• Title/Summary/Keyword: $\Omega$ Type

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The Development of an accurate, automated measurement system of high value resistors (고저항 정밀측정용 자동화 시스템의 제작)

  • Ryu, Je-Cheon;Kang, Jeon-Hong;Ryu, Kwon-Sang;Yu, Kwang-Min
    • Proceedings of the KIEE Conference
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    • 1999.07b
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    • pp.806-808
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    • 1999
  • An automatic measurement system of high value resistance standards($10M{\Omega}$ and $1G{\Omega}$) was developed. A system has been assembled with programmable do calibrators in two of the arms. An electrometer is used to measure the difference in currents flowing through the remaining two arms of the bridge consisting of unknown and standard resistors. Type A standard uncertainty was 2ppm in the $10M{\Omega}$, 1 ppm in the $1G{\Omega}$.

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A NOTE ON THE q-EULER NUMBERS AND POLYNOMIALS WITH WEIGHT (α,ω)

  • Rim, Seog-Hoon;Jeong, Joo-Hee
    • Honam Mathematical Journal
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    • v.34 no.2
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    • pp.183-190
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    • 2012
  • The main purpose of this paper is to introduce a new type of $q$-Euler numbers and polynomials with weak weight (${\alpha}$,${\omega}$): $\tilde{E}^{({\alpha},{\omega})}_{n,q}$ and $\tilde{E}^{({\alpha},{\omega})}_{n,q}(x)$, respectively. By using the fermionic $p$-adic $q$-integral on $\mathbb{Z}_p$, we can obtain some results and derive some recurrence identities for the $q$-Euler numbers and polynomials with weak weight (${\alpha}$,${\omega}$).

A DOUBLE INTEGRAL CHARACTERIZATION OF A BERGMAN TYPE SPACE AND ITS MÖBIUS INVARIANT SUBSPACE

  • Yuan, Cheng;Zeng, Hong-Gang
    • Bulletin of the Korean Mathematical Society
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    • v.56 no.6
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    • pp.1643-1653
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    • 2019
  • This paper shows that if $1<p<{\infty}$, ${\alpha}{\geq}-n-2$, ${\alpha}>-1-{\frac{p}{2}}$ and f is holomorphic on the unit ball ${\mathbb{B}}_n$, then $${\int_{{\mathbb{B}}_n}}{\mid}Rf(z){\mid}^p(1-{\mid}z{\mid}^2)^{p+{\alpha}}dv_{\alpha}(z)<{\infty}$$ if and only if $${\int_{{\mathbb{B}}_n}}{\int_{{\mathbb{B}}_n}}{\frac{{\mid}f(z)-F({\omega}){\mid}^p}{{\mid}1-(z,{\omega}){\mid}^{n+1+s+t-{\alpha}}}}(1-{\mid}{\omega}{\mid}^2)^s(1-{\mid}z{\mid}^2)^tdv(z)dv({\omega})<{\infty}$$ where s, t > -1 with $min(s,t)>{\alpha}$.

MULTIPLE SOLUTIONS OF A PERTURBED YAMABE-TYPE EQUATION ON GRAPH

  • Liu, Yang
    • Journal of the Korean Mathematical Society
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    • v.59 no.5
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    • pp.911-926
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    • 2022
  • Let u be a function on a locally finite graph G = (V, E) and Ω be a bounded subset of V. Let 𝜀 > 0, p > 2 and 0 ≤ λ < λ1(Ω) be constants, where λ1(Ω) is the first eigenvalue of the discrete Laplacian, and h : V → ℝ be a function satisfying h ≥ 0 and $h{\not\equiv}0$. We consider a perturbed Yamabe equation, say $$\{\begin{array}{lll}-{\Delta}u-{\lambda}u={\mid}u{\mid}^{p-2}u+{\varepsilon}h,&&\text{ in }{\Omega},\\u=0,&&\text{ on }{\partial}{\Omega},\end{array}$$ where Ω and ∂Ω denote the interior and the boundary of Ω, respectively. Using variational methods, we prove that there exists some positive constant 𝜀0 > 0 such that for all 𝜀 ∈ (0, 𝜀0), the above equation has two distinct solutions. Moreover, we consider a more general nonlinear equation $$\{\begin{array}{lll}-{\Delta}u=f(u)+{\varepsilon}h,&&\text{ in }{\Omega},\\u=0,&&\text{ on }{\partial}{\Omega},\end{array}$$ and prove similar result for certain nonlinear term f(u).

Low resistivity Ohmic Co/Si/Co contacts to n-type 4H-SiC (낮은 접촉 저항을 갖는 Co/Si/co n형 4H-SiC의 오옴성 접합)

  • Kim, C.K.;Yang, S.J.;Lee, J.H.;Cho, N.I.;Jung, K.H.;Kim, N.K.;Kim, E.D.;Kim, D.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.764-768
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    • 2002
  • Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

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A Study on the Phosphorous Concentration and Rs Property of the Doped Polysilicon by LPCVD Method of Batch type (Batch 형태 LPCVD법에 의한 폴리실리콘의 인농도 및 Rs 특성에 관한 연구)

  • 정양희;김명규
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.3
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    • pp.195-202
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    • 1998
  • The LPCVD system of batch type for the massproduction of semiconductor fabrication has a problem of phosphorous concentration uniformity in the boat. In this paper we study an improvement of the uniformity for phosphorous concentration and sheet resistance. These property was improved by using the nitrogen process and modified long nozzle for gas injection tube in the doped polysilicon deposition system. The phosphorous concentration and its uniformity for polysilicon film are measured by XRF(X-ray Fluorescence) for the conventional process condition and nitrogen process. In conventional process condition, the phosphorous concentration, it uniformity and sheet resistance for polysilicon film are in the range of 3.8~5.4$\times$10\ulcorner atoms/㎤, 17.3% and 59~$\Omega$/ , respectively. For the case of nitrogen process the corresponding measurements exhibited between 4.3~5.3$\times$10\ulcorner atoms/㎤, 10.6% and 58~81$\Omega$/ . We find that in the nitrogen process the uniformity of phosphorous concentration improved compared with conventional process condition, however, the sheet resistance in the up zone of the boat increased about 12 $\Omega$/ . In modified long nozzle, the phosphorous concentration, its uniformity and sheet resistance for polysilicon films are in the range of 4.5~5.1$\times$10\ulcorner atoms/㎤, 5.3% and 60~65$\Omega$/ respectively. Annealing after $N_2$process gives the increment of grain size and the decrement of roughness. Modification of nozzle gives the increment of injection amount of PH$_3$. Both of these suggestion result in the stable phosphorous concentration and sheet resistance. The results obtained in this study are also applicable to process control of batch type system for memory device fabrication.

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Cu/Si/Cu Ohmic contacts to n-type 4H-SiC (n형 4H-SiC의 Cu/Si/Cu 오옴성 접합)

  • 정경화;조남인;김민철
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.11a
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    • pp.73-77
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    • 2002
  • Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.

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C-and Fe-(Beewax.Polyethylene) PTC Thermistors (C- 및 Fe-(Beewax.Polyethylene) 정특성 감온소자)

  • Lee, Jong-Hyeon;Son, Byeong-Gi;Lee, Jong-Deok
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.13 no.4
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    • pp.6-11
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    • 1976
  • The carbon (the iron) -beewax.polyethylene thermistors have been prepared by heating the well ground mixture of carbon (iron), beewax and polyethylene at 16$0^{\circ}C$ for one hour and by cooling it under pressure of 12kgw/cm2. The resistivity for the former (the latter) increased from 102$\Omega$.cm (104$\Omega$.cw) to 1010$\Omega$.cm(1010$\Omega$.cm) as temperature changed from 2$0^{\circ}C$ to 9$0^{\circ}C$. The resistivity, 102$\Omega$.cm at room temperature for the former, was lower by order Q( two than that for the papostor made by the earlier reporter. The reproducibility, which has been an important Problem for this type of thermistors to be industrialized, was improved by introducing pressure in cooling procedure for both carbon and iron thermistors.

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THE SPHERICAL NON-COMMUTATIVE TORI

  • Boo, Deok-Hoon;Oh, Sei-Qwon;Park, Chun-Gil
    • Journal of the Korean Mathematical Society
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    • v.35 no.2
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    • pp.331-340
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    • 1998
  • We define the spherical non-commutative torus $L_{\omega}$/ as the crossed product obtained by an iteration of l crossed products by actions of, the first action on C( $S^{2n+l}$). Assume the fibres are isomorphic to the tensor product of a completely irrational non-commutative torus $A_{p}$ with a matrix algebra $M_{m}$ ( ) (m > 1). We prove that $L_{\omega}$/ $M_{p}$ (C) is not isomorphic to C(Prim( $L_{\omega}$/)) $A_{p}$ $M_{mp}$ (C), and that the tensor product of $L_{\omega}$/ with a UHF-algebra $M_{p{\infty}}$ of type $p^{\infty}$ is isomorphic to C(Prim( $L_{\omega}$/)) $A_{p}$ $M_{m}$ (C) $M_{p{\infty}}$ if and only if the set of prime factors of m is a subset of the set of prime factors of p. Furthermore, it is shown that the tensor product of $L_{\omega}$/, with the C*-algebra K(H) of compact operators on a separable Hilbert space H is not isomorphic to C(Prim( $L_{\omega}$/)) $A_{p}$ $M_{m}$ (C) K(H) if Prim( $L_{\omega}$/) is homeomorphic to $L^{k}$ (n)$\times$ $T^{l'}$ for k and l' non-negative integers (k > 1), where $L^{k}$ (n) is the lens space.$T^{l'}$ for k and l' non-negative integers (k > 1), where $L^{k}$ (n) is the lens space.e.

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Effect of Capsaicin and Silicone Resin Treatment on Inhibition of Thermal Oxidation in Frying Oil (Capsaicin과 규소수지 처리가 튀김유의 가열산화 억제에 미치는 영향)

  • 이미숙;이근보
    • The Korean Journal of Food And Nutrition
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    • v.13 no.6
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    • pp.534-538
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    • 2000
  • Sample frying oil was manufactured from simple mixing treatment of capsicum. butter flavor and silicone resin. the amount were 0.20, 0.15% ($\omega$/$\omega$) and 10 rpm in soybean oil, respectively. This frying oil was confirmed to improving of heat stability as well as removal effect of meat flavor. Frying oil obtained from treatment of capsicum and silicone resin was appeared, acid value and smoke point were 0.301, 232$\^{C}$, than its value in the non-treated soybean oil were 0.385. 220$\^{C}$, respectively, in the case of continuous frying at 185$\pm$2$\^{C}$. These effects were likely to according both anti-oxidation effect of capsicum and inhibition of free fatty acids and smoke production from anti-expansion of surface area in frying oil. Meat flavor and burnt flavor of oil in the frying oil and fried foods were weakened by treating of butter flavor(0.15%, $\omega$/$\omega$), this effect will be produced to new type\`s frying oil product.

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