• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.194-200
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• 2003

In this paper, FSK(Frequency Shift Keying) demodulator which is widely used for FH-SS system is designed and the experimental results are analyzed. The performance of the ADPLL(All-digital Phase-Locked-Loop), which is the main part of the demodulator circuit, is analyzed by the computer program. Using Maxplus-II tool provided by altera. co., ltd, each part of the ADPLL is designed and all of them is integrated into EPM7064SLC44-10 chip. And the simulation results are compared with the characteristics of the implemented circuits for analysis. There is about 2${\mu}\textrm{s}$ difference in time constant of the PLL. This difference is not critical in the demodulator. And the experimental results show that the transmitted data is well demodulated when the phase difference between the FSK modulated signal and the reference signal is about 180 degree.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.69-75
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• 1997

Thin films of $Si0_2(1000{\AA})/CoNiCr(400{\AA})/Cr$ were fabricated as a function of Cr thickness by KF magnetron sputtering. The saturation magnetization, coercive force and squareness with annealing temperature for these films were investigated. The values of saturation magnetization of $SiO_2/CoNiCr/Cr$ thin films decreased as the thickness of Cr underlayer increased, whereas coercive force increased as the thickness of Cr underlayer increased. The value of Ms was 600 emu/cc and the maximum value of Hc was 550 Oe. Especially, the value of saturation magnetization was rapidly decreased $SiO_2/CoNiCr/Cr(1700{\AA})$ thin films as the annealing temperature increased And the coercive force increased as the annealing temperature increased When annealing temperature was $650^{\circ}C$, the Ms was reduced to 90 % of the as-deposited film. And the Hc was showed maximum 1600 Oe. It was thought that Cr diffusion into CoNiCr layer reduced the magnetic moment of CoKiCr layer. In addition. Hc might he increased due to grain growth perpendicular to the film plane.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.459-465
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• 1993

By making the inter-metal PECVD $SiO_2$ as a Si rich oxide under the SOG, the hydrogen and water related diffusants could be captured a t SI dangling bonds. This gettering process was known to prevent the device characteristics degradations related to the H, $H_20$. The basic characteristics of Si rich oxide have been studied according to changing high/low frequency power and $SiH_4/N_2O$ gas flow ratio in PECVD. As increase in low frequency power, deposition rate decreased but K.I. and compressive stress increased. Decrease of the water peaks of FTIR spectra at the wave number range of 3300~3800$\textrm{cm}^{-1}$' also indicated that intensty the films were densified. As increase in SiH, gas flow rate, deposition rate, R.I. and etch rate increased while compressive stress decreased. F'TIK spectra showed that peak intensity corresponding to Si-0-Si stretching vibration decreased and shifted to the lower wave numbers. But AES showed that Si dangl~ng bonds were increased as a result of lower Si:O(l: 1.23) ratlo inthe Si rich oxide as compared to Si : O(1 : 1.98) ratio of usual oxide.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.38-43
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• 1997

For amorphous $Co_{1-x}Ti_x$(X=0.13, 0.16, 0.21 at.%) thin films deposited by DC magnetron sputtering method ferromagnetic resonance experiments have been used to investigate the dependence of surface magnetic properties according to annealing temperature (150~225 $^{\circ}C$). Spin wave resonance spectra for all annealing temperatures consist of several volume modes and one(or two) surface mode. It is suggested that both surfaces of the film have a perpendicular hard axis to the film plane(negative surface anisotropy). Also, the surface anisotropy $K_{s2}$ at substrate film interface is varied slowly from -0.11 to -0.25 erg/ $\textrm{cm}^2$ and the surface anisotropy $K_{s1}$ at film-air interface is varied from 0.16 to -0.53 erg/ $\textrm{cm}^2$ with increasing annealing temperature. We conjecture that the variation of surface anisotropy $K_{s1}$ is due to the increase of Co concentration resulted from Ti oxidation for low temperature annealing(150~200 $^{\circ}C$) and the diffusion of Co atoms near the film surfaces for high temperature annealing(225~250 $^{\circ}C$).

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2001.04a
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• pp.98-103
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• 2001

In order to understand the characteristics of leachate at the Seokdae municipal waste landfill in the Pusan city, the correlation between leachate pollution loading and volume of gas production. concentration of gas and subsidence of ground, the characteristical methos, geochemical analyses and laboratory column tests using samples of gases, leachate and surface soil of Seokdae waste landfill area. Through the analysis of water balance, leachate flow rate and pollution loading were estimated. Geistatistical analysis of four gas components ( $O_2$, C $H_4$, $H_2$S and CO) shows the possibility of ground subsidence around the group of a site with high concentration of gas. From geochemical analyses of leachate, EC and Total-Alkalinity of ground subsidence around the group of a site with high concentration of gas. From geochemical analysis of leachate, Ec and Total-Alkalinity were increased, and Cl, Cr, Mn, Cu, Zn, Cd and Pb were decreassed comparing to the part, and the type of water quality was Na-HC $O_3$ in trilinear diagram. It shows that biodecomposition of municipal wastes continues actively. From the analysis of water balance, the total leachate flow rate is about 465.11㎥/day and pure pollution loading of Cl, Mn and Fe are estimated to 223.8kg/day, 0.2kg/day, 0.3kg/day, respectively. The laboratory column test of residual soil and landfill soil shows 0.206cm and 0.019cm for linear velocity(equation omitted), 0.234 $\textrm{cm}^2$/min and 0.018$\textrm{cm}^2$/min for diffusion coefficient ( $D_{ι}$), and 1.136cm and 0.095cm longitudinal dispersion index ($\alpha$$_{ι}$), respective]y. It demonstrates that the delay time of contamination for residual soil is shorter than that of landfill soil.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.385-390
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• 1998

방사성 페이온교환수지 아스팔트고화체를 처분장 등지에서 장기간 저장시 안전성 확보를 위하여 물리적 강도가 높고 고화체내에서 방사성핵종의 침출저항성 및 처리시 감용의 효과가 우수한 고화체 연구가 필요하게 되었다. 실험에 사용된 이온교환수지는 입상형 양이온 교환수지를 대상으로 하였으며 고화매질로서는 도로포장용으로 생산되는 직류아스팔트 60/70을 사용하였다. 고화보조제는 방사성 고체패기물 포장시 사용되어 폐기물로 발생되는 페폴리에틸렌(폐PE) 필름을 사용하였다. 실험결과 고화체의 형태안정성은 PE 함유량이 10 wt% 이상일 때 고화체 형태를 그대로 유지할 수 있으며 압축강도는 414 kPa(60 psi) 이상을 나타내었다. 최적의 운전조건은 이온교환수지, PE 함유량이 건조기준으로 각각 30~50 wt%, 10~25 wt% 이며, 고화온도는 170~20$0^{\circ}C$이다. 고화체의 침출특성은 확산 (diffusion) 으로 해석이 가능하며, 유효확산계수(De)는 Cs, Co의 경우 각각 1.621$\times$$10^{-7}$, 1.186$\times$$10^{-9}$ $\textrm{cm}^2$/day로 나타나고, Leachablity index는 각각 11.7, 13.8로 미국 원자력위원회 (NRC)가 요구하는 기준값 6보다 훨씬 높게 나타났다.

• The Korean Journal of Ecology
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• v.3 no.1_2
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• pp.31-39
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• 1980

Light energy utilization was investigated in the fallen stems of Opuntia bigelovii. Threshold time for the decreasing steady state of acid accumulation in the palisade tissue of Opuntia stems was 4 hours under 1,000 $\mu Em^{-2}sec^{-1}$ of PAR at $75^{\circ}C$, while stomatal closing throughout the stem stage was illustrated by 256.0-310.4 sec $\textrm{cm}^{-1}$ of stem diffusive resistance and 0.20g $day^{-1}$ of the water loss rate as cuticular resistance. The acid loss rate in the stems per 4 hours was related to tissue water contents and a few acid loss rate could be recognized at the water content rage of 56.4%~46.8%. Endogenous oscillation of tissue acidity due to the diurnal rhythmic phenomena depended on the tissue water content was found in the Opuntia stems with stomatal closing during the normal day/night cycle. The survival rate of 1 segment to survive 2 years old cactus was 22.7% in desert environments. Such a compensation photosynthesis which utilizes light energy and maintains the reassimilation of endogenous gases was interpreted as conceptual model.

• Fire Science and Engineering
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• v.16 no.1
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• pp.18-23
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• 2002

Efficiency estimation of toxicity free resistance cable experiments were conducts to understand toxicity free fire ersistance polyolefin insulation material and smoke density characteristic and combustion gas corrosion analysis. A main cause of fire-growth and generating toxic gas when it burns, should be dealt with great care in life safety design. Similar patterned fire incidents such as, Inchon Live-Hof Pub Restaurant as, Sea-land Children Resort have proven that serious loss of lives were caused by hazardous gas generated fire resistance cable materials. In this paper, Referenced documents were ASTM E662 standard test method for specific Ds genalated by solid materials. The furnace control system shall maintain the required irradiance level under steady-state condition with the chamber door closed of 2.5$\pm40.04〔w/$\textrm{cm}^2$〕for 20 min. According to the results of the smoke density analysis of NFR-8 and FR-PVC the highest decomposition flaming smoke density range of NFR-8 and FR-PVC were 25.2 to 37.5 and 51.1 respectively. Nonflaming smoke density range of NFR-8 and FR-PVC were 100.4 to 112.2 and 126.5 to 398.8. Also, the fire gases was occurred carbon monoxide and decomposition than in polyolefin due to incomplete combustion of PVC which has high content of carbon in chemical compound.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.