• 제목/요약/키워드: $\Omega$ Type

검색결과 730건 처리시간 0.031초

고저항 정밀측정용 자동화 시스템의 제작 (The Development of an accurate, automated measurement system of high value resistors)

  • 류제천;강전홍;유권상;유광민
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 B
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    • pp.806-808
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    • 1999
  • An automatic measurement system of high value resistance standards($10M{\Omega}$ and $1G{\Omega}$) was developed. A system has been assembled with programmable do calibrators in two of the arms. An electrometer is used to measure the difference in currents flowing through the remaining two arms of the bridge consisting of unknown and standard resistors. Type A standard uncertainty was 2ppm in the $10M{\Omega}$, 1 ppm in the $1G{\Omega}$.

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A NOTE ON THE q-EULER NUMBERS AND POLYNOMIALS WITH WEIGHT (α,ω)

  • Rim, Seog-Hoon;Jeong, Joo-Hee
    • 호남수학학술지
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    • 제34권2호
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    • pp.183-190
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    • 2012
  • The main purpose of this paper is to introduce a new type of $q$-Euler numbers and polynomials with weak weight (${\alpha}$,${\omega}$): $\tilde{E}^{({\alpha},{\omega})}_{n,q}$ and $\tilde{E}^{({\alpha},{\omega})}_{n,q}(x)$, respectively. By using the fermionic $p$-adic $q$-integral on $\mathbb{Z}_p$, we can obtain some results and derive some recurrence identities for the $q$-Euler numbers and polynomials with weak weight (${\alpha}$,${\omega}$).

A DOUBLE INTEGRAL CHARACTERIZATION OF A BERGMAN TYPE SPACE AND ITS MÖBIUS INVARIANT SUBSPACE

  • Yuan, Cheng;Zeng, Hong-Gang
    • 대한수학회보
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    • 제56권6호
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    • pp.1643-1653
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    • 2019
  • This paper shows that if $1<p<{\infty}$, ${\alpha}{\geq}-n-2$, ${\alpha}>-1-{\frac{p}{2}}$ and f is holomorphic on the unit ball ${\mathbb{B}}_n$, then $${\int_{{\mathbb{B}}_n}}{\mid}Rf(z){\mid}^p(1-{\mid}z{\mid}^2)^{p+{\alpha}}dv_{\alpha}(z)<{\infty}$$ if and only if $${\int_{{\mathbb{B}}_n}}{\int_{{\mathbb{B}}_n}}{\frac{{\mid}f(z)-F({\omega}){\mid}^p}{{\mid}1-(z,{\omega}){\mid}^{n+1+s+t-{\alpha}}}}(1-{\mid}{\omega}{\mid}^2)^s(1-{\mid}z{\mid}^2)^tdv(z)dv({\omega})<{\infty}$$ where s, t > -1 with $min(s,t)>{\alpha}$.

MULTIPLE SOLUTIONS OF A PERTURBED YAMABE-TYPE EQUATION ON GRAPH

  • Liu, Yang
    • 대한수학회지
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    • 제59권5호
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    • pp.911-926
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    • 2022
  • Let u be a function on a locally finite graph G = (V, E) and Ω be a bounded subset of V. Let 𝜀 > 0, p > 2 and 0 ≤ λ < λ1(Ω) be constants, where λ1(Ω) is the first eigenvalue of the discrete Laplacian, and h : V → ℝ be a function satisfying h ≥ 0 and $h{\not\equiv}0$. We consider a perturbed Yamabe equation, say $$\{\begin{array}{lll}-{\Delta}u-{\lambda}u={\mid}u{\mid}^{p-2}u+{\varepsilon}h,&&\text{ in }{\Omega},\\u=0,&&\text{ on }{\partial}{\Omega},\end{array}$$ where Ω and ∂Ω denote the interior and the boundary of Ω, respectively. Using variational methods, we prove that there exists some positive constant 𝜀0 > 0 such that for all 𝜀 ∈ (0, 𝜀0), the above equation has two distinct solutions. Moreover, we consider a more general nonlinear equation $$\{\begin{array}{lll}-{\Delta}u=f(u)+{\varepsilon}h,&&\text{ in }{\Omega},\\u=0,&&\text{ on }{\partial}{\Omega},\end{array}$$ and prove similar result for certain nonlinear term f(u).

낮은 접촉 저항을 갖는 Co/Si/co n형 4H-SiC의 오옴성 접합 (Low resistivity Ohmic Co/Si/Co contacts to n-type 4H-SiC)

  • 김창교;양성준;이주헌;조남인;정경화;김남균;김은동;김동학
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.764-768
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    • 2002
  • Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

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Batch 형태 LPCVD법에 의한 폴리실리콘의 인농도 및 Rs 특성에 관한 연구 (A Study on the Phosphorous Concentration and Rs Property of the Doped Polysilicon by LPCVD Method of Batch type)

  • 정양희;김명규
    • 한국전기전자재료학회논문지
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    • 제11권3호
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    • pp.195-202
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    • 1998
  • The LPCVD system of batch type for the massproduction of semiconductor fabrication has a problem of phosphorous concentration uniformity in the boat. In this paper we study an improvement of the uniformity for phosphorous concentration and sheet resistance. These property was improved by using the nitrogen process and modified long nozzle for gas injection tube in the doped polysilicon deposition system. The phosphorous concentration and its uniformity for polysilicon film are measured by XRF(X-ray Fluorescence) for the conventional process condition and nitrogen process. In conventional process condition, the phosphorous concentration, it uniformity and sheet resistance for polysilicon film are in the range of 3.8~5.4$\times$10\ulcorner atoms/㎤, 17.3% and 59~$\Omega$/ , respectively. For the case of nitrogen process the corresponding measurements exhibited between 4.3~5.3$\times$10\ulcorner atoms/㎤, 10.6% and 58~81$\Omega$/ . We find that in the nitrogen process the uniformity of phosphorous concentration improved compared with conventional process condition, however, the sheet resistance in the up zone of the boat increased about 12 $\Omega$/ . In modified long nozzle, the phosphorous concentration, its uniformity and sheet resistance for polysilicon films are in the range of 4.5~5.1$\times$10\ulcorner atoms/㎤, 5.3% and 60~65$\Omega$/ respectively. Annealing after $N_2$process gives the increment of grain size and the decrement of roughness. Modification of nozzle gives the increment of injection amount of PH$_3$. Both of these suggestion result in the stable phosphorous concentration and sheet resistance. The results obtained in this study are also applicable to process control of batch type system for memory device fabrication.

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n형 4H-SiC의 Cu/Si/Cu 오옴성 접합 (Cu/Si/Cu Ohmic contacts to n-type 4H-SiC)

  • 정경화;조남인;김민철
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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    • pp.73-77
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    • 2002
  • n형 SiC를 이용한 오옴성 접합을 알아보고자 Cu/Si/Cu 형태의 접합실험을 실시하였다. 오옴성 접합의 형성을 위하여 Cu/Si/Cu를 증착 하고 열처리를 시행하였다. 열처리는 RTP를 이용한 진공상태의 2-step 방법으로 시행하였다. 접합에 계산을 위하여 TLM구조로, 면 저항(Rs), 접촉저항(Rc), 이동거리(L$_{T}$), 패드간거리(d), 저항(R$_{T}$)값을 구하면 접합비 저항(Pc) 값을 알 수 있다. 이로 인한 결과 값은 접촉저항 값은 2$\Omega$이었고, 이동간 거리는 1$\mu\textrm{m}$이었으며 접합비저항($\rho$c)=1.0x$10^{-6}$ $\Omega$$\textrm{cm}^2$ 값을 얻을 수 있었다. 물리적 변화를 AES 및 XRD를 이용하여 알아보았다. SiC 계면 상에 Cu의 변화로 인한 silicide형성이 이루어짐을 알 수 있었다.있었다.

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C- 및 Fe-(Beewax.Polyethylene) 정특성 감온소자 (C-and Fe-(Beewax.Polyethylene) PTC Thermistors)

  • 이종현;손병기;이종덕
    • 대한전자공학회논문지
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    • 제13권4호
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    • pp.6-11
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    • 1976
  • beewax와 polyethylene을 혼합한 모체에 탄색 및 연분말을 징량첨가시켜서 정특성감온소자를 제조하였다. C.(beewax·Polyethylene)시편은 온도범위 20°∼90℃에서 104-1010Ωcm의 PTC특성을 나타내었으며 제조과정상에 분말혼합 및 가압냉각방법를 도입함으로써 그 재현성과 안정성을 현저히 개선시킬 수 있었다. 또한 Fe-(betwax· polyethylene)시편은 같은 온도범위에서 102-1010Ωcm의 PTC특성을 나타내었으며 저저항범위에서 PTC효과를 얻을 수 있었다. The carbon (the iron) -beewax·polyethylene thermistors have been prepared by heating the well ground mixture of carbon (iron), beewax and polyethylene at 160℃ for one hour and by cooling it under pressure of 12kgw/cm2. The resistivity for the former (the latter) increased from 102Ω·cm (104Ω·cw) to 1010Ω·cm(1010Ω·cm) as temperature changed from 20℃ to 90℃. The resistivity, 102Ω·cm at room temperature for the former, was lower by order Q( two than that for the papostor made by the earlier reporter. The reproducibility, which has been an important Problem for this type of thermistors to be industrialized, was improved by introducing pressure in cooling procedure for both carbon and iron thermistors.

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THE SPHERICAL NON-COMMUTATIVE TORI

  • Boo, Deok-Hoon;Oh, Sei-Qwon;Park, Chun-Gil
    • 대한수학회지
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    • 제35권2호
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    • pp.331-340
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    • 1998
  • We define the spherical non-commutative torus $L_{\omega}$/ as the crossed product obtained by an iteration of l crossed products by actions of, the first action on C( $S^{2n+l}$). Assume the fibres are isomorphic to the tensor product of a completely irrational non-commutative torus $A_{p}$ with a matrix algebra $M_{m}$ ( ) (m > 1). We prove that $L_{\omega}$/ $M_{p}$ (C) is not isomorphic to C(Prim( $L_{\omega}$/)) $A_{p}$ $M_{mp}$ (C), and that the tensor product of $L_{\omega}$/ with a UHF-algebra $M_{p{\infty}}$ of type $p^{\infty}$ is isomorphic to C(Prim( $L_{\omega}$/)) $A_{p}$ $M_{m}$ (C) $M_{p{\infty}}$ if and only if the set of prime factors of m is a subset of the set of prime factors of p. Furthermore, it is shown that the tensor product of $L_{\omega}$/, with the C*-algebra K(H) of compact operators on a separable Hilbert space H is not isomorphic to C(Prim( $L_{\omega}$/)) $A_{p}$ $M_{m}$ (C) K(H) if Prim( $L_{\omega}$/) is homeomorphic to $L^{k}$ (n)$\times$ $T^{l'}$ for k and l' non-negative integers (k > 1), where $L^{k}$ (n) is the lens space.$T^{l'}$ for k and l' non-negative integers (k > 1), where $L^{k}$ (n) is the lens space.e.

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Capsaicin과 규소수지 처리가 튀김유의 가열산화 억제에 미치는 영향 (Effect of Capsaicin and Silicone Resin Treatment on Inhibition of Thermal Oxidation in Frying Oil)

  • 이미숙;이근보
    • 한국식품영양학회지
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    • 제13권6호
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    • pp.534-538
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    • 2000
  • 대두유를 기초로 한 튀김유에 capsicum, butter flavor, 규소수지를 각각 0.20, 0.15%($\omega$/$\omega$) 및 10ppm 처리하여 가열안정성의 향상 및 육두향 약화에 효과가 있는 것으로 확인되었다. 즉, capsicum과 규소수지를 병행처리한 튀김유는 185$\pm$2$^{\circ}C$의 온도조건 하에서 3시간 동안 연속적으로 열처리할 경우 AV 및 SP가 각각 무처리군의 0.385, 22$0^{\circ}C$에 비하여 크게 향상된 0.301, 232$^{\circ}C$를 나타내었다. 이러한 효과는 capsicum의 항산화 효과와 함께 소포제의 일종인 규소수지의 작용에 따라 가열처리에 따른 튀김유의 표면적 팽창을 방지하여 유리지방산생성 및 연기발생을 억제한데 따른 효과인 것으로 판단되었다. 또한, 0.15%($\omega$/$\omega$)의 butter flavor처리에 따라 튀김유 및 튀김물에서 발생하는 육두향 및 기름타는 냄새를 막아주는 효과가 인정되어 새로운 형태의 튀김유 제품 생산이 가능할 것으로 기대되었다.

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