• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.10
• /
• pp.2122-2129
• /
• 2002

Creep damage using a reference stress(RS) was analyzed for type 316LN stainless steel. The generalized K-R equation was reconstructed into the RS equation using a critical stress value $\sigma$. The RS equation was derived from the critical stress in failure time $t_f$ instead of material damage parameter $\omega$, which indicates the critical condition of collapse or approach to gross instability of materials during creep. For obtaining the reference stress, a series of creep tests and tensile tests were conducted with at 55$0^{\circ}C$ and $600^{\circ}C$. The stress-time data obtained from creep tests were applied to the RS equations to characterize the creep damage of type 316LN stainless steel. The value of creep constant r with stress levels was about 18 at 55$0^{\circ}C$ and 21 at $600^{\circ}C$. This value was almost similar with r = 24 in the K-R equation, which was obtained by using damage parameter $\omega$. Relationship plots of creep failure strain and life fraction $(t_f /t_r)$ were also obtained with different λ values. The RS equation was therefore more convenient than the generalized K-R equation, because the measuring process to quantify the damage parameter $\omega$ such as voids or micro cracks in crept materials was omitted. The RS method can be easily used by designers and plant operator as a creep design tool.

• Journal of Korean Society of Environmental Engineers
• /
• v.33 no.3
• /
• pp.167-173
• /
• 2011

The Effects of external resistance on electrical properties such as current density, power density and coulombic efficiency were investigated in two-chamber type MFCs using a ferricyanide as reducing agent. A stable electricity was produced when a constant time elapsed after innoculation of mixed cultures into the anode compartment; voltages from 0.13 to 0.16 V was measured at $50{\Omega}$ of external resistance. When the external resistance was increased, the current density decreased and the power density rapidly increased and then slowly decreased. Big variation of electrical properties was observed in high-current density region due to the concentration loss related with substrate consumption in repeated experiments changing the external resistance. The maximum power density ($175.8mW/m^2$) and coulombic efficiency (46.1%) were obtained at $100{\Omega}$ of the external resistance which is nearest with the internal resistance ($134{\Omega}$) of MFC system.

• Communications of the Korean Mathematical Society
• /
• v.37 no.4
• /
• pp.1249-1258
• /
• 2022

In this study, we show that the strong exponential limit shadowing property (SELmSP, for short), which has been recently introduced, exists on a neighborhood of a hyperbolic set of a diffeomorphism. We also prove that Ω-stable diffeomorphisms and 𝓛-hyperbolic homeomorphisms have this type of shadowing property. By giving examples, it is shown that this type of shadowing is different from the other shadowings, and the chain transitivity and chain mixing are not necessary for it. Furthermore, we extend this type of shadowing property to positively expansive maps with the shadowing property.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.49 no.6
• /
• pp.63-70
• /
• 2012

This paper discussed on the directive gain improvement method of the U-type ultra wide-band(UWB) planar patch antenna model with CPW feeding. For directive gain improvement, the U-type printed patch antenna model with CPW feeding is reconstructed as a microstrip structure by adding a reflection plane with aperture slot. The reflection coefficient of the reconstructed antenna is less than -6.5 dB(VSWR < 3.3) to the characteristic impedance of $50.08{\Omega}$ and showed the directive radiation patterns with the directive gain of 7.5 dBi ~ 10.1 dBi, the front-back ratio of 17.8 dB ~ 28.7 dB and the range of -3dB radiation angle over ${\pm}30^{\circ}$ to the main beam direction of ${\theta}=0^{\circ}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.265.1-265.1
• /
• 2016

여러 application에 적용하기 위하여 p-type SnO 박막과 전극 간의 접촉 저항을 분석이 필요하였다. 이를 Transmission Line Method(TLM) 패턴 소자를 제작한 후 전기적 특성을 분석함으로써 알 수 있었다. $Si/SiO_2$ 기판에 Reactive Magnetron Sputtering법을 이용하여 c축 우선 배향된 SnO를 100nm 증착하고 photolithography 공정을 통해 전극을 패턴화하여 100nm 두께로 증착하였다. 전극 간 거리는 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, $1024{\mu}m$로 각각 2배씩 증가하는 패턴이고 폭 W는 $300{\mu}m$ 이다. p-type SnO 의 경우, work function이 4.8eV이기 때문에 전극과 ohmic contact이 되기 위해서는 4.8eV보다 높은 work function 값을 가지는 전극이 필요하였다. 이 조건과 맞는 후보로 Ni(5.15eV), ITO(5.3eV)를 설정한 후 소자를 제작하였다. 제작된 소자는 열처리 하지 않은 소자와 Rapid Thermal Annealing(RTA) 장비에서 $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$에서 각각 1분씩 열처리한 소자의 특성을 분석하였다. 열처리 하지 않은 소자의 경우 Ni 전극의 specific contact resistance는 $3.42E-2{\Omega}$의 값을 나타내었고, ITO의 경우 $3.62E-2{\Omega}$값을 나타내었다.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.123.1-123.1
• /
• 2011

기존의 p-type 태양전지 공정과 유사한 공정으로 제작되는 n-type $ALU^+$태양전지는 후면에 Al을 screen printing하여 emitter층을 형성한 구조이다. screen printing은 공정의 단순화와 제조 단가의 저비용으로 인해, metalization 공정에서 많이 쓰이고 있다. 본 연구에서는 양산 가능한 n-type $ALU^+$태양전지 제작을 위해, 후면 Al emitter 층을 single, dobule, triple로 변경하며 Al의 양을 가변하였고, 그에 따른 특성의 변화를 연구하였다. screen printing 횟수가 변경된 후면 Al emitter 층의 특성은 DIV와 LIV 측정을 통해 분석하였다. 실험 결과 Al을 single printing 하였을 때보다, double, triple printing을 통하여 Al의 양을 증가하였을 때, DIV 데이터에서 직렬저항(Rs)가 $24.44{\Omega}/cm^2$에서 $0.31{\Omega}/cm^2$으로 감소하였고, 단락전류(Jsc)는 1.26mA/$cm^2$에서 37.7mA/$cm^2$으로 약 300% 증가한 것을 확인할 수 있었다. 프린팅 횟수에 따른 LIV 데이터의 Fill Factor를 분석하게 되면, double printing이 64.35%로 54.75%의 triple printing보다 약 1.17배 더 향상된 것으로 확인하였다. 이러한 결과를 바탕으로 후면 Al emitter 형성시에 Al의 양이 적절하지 못한 이유로, Al emitter가 제대로 형성되지 못하거나 과하게 형성되면, 태양전지 내부에 누설 저항의 변화와 누설 전류의 증가로 인해, 단락전류(Jsc)와 Fill Factor 감소의 주요 원인이 된다는 것을 확인할 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.17 no.6
• /
• pp.65-71
• /
• 1980

The Sn O2-Si Heterojunction sola cells are Prepared by vacuum deposition of SnO2 on N- and P-type Si - wafers arts the effects of annealing on the Solar cell characteiistics are presented. The existence of optimumannealins temperature for maximum open-circuit voltage and short - circuit current of the solar cell is observed. The optimum tomperature, when low resistivity (7- 2.3 [$\Omega$.cm]) P-and N-type Si -wafers are used, is 500 [$^{\circ}C$] End 400 [$^{\circ}C$] when high resistivity[41-58 [$\Omega$.cm]) P-type Si-wafers are used.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.17 no.5
• /
• pp.149-153
• /
• 2003

In this paper, a hexagon-type piezoelectric transformer was investigated to increase the output power. The length of its side was 14mm and 17.5[mm], respectively. The piezoelectric ceramics was composed to PZT-PMN-PSN. This composition showed the characteristics which had an about 1200 of the mechanical Q-factor, 0.55 of the electromechanical coupling coefficient, 320 x 10$\^$-12/ C/N of the piezoelectric constant d$\sub$33/, 0.3% of the dissipation factor, etc. The voltage step-up ratio increased with increasing the load resistance, Rt., so it reached 80 with R$\sub$L/ of l[M$\Omega$] and was proportion to the length of side of the hexagon-type piezoelectric transformer.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.11
• /
• pp.555-561
• /
• 2001

In this paper, the low power (1.5 W) solenoid-type magnetic thin-film transformers utilizing a $Ni_{81}Fe_{19)$ core material were designed and fabricated for 5 MHz-drive DC-DC converter application. The $20\mum$ thick copper films were used as the coils. The transformers fabricated in this work have the sizes of $3.08 mm\times25.5 mm\; and\; 6.15 mm\times12.75 mm.$ The optimum design of solenoid-type magnetic thin film transformers was performed utilizing the conventional equations, a Maxwell computer simulator (Ansoft HFSS V7.0 for PC), and parameters obtained from the magnetic properties of NiFe magnetic core materials. frequency characteristics of inductance, dc resistance (R), coupling factor (k) and gain of developed transformers were measured using HP4194A impedance and gain-phase analyzer. The fabricated transformers with the size of $6.15 mm\time12.75 mm$ exhibit the inductance of $0.83 \muH$, the dc resistance of $2.3\Omega$$\Omega$, the k of 0.91 and the gain of -1 dB at 5 MHz, which show the comparable results to those reported in the recent literatures. The measured high-frequency characteristics for the fabricated transformers agreed well with those obtained by theoretical calculations .

• Journal of Applied Reliability
• /
• v.7 no.1
• /
• pp.23-29
• /
• 2007

Probe card is a test component which is to classify the known good die with electrical contact before the packaging in the ATE (automatic testing equipment). Conventional probe tip was mostly needle type, it has been difficult to meet with conventional type, because of decreasing chip size, pad to pad pitch and pads size increasingly. For that reason, probe cards using MEMS (micro electro mechanical system) technology have been developed for various semiconductor chips. In this paper, Area Array type MEMS Probe tip was designed,, fabricated, and characterized its mechanical and electrical properties. The authors found that good electrical characteristics under $1{\Omega}$ were acquired with gold (Au) and aluminium (Al) pad contact test over 0.5gf and 4gf respectively. And, contact resistance variation under $0.1{\Omega}$ were achieved with 100,000 times of repetition test. And, insertion loss (IS) for high frequency operation was ascertained over 300MHz at -3dB loss.