• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.127-131
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• 1992

Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.

• Publications of The Korean Astronomical Society
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• v.32 no.1
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• pp.189-191
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• 2017

We performed systematic observations of the H $\small{I}$ $Br{\alpha}$ line ($4.05{\mu}m$) in 51 nearby (z<0.3) ultraluminous infrared galaxies (ULIRGs), using AKARI near-infrared spectroscopy. The $Br{\alpha}$ line is predicted to be the brightest among the H ${\small{I}}$ recombination lines in ULIRGs with visual extinction higher than 15 mag. We detected the $Br{\alpha}$ line in 33 ULIRGs. In these galaxies, the relative contribution of starburst to the total infrared luminosity ($L_{IR}$) is estimated on the basis of the ratio of the $Br{\alpha}$ line luminosity ($L_{Br{\alpha}}$) to $L_{IR}$. The mean $L_{Br{\alpha}}/L_{IR}$ ratio in LINERs or Seyferts is significantly lower (~50%) than that in H $\small{II}$ galaxies. This result indicates that active galactic nuclei contribute significantly (~50%) to $L_{IR}$ in LINERs, as well as Seyferts. We also estimate the absolute contribution of starburst to $L_{IR}$ using the ratio of star formation rates (SFRs) derived from $L_{Br{\alpha}}$ ($SFR_{Br{\alpha}}$) and those needed to explain $L_{IR}$ ($SFR_{IR}$). The mean $SFR_{Br{\alpha}}/SFR_{IR}$ ratio is only 0.33 even in H $\small{II}$ galaxies, where starburst is supposed to dominate the luminosity. We attribute this apparently low $SFR_{Br{\alpha}}/SFR_{IR}$ ratio to the absorption of ionizing photons by dust within H $\small{II}$ regions.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• YAKHAK HOEJI
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• v.17 no.1
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• pp.9-12
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• 1973

Determination of dl${\alpha}$-tocopherol and its acetate in their preparation through Infrared absorption spectrum was examined, using the sharp bands at 1085cm$^{-1}$ and 1210cm$^{-1}$ res[ectovely as the key bands. The accuracy of the determination was 100${\pm}$2% to the weight taken.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.71-75
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• 2004

$\alpha$-LiFe $O_2$ powders have been prepared by a sol-gel method. The crystallographic and magnetic properties were characterized with a x-ray diffractometry, Mossbauer spectroscopy, and vibrating Samples magnetometry. The ${\gamma}$-LiFe $O_2$+LiFe$_{5}$ $O_{8}$ phase is observed in the Samples annealed at $600^{\circ}C$ for 3h in air and $\alpha$-LiFe $O_2$ phase is observed in the Samples annealed at $600^{\circ}C$ for 3 h in $H_2$(5％)/Ar(Bal.) gas atmosphere. The crystal structure of $\alpha$-LiFe $O_2$ is found to be cubic with a lattice a=4.193$\pm$0.0005 $\AA$. The Neel temperature of $\alpha$-LiFe $O_2$ is found to be 130$\pm$3 K.

• Elastomers and Composites
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• v.43 no.4
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• pp.264-270
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• 2008

$\alpha$-D-mannosyl fullerene[$C_{60}$]-functionalized gold nanoparticle films were selfassembled using the layer-by-layer method on the reactive of glass slides functionlized with 3-aminopropyltrimethoxysilane. The functionalized glass slides were alternately soaked in the solutions containing $\alpha$-D-mannosyl fullerene[$C_{60}$] and 4-aminothiophenoxide/hexanethiolate-protected gold nanoparticles. $\alpha$-D-mannosyl fullerene[$C_{60}$]-functionalized gold nanoparticle films have grown up to 5 layers depending on the immersion time. The self-assembled nanoparticle films were characterized using UV-vis spectroscopy showed that the surface plasmon band of gold at 530 nm gradually became more evident as successive layers were added to the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.91-94
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• 1997

$\alpha$-sexithienyl($\alpha$-6T) thin films were deposited by Organic Molecular Beam Deposition(OMBD) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature. and vacuum pressure an the formation of these films have been studied. The molecular orientations of $\alpha$-6T films were investigated with the polarized electronic absorption spectroscopy. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The film deposited at an elevated substrate temperature (~9 $O^{\circ}C$) showed higher conductivity than the film deposited at room temperature.

• Microbiology and Biotechnology Letters
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• v.45 no.4
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• pp.311-315
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• 2017

${\alpha}$-glucosidase inhibitory compounds (1-4) in a 50% methanol extract of Euonymus alatus were isolated by activity-based fractionations and the structures determined on the basis of chemical and spectral characterization techniques such as $^1H$ and $^{13}C$ nuclear magnetic resonance spectroscopy, $^1H-^1H$ correlation spectroscopy (COSY), and heteronuclear multiple bond correlation (HMBC). The compounds 1-4 belong to flavonols and exhibited potent inhibitory activities against ${\alpha}$-glucosidase, with $IC_{50}$ values of 25.3, 17.1, 47.3, and $35.1{\mu}M$, respectively. All the isolated compounds were more potent than the positive control acarbose. This is the first report describing the potential hypoglycemic effect of Euonymus alatus through ${\alpha}$-glucosidase inhibition and identification of its active components.