average grain size increased in the range 15.5~29.9$\mu\textrm{m}$ with increasing W $O_3$ additive content. Consequently. W $O_3$ acted as a promotion additive of grain growth. As the W $O_3$ additive content increases. the varistor voltage and the nonlinear exponent decreased in the range 186.82~35.87V/mm and 20.90~3.34, respectively, and the leakage current increased in the range of 22.39~83.01 uh. With increasing W $O_3$ additive content, the barrier height and the density of interface states decreased in the range 1.93~0.43eV and (4.38~1.22)$\times$10$^{12}$ $\textrm{cm}^2$, respectively. W $O_3$ acted as an acceptor additive due to the donor concentration increasing in the range (1.06~0.38)$\times$10$^{18}$ /㎤with increasing W $O_3$ additive content.t.t.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.872-877
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• 1999

The purpose of this research was to investigate the characteristics and the cleaning efficiency on HN(sub)4OH solutions added with H(sub)2O(sub)2 and surfactants. NH(sub)4OH solutions added with surfactants did not show much changes in pH and redox potential (Eh) as a function of NH(sub)4OH concentration compared with NH(sub)4OH solution. However H(sub)2O(sub)2 added NH\ulcornerOH solutions showed the decrease of pH and the increase of Eh as the concentration of NH(sub)4OH increased. The decrease of surface tension from 72 dynes/cm to 38 dynes/cm was observed in solutions added with surfactant but not in H(sub)2O(sub)2. The etch rates of silicon in NH(sub)4OH solutions(NH(sub)4OH:H(sub)2O= 1 : 5) showed at least 50 times higher than those in H(sub)2O(sub)2 and surfactant added NH(sub)4OH solutions(NH(sub)4OH:H(sub)2O(sub)2= 1 : 1 : 5) solution removed the PSL particles (0.67$\mu\textrm{m}$ in diameter) on Si wafers effectively at all temperatures investigated. NH(sub)4OH solution added with a surfactant could not remove particles at room temperature, however it was possible to remove particles at higher temperatures, 5$0^{\circ}C$ and 8$0^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.664-670
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• 2002

The electrical characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3$(ZPCCY)-based varistors were investigated with $Y_2O_3$ content in the range of 0.0~4.0 mol%. As $Y_2O_3$ content is increased, the average grain size was markedly decreased in the range of 18.6~3.2 $\mu m$ and the density of the ceramic was decreased in the range of 5.53 ~3.74 $g/\textrm{cm}^3$. While, the varistor voltage was increased in the range of 39.4~748.1 V/mm and the nonlinear exponent was in the range of 4.5~51.2 with increasing $Y_2O_3$ content. The addition of $Y_2O_3$ greatly enhanced the nonlinear properties of varistors, compared with the varistor without $Y_2O_3$. In particular, the varistors with $Y_2O_3$content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 51.2 and the leakage current is 1.3 $\mu A$. The donor concentration and the density of interface states were decreased in the range of (4.19~0.14) $\times$10$^{18}$ /㎤ and (5.38~1.15)${\times}10^{18}/\textrm{cm}^3$, respectively, with increasing $Y_2O_3$ content.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.943-948
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• 2003

The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1459-1466
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• 1994

A novel technique for determining the oxygen tracer diffusion coefficients in oxides was developed. After the 16O-18O solid-gas exchange reactions between 16O in the oxides and 18O in the ambient gas, Raman spectra of the cross sections of oxide samples were measured in a spatial resolution of 5 ${\mu}{\textrm}{m}$. From thus obtained Raman spectra, depth profiles of 18O concentration in the oxide samples were calculated. The oxygen tracer diffusion coefficients and the surface exchange coefficients were determined under the assumptions that samples are semi-infinite slab and that the surface exchange reactionsare not negligible. The oxygen tracer diffusion coefficient of 2.8 mol% Y2O3-containing tetragonal ZrO2 polycrystals, 8 mol% Y2O3-containing ZrO2 polycrystals, and 10 mol% Y2O3-containing cubic ZrO2 single crystals (along the a axis) are as follows.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.645-650
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• 2003

The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.