• Korean Journal of Materials Research
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• v.24 no.1
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• pp.6-12
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• 2014

In the present work, $WO_3$ and $WO_3-TiO_2$ were prepared by the chemical deposition method. Structural variations, surface state and elemental compositions were investigated for preparation of $WO_3-TiO_2$ sonocatalyst. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM) were employed for characterization of these new photocatalysts. A rhodamine B (Rh.B) solution under ultrasonic irradiation was used to determine the catalytic activity. Excellent catalytic degradation of an Rh.B solution was observed using the $WO_3-TiO_2$ composites under ultrasonic irradiation. Sonocatalytic degradation is a novel technology of treating wastewater. During the ultrasonic treatment of aqueous solutions sonoluminescence, cavitaties and "hot spot" occurred, leading to the dissociation of water molecules. In case of a $WO_3$ coupled system, a semiconductor coupled with two components has a beneficial role in improving charge separation and enhancing $TiO_2$ response to ultrasonic radiations. In case of the addition of $WO_3$ as new matter, the excited electrons from the $WO_3$ particles are quickly transferred to $TiO_2$ particle, as the conduction band of $WO_3$ is 0.74 eV which is -0.5 eV more than that of $TiO_2$. This transfer of charge should enhance the oxidation of the adsorbed organic substrate. The result shows that the photocatalytic performance of $TiO_2$ nanoparticles was improved by loading $WO_3$.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.299-302
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• 2011

[ $WO_3$ ]powders were ball-milled with an alumina ball for 0-72 hours. $In_2O_3$ doped $WO_3$ was prepared by soaking ball-milled $WO_3$ in an $InCl_3$ solution. The mixed powder was annealed at $700^{\circ}C$ for 30 min in an air atmosphere. A paste for screen-printing the thick film was prepared by mixing the $WO_3$:In2O3 powders with ${\alpha}$-terpinol and glycerol. $In_2O_3$ doped $WO_3$ thick films were fabricated into a gas sensor by a screen-printing method on alumina substrates. The structural properties of the $WO_3$:$InO_3$ thick films were a monoclinic phase with a (002) dominant orientation. The particle size of the $WO_3$:$InO_3$ decreased with the ball-milling time. The sensing characteristics of the $In_2O_3$ doped $WO_3$ were investigated by measuring the electrical resistance of each sensor in the test-box. The highest sensitivity to 5 ppm $CH_4$ gas and 5 ppm $CH_3CH_2CH_3$ gas was observed in the ball-milled $WO_3$:$InO_3$ gas sensors at 48 hours. The response time of $WO_3$:$In_2O_3$ gas sensors was 7 seconds and recovery time was 9 seconds for the methane gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.249-254
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• 2014

Due to their unique properties, tungsten borides are good candidates for the industrial applications where certain features such as high hardness, chemical inertness, resistance to high temperatures, thermal shock and corrosion. In this study, conditions were investigated for producing tungsten boride powder from tungsten oxide($WO_3$) by self-propagating high-temperature synthesis (SHS) followed by HCl leaching techniques. In the first stage of the study, the exothermicity of the $WO_3$-Mg reaction was investigated by computer simulation. Based on the simulation experimental study was conducted and the SHS products consisting of borides and other compounds were obtained starting with different initial molar ratios of $WO_3$, Mg and $B_2O_3$. It was found that $WO_3$, Mg and $B_2O_3$ reaction system produced high combustion temperature and radical reaction so that diffusion between W and B was not properly occurred. Addition of NaCl and replacement of $B_2O_3$ with B successfully solved the diffusion problem. From the optimum condition tungsten boride($W_2B$ and WB) powders which has 0.1~0.9 um particle size were synthesized.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1046-1054
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• 2001

Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.437-447
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• 2018

Visible-light-driven wide bandgap semiconductor photocatalysts were commonly developed via doping or coupling with another narrow bandgap metal oxide. However, these approaches required extra processing. The aim of study was to evaluate the photocatalytic performance of narrow bandgap $WO_x$ nanoparticles. A mixture of $WO_2$ and $WO_3$ nanoparticles were synthesized using solution precipitation technique. The photodegradation of RhB by these nanoparticles more effective in UV light than in visible light. In antibacterial susceptibility assay, $WO_x$ nanoparticles demonstrated good antibacterial against Gram-positive bacteria. The cell wall of bacterial was the main determinant in antibacterial effect other than $W^{4+}/W^{6+}$ ions and ROS.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1508-1510
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• 1999

스퍼터 퇴적 $WO_3$ 박막에 대해 열처리에 따른 전기적특성 및 구조적특성을 각각 4탐침법 및 AFM 관측에 의해 조사해 보고, 또한 스퍼터링시의 산소가스 유량비에 따른 $WO_3$ 박막의 막질을 ESCA에 의해 평가하였다 실험 결과 열처리에 의해 $WO_3$ 박막 표면의 평균거칠기가 $2.45\AA$에서 $152\AA$으로 크게 증가함을 알 수 있었다 또한 스퍼터시 산소유량비에 따른 효과를 ESCA로 관측한 결과, 열처리전에는 주피크가 34eV에서 나타남에 비해 열처리 후에는 36eV전후에서 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.143-148
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• 2001

PbWO$_4$ can be densified at 85$0^{\circ}C$ and it shows fairy good microwave dielectric properties; dielectric constant($\varepsilon$$_{r}$) of 21.5, quality factor(Q $\times$f$_{0}$) of 37,224 GHz, and temperature coefficient of resonant frequency($\tau$/suf f/) of -31ppm/$^{\circ}C$. Due to its low sintering temperature, PbWO$_4$ can be used as a multilayered chip component at microwave frequency with high electrical performance by using high conductive electrode metals such as Ag and Cu. However, in order to use this material for microwave communication devices, the $\tau$$_{f}$ of PbWO$_4$ must be stabilized to near zero with high Q$\times$f$_{0}$. In present study, PbWO$_4$ was modified by adding TiO$_2$, B$_2$O$_3$, and CuO in order to improve the microwave dielectric properties without increasing the sintering temperature. The addition of TiO$_2$ increased the $\tau$$_{f}$ and $\varepsilon$$_{r}$, due to its high rr(200ppm/$^{\circ}C$) and $\varepsilon$$_{r}$(100). However, the addition of TiO$_2$ reduced the Q$\times$f$_{0}$ value. When the mot ratio of PbWO$_4$ and TiO$_2$ was 0.913:7.087, near zero $\tau$$_{f}$(0.2ppm/$^{\circ}C$) was obtaibed with $\varepsilon$$_{r}$=22.3, and Q$\times$f/$_{0}$=21,443GHz. With this composition, various amount of B$_2$O$_3$ and CuO were added in order to improve the quality factor. The addition, of B$_2$O$_3$ decreased the $\varepsilon$$_{r}$. However, increased Q$\times$f$_{0}$ and $\tau$$_{f}$. When 2.5 wt% of B$_2$O$_3$ was added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ =8.2, $\varepsilon$$_{r}$=20.3, Q$\times$f$_{0}$=54784 GHz. When CuO added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ was continuously decreased. And $\varepsilon$$_{r}$ . and Q$\times$f$_{0}$ were increased up to 1.0 wt% then decreased. At 0.1 wt% of CuO addition, the 0.913PbWO$_4$-7.087Ti0$_2$ Ceramic Showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$=4.4ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32,932 GHz.> 0/=32,932 GHz.X>=32,932 GHz.> 0/=32,932 GHz.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1220-1222
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• 1995

In the design of a complementary electrochromic windows based on $WO_3/Li^+$ conducting electrolyte/$V_2O_5$ system, a characterization of electrochromic properties of $WO_3/V_2O_5$ complementary devices as a function of thickness combinations is necessary in order to predict such as the safe operating voltage, the optical modulation range and the optical switching response. In this paper, the effects of $WO_3\;and\;V_2O_5$ thin films thickness combinations on device performance were systematically investigated.