• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.47-51
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• 1997

The dense sintered bodies of Si/SiC composite with various Si contents could be fabricated by changing the green density in the forming process. The Si/SiC/graphite composites with various graphite contents could be also fabricated by changing a graphite content in the starting composition. Their mechanical and tribological properties were characterized and wear mechanism was also studided. The hardness and strength of the Si/SiC and the Si/SiC/graphite were decreased with increasing the contents of free Si and graphite, respectively. However, the friction coefficient and specific wear rate had no specific relations to their hardness and strength. Adhesion of free Si was a main factor to determine a wear resistance of the Si/SiC composite. In the case of the Si/SiC/graphite, solid lubricationl and liquid reservoir of the graphite particles played the main role of the reduction of the friction force. In the torque test to estimate the possibility of practical of practical applications, the value of torque between the Al2O3 disk and Si/SiC/graphite disk was 1/6 lower compared with two $Al_2O_3$ disks on the basis of 100,000 cycles.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.382-388
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• 1992

Electromigration은 인가된 전계하에서 발생하는 전자풍력에 의한 금속 이온의 현 상이며, 반도체 디바이스의 주요 결함 원인으로 보고되어 왔다. 선폭 1$mu extrm{m}$의 Al-1%Si 금속 박막전도체에 대한 electromigration 수명 실험을 위해 인가된 d.c. 전류밀도는 10MA/cm2 이었고, electromigration에 대한 활성화 에너지 측정을 위한 분위기 온도는 $80^{\circ}C$, 10$0^{\circ}C$ 그리고 $120^{\circ}C$이었다. 평균수명 및 신뢰성에 대한 보호 절연막 효과를 위해 두께 3000 $\AA$의 SiO2 산화막을 sputtering 진공증착기를 사용하여 Al-1%Si 금속 박막 전도체 위에 증착하였 다. 주요 연구 결과는 다음과 같다. Al-1%Si 금속 박막 전도체의 electromigration에 대한 활성화 에너지값은 0.75eV이었고 온도가 증가함에 따라 Al-1%Si의 수명은 감소하였고 신 뢰성은 향상되었다. SiO2 보호막은 electromigration에 대한 저항성을 크게 함으로써 평균수 명을 향상시켰으며, electromigration failure는 lognormal failure distribution은 갖는 것으로 나타났다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.41-47
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• 1981

The sintering characteristics of the SiC-Clay-Kaolin chamotte system were studied by addition of $Al_2O_3$ for the manufacture of silicate-bonded silicon carbide refractories at $1350^{\circ}C$. The sinterbilit of SiC-Binder mixture was measured by apparent porosity and compressive strength. And its mineral compositions were identified with X-ray diffractometer. The following results were obtained; 1) Optimum amount of mixed clay ($\textrm{Al}_2\textrm{O}_3$ 40 wt% mixed) as a binder was about 25wt% 2) Appropriate mixing ratio of mixed Kaolin chamotte ($\textrm{Al}_2\textrm{O}_3$ 40wt% mixed) was about 30wt% in the clay Kaolin chamotte binder. 3) Variation of apparent porosity and compressive strength of sintered SiC-binder mixture fired at $1350^{\circ}C$ were due to the sinterbility of clay.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.199-207
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• 1997

$Al_2O_3$/SiC particulate composites were fabircated by pressureless sintering. The dispersed phase was SiC of which the content was varied from 1.0 to 10 vol%. Three SiC powders having different median diameters from 0.28 $\mu\textrm{m}$ to 1.9 $\mu\textrm{m}$ were used. The microstructure became finer and more uniform as the SiC content increased except the 10 vol% specimens, which were sintered at a higher temperature. Under the same sintering condition, densification as well as grain growth was retarded more severly when the SiC content was higher or the SiC particle size was smaller. The highest flexural strength obtained at 5.0 vol% SiC regardless of the SiC particle size seemed to be owing to the finer and more uniform microstructures of the specimens. Annealing of the specimens at $1300^{\circ}C$ improved the strength in general and this annealing effect was good for the specimens containing as low as 1.0 vol% of SiC. Fracture toughness did not change appreciably with the SiC content but, for the composites containing 10 vol% SiC, a significantly higher toughness was obtained with the specimen containing 1.9$\mu\textrm{m}$ SiC particles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.434-441
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1043.1-1048
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• 1996

알루미나 매트릭스 복합재료를 AIZnMg(7075)-합금의 직접적인 용융산화를 통하여 제조하였다. 충전재료는 17$\mu\textrm{m}$ 크기의 모서리가 둥근 연마재용 SiC 입자를 사용하였다. 산화촉진재 SiO2를 사용한 경우와 사용하지 않은 경우를 비교하였다. 매트릭스 형성 매카니즘과 반응거동을 온도와 SiO2사용량을 중심으로 연구하였으며, 얻어진 AI2O3/SiC/금속 복합재료의 미세구조를 관찰하였다.

• Journal of Ocean Engineering and Technology
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• v.20 no.5 s.72
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• pp.77-81
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• 2006

In this study, monolithic liquid phase sintered SiC (LPS-SiC) was made by the hot pressing method with nano-SiC powder, whose particle size is 30 nm and less on the average. Alumina ($Al_{2}O_{3}$), yttria ($Y_{2}O_{3}$), and silica ($S_{i}O_{2}$) were used for sintering additives. To investigate the effects of $S_{i}O_{2}$, the $Al_{2}O_{3}/Y_{2}O_{3}$ composition was fixed and the ratio of $S_{i}O_{2}$ was changed, with seven different ratios tested. And to investigate the effects of the sintering temperature, the sintering temperature was changed, with $1760^{\circ}C,\;1780_{\circ}C$, and $1800_{\circ}C$ being used with a $S_{i}O_{2}$ ratio of 3 wt%. The materials were sintered for 1 hour at $1760^{\circ}C,\;1780^{\circ}C$ and $1800^{\circ}C$ under a pressure of 20 MPa. The effects on sintering from the sintering system used, as well as from the composition of the sintering additives, were investigated by density measurements. Mechanical properties, such as flexural strength, were investigated to ensure the optimum conditions for a matrix of SiCf/SiC composites. Sintered densityand the flexural strength of fabricated LPS-SiC increased with an increase in sintering temperature. Particularly, the relative density of a sintered body at $1800^{\circ}C$ with a non-content of $S_{i}O_{2}$, a specimen of AYSO-1800, was 95%. Also, flexural strength was about 750MPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.55-59
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• 2000

In this study, materials for spectacle lens cutting were fabricated by hot-pressing and annealing SiC powders with $Al_2O_3$ and $Y_2O_3$. A microstructure that consisted of uniformly distributed, large SiC grains and elongated SiC grains was developed by using ${\alpha}$-SiC powders. The microstructure was observed by scanning electron microscope(SEM). By hot-pressing and subsequent annealing, elongated ${\beta}$-SiC grains were grown via ${\beta}{\rightarrow}{\alpha}$ phase. This is caused the crack deflection as toughening mechanism. Typical hardness and fracture toughness of materials for spectacle lens cutting were 13.3 GPa and $4.8MPa{\cdot}m^{1/2}$, respectively.