• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.391-402
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• 1999

Characteristics of composite electrolytes which were prepared by coating a thin film of YSZ (yttria sta-bilized zirconia : (ZrO2)0.92 (Y2O3)0.08) on YDC (yttria doped ceria : Ce0.8Y0.2O1.9) with mixed conductivity have been investigated in order to develop the low-temperature solid oxide fuel cell. The thickness (t) of spin-coated YSZ thin films after the heat-treatment at 600$^{\circ}C$ was increased proportionally to the sol con-centrations (C) while the decrease in its thickness with the spin rate ($\omega$) could be expressed in the e-quation of ln t=9.49-0.53 ln $\omega$(0.99mol//s sol conc.) When the sol concentration and the spin rate being less than 0.99 mol/l and higher than 1000 rpm respectively reliable YSZ/YDC composite electrolytes could be obtained by multi-coating although several micro-cracks were observed in singly coated YSZ film surfaces. The dense YSZ film with a 1$\mu\textrm{m}$ thickness was prepared by coating of 0.99 mol/l YSZ sol five-times at 2000 rpm followed by heat-treatment at 1400$^{\circ}C$ for 2h, The adhesion between YSZ film and YDC substrate was found to be very good. The open circuit voltages of H2/O2 single cell with YSZ/YDC composite electrolytes were 0.79∼0.82 V at 800$^{\circ}C$ and 0.75∼0.77V at 900$^{\circ}C$ The open circuit voltage was inversely proportioned to the thickness ratio of YSZ thin film (1$\mu\textrm{m}$) to YDC substrate(0.28-2.22 mm)

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.439-446
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• 2011

Yttria stabilized zirconia (YSZ) coating was formed on AA1050 Al alloys by aerosol deposition (AD), and its electrochemical corrosion properties were investigated in 3.5 wt% NaCl and 0.5M $H_2SO_4$ solutions. The crack-free, dense, and ~5 ${\mu}m$ thick YSZ coating was successfully obtained by AD. The as-deposited coating was composed of cubic-YSZ nanocrystallites of ~10 nm size. The potentiodynamic test indicated that the YSZ coated Al alloy had much lower corrosion current densities (2 nA/$cm^2$) by comparison to uncoated sample and exhibited a passive behavior in anodic branch. Particularly, a pitting breakdown potential could not be identified in $H_2SO_4$. EIS tests revealed that the impedance of YSZ coated sample was ${\sim}10^6{\Omega}cm^2$ in NaCl and ${\sim}10^7{\Omega}cm^2$ in $H_2SO_4$, which was about 3 or 4 orders of magnitude higher than that of uncoated sample. Consequently, the corrosion resistance of Al alloy had been significantly enhanced by the YSZ coating.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.330-334
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• 2014

In this study, the Zn-Mg alloy coatings with various Mg contents were deposited using an unbalanced magnetron sputtering process. Their surface microstructure, chemical composition, phase, and corrosion property were investigated. The microstructure of the Zn-Mg coatings changed from porous microstructure to dense one with increasing Mg contents in the coatings. As Mg contents in coatings increased, intermetallic phases such as $Mg_2Zn_{11}$ and $MgZn_2$ were detected from X-ray diffraction (XRD) results. The corrosion resistance of the Zn-Mg alloy coatings was investigated quantitatively using electrochemical impedance spectroscopy (EIS) measurement with 3.5% NaCl solution. The results of EIS measurement showed that the charge transfer resistance and the phase angle of the Zn-Mg alloy coatings were increased from $162.1{\Omega}{\cdot}cm^2$ to $558.8{\Omega}{\cdot}cm^2$ and from about $40^{\circ}$ to $60^{\circ}$ with increasing Mg contents from 5.1 wt.% to 15.5 wt.% in the coatings. These results demonstrate that the Zn-Mg coatings with increasing Mg contents showed an enhanced corrosion resistance.

• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.4
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• pp.322-327
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• 2003

Giant magnetoresistance(GMR) NiO multilayer, which has been used to reading head of highly dense magnetic recording, was fabricated, and oxidized in an air during 80 days to study the dependence of magnetoresistance properties on residual stress in the interfaces. The magnetoresistance ratio and the exchange biasing $field(H_{ex})$ of $NiO(60nm)/Ni_{81}Fe_{19}(5nm)/Co(0.7nm)/Cu(2nm)/Co(0.7nm)/Ni_{81}Fe_{19}(7nm)$ spin valves were increased from 4.9% to 7.3%, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity ${\rho}$ decreased from $28{\mu}{\Omega}m$ to $17{\mu}{\Omega}m$, but ${\Delta}p$ did not almost change after the oxidation. Therefore, the increase of MR ratio is due to the decrease in the sheet resistivity. the reduced resistance may result from the increase in the reflection of conduction electrons at the oxidized top surface. Also, the increase in the exchange biasing field is originated from the reduction of residual stress at the interface of $NiO/Ni_{81}Fe_{19}$ according as the aging time increases.

• Journal of Integrative Natural Science
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• v.5 no.4
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• pp.237-240
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• 2012

In this study, PEDOT thin films polymerized with Iron(III)tosylate ($Fe(PTS)_3$) and grown on atomically smooth and highly dense 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM) surfaces by VPP method have been investigated. PEDOT thin films were synthesized on APS self-assembled $SiO_2$ wafer surface at two different concentrations (20 wt% and 40 wt%) and growth time (3 and 30 minutes), and then their sheet resistance were measured and compared. PEDOT thin films grown with 20 wt% $Fe(PTS)_3$ oxidant are highly conductive when compared with the film grown with 40 wt% $Fe(PTS)_3$, as ascertained by the measured sheet resistance values down to 0.06 ${\Omega}/cm$. It clearly suggests that 20 wt% is more effective oxidant concentration for VPP than 40 wt% even though the film grown with 40 wt% oxidant has better quality than the film with 20 wt% $Fe(PTS)_3$ does.

• Journal of Powder Materials
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• v.23 no.5
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• pp.358-363
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• 2016

Noncontact direct-printed conductive silver patterns with an enhanced electrical resistivity are fabricated using a silver ink with a mixture of silver nanoparticles and nanoplates. The microstructure and electrical resistivity of the silver pattern are systematically investigated as a function of the mixing ratio of the nanoparticles and nanoplates. The pattern, which is fabricated using a mixture with a mixing ratio of 3(nanoparticles):7(nanoplates) and sintered at $200^{\circ}C$ shows a highly dense and well-sintered microstructure and has a resistivity of $7.60{\mu}{\Omega}{\cdot}cm$. This originates a mutual synergistic effect through a combination of the sinterability of the nanoparticles and the packing ability of the nanoplates. This is a conductive material that can be used to fabricate noncontact direct-printed conductive patterns with excellent electrical conductivity for various flexible electronics applications, including solar cells, displays, RFIDs, and sensors.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1518-1520
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• 2001

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 mV and 42.6 mA/$cm^2$ respectively.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.203-207
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• 2003

Ion implantation has been shown to significantly alter the surface properties of polymers. Polycarbonate(PC) and Polyimide(PI) were irradiated with 50keV $N^+$, $Xe^+$ ions to the fluences of $1{\times}10^{16}{\sim}3{\times}10^{17}\;cm^2$. The ion beam-induced modification of the electrical conductivity and the related structural features have been studied for polymers. The beam-induced chemical and structural modifications have been investigated by using X-ray Phooelectron Spectroscopy(XPS) and Fourier Transform-Infrared Spectroscopy(FT-IR), while the modification of the electrical properties was followed by performing a complete set of sheet resistance measurements. Samples irradiated at higher fluence showed a good conductivity, with a saturation value of $10^7{\Omega}/sq$. The XPS data demonstrate that the modification of the electrical properties is due to the progressive formation with increasing ion fluence of a dense amorphous carbon network, while PF-IR data reveal that material degradations through bond breaking are the main effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.63-66
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• 2002

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.