Sialon $Si_3N_4$ and SiC powders and ceramics were prepared from Korean natural resources. The properties of the powders and sintered ceramics obtained in this work are considered to be comparable to those of foreign articles.

Silicon carbide coating has been studied using a graphite substrate, a mixture of tetramethylsilane and hydrogen or argon at deposition temperature (T) of 950 to $1200^{\circ}C$ total pressure of 20 to 50 torr and carrier gas flow rate of 0 to 901/h. Deposition kinetic study has shown that a transition, from a surface reaction limited process to a diffusion limited one, takes place near $1100^{\circ}C$. Deposition rate depends directly upon the experimental parameters. The influence of the main process parameters is also discussed to relate the physiochemical properties of the coating to the deposition conditions.

The thick and thin film hybrid microcircuit technologies are reviewed. The materials, te processing conditions and the final properties of thick and thin film conductors, resistors dielectrics are discussed.

The sintering behavior of silver-oxide glass composite thick-film has been studied with varing glass content. It is shown that during heat treatment glass became liquid phase to deeply affect the microstructure development of the silver particles and to control the physical properties of the thick-films. As glass content increased, the initial repacking of silver particles took place rapidly but the homogeneities of the microstructure showed different features. When the glass content was over some range, the silver particles exuded glass to decrease net energy and glass formed liquid pools separated from the solid skeletons. Finally the relations between the microstructures and electrical properties of the thick-film were discussed.

High quality monocrystalline $\beta$-SiC thin films were grown via two-step process of conversion of the Si(100) surface by reaction with $C_2H_4$ and the subsequent chemical vapor deposition (CVD) at $1360^{\circ}C$ and 1 atm total pressure. Four dopants, B and Al and p-type, and N and P for n-type, were also incorporated into monocrystalline $\beta$-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped $\beta$-SiC thin films and to investigate the effects of dopants on the structure of the doped $\beta$-SiC thin films. The changes in the shape of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples, The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at the 850 $cm^{-1}$ respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.