In this paper, an incoherent imaging of a conducting cylinder illuminated by the single-frequency time-harmonic plane wave is obtained via the back-projections of the intensity patterns of the forward total electric field scattered from this object in the circular rotational measurement configuration. The pheonmenon that interference fringes generated in the itesity patterns is removed in the back-projection process is interpreted numerically. This imaging method is validated by imagining conducting circular cylinders and the conditions to ge beter image are investigated.

An analysis of the microstripline is started as an assumption of the axial & transveral current distribution. Applying the boundary conditions to the scalar wave equations of a electric & magnetic potential, the two simultaneous coupled integral equations are produced. The electronmagnetic fields in microstrip line can be obtained by solving these two coupled integral equaltion. In general, either a numerical analysis method or a Galerkin method was used to solve them. In this paper, a residue theorem is proposed to solve them. The electromagnetic fields are expressed as integral equations for LSE and LSM mode in the spectral domain. Applying a residue theorem to the Fourier transformed equation and Fourier inverse transformed equation which is necessary for interchanging the space domain and the spectral domain, the electromagnetic fields are expressed as algebraic equations whichare relatively easier to handle. the distributions of the electromagnetic field are shown at the range of -5w/2.leq.x.leq.5w/2, 0.lep.y.leq.4h for z=0. It agrees well with the results of the Quasi-TEM mode analysis.

This paper presents a design methodology for magnetically tunable X-band E-plane type waveguide filters. The proposed design is based on using of quarter wavelength transmission line for compensating the negative length transmission line of end K-inverters of E-plane type waveguide filters. The derived formulae are applied for initial design and the correction method is also provided for final design by considering the frequency dependent characteristic of K-inverters. The analysis results of E-plane pype waveguide structure loaded with ferrite slab are obtained using the edge based finite element method including higher order mode effecets. It is shown that the unilateral finline E-plane type waveguide filter as well as the bilateral finline E-plane type waveguide filter achieves the the manetically tunable characteristic. The X-band experimantal results for bilateral and unilateral finline E-plane type waveguide filters agree well with the simulated data.

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization.The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM 9Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$_{6}$ plasma treatment sulbsequent to the etching process preventas the corrosion effectively in the pressure of 300 mTorr. It is found that the cholrine atoms on the etched surface are not substituted for fluorine atoms during SF$_{6}$ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$_{6}$ treated surface and suppresses the corrsion sucessfully.fully.

For applicating to 10-Gbit/s optical transimission systems, we have designed and fabricated a laser driver IC with extremely-high-operation-frequencies using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and have investigated its performances. Circuits design andsimulation were performed using SPICE and LIBRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5*10 .mu.m$^{2}$, used for the circuit fabrication, exhibited cutoff frequency of 63 GHz andmaximum osciallation frquency of 50 GHZ. After fabrication of MMICs, we observed the very wide bandwidth of DC~18 GHz and the S$_{21}$ gain of 17 dB for a laser driver IC from the on-wafer measurement. Metal-packaged laser driver IC showed the excellent eye opening, the modulation currents of 32 mA, the rise/fall time of 40 ps, measured at the data rates of 10-Gbit/s.

This paper proposes a new addition algorithm to improve the addition speed which is one of the important factors for data path functions. We have designed a fast 64-bit adder utilizing al dynamic chain architecture based on the proposed Sum-Selector Generation (SSG) algorithm. Proposed adder is designed with pass-transistor logicto achieve a high speed operation in low voltage circumstance. Realized 64-bit adder with 0.8.mu.m CMOS double-metal process technology has been fully tested. it operates at 185 MHz with 5.0V and chip area occupies 3.66mm$^{2}$. It is also demonstrated that designed adder operates even at 2.0V power supply condition.

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

In order to simulataneously achieve surface type conversion and sulfur passivation of p-type InP, a Ha$_{2}$S plasma dry passivation technique was firstly proposed and successfully applied to the fabrication of ITO/InP solar cells. This new technique was expected to improve the performance of solar cells. The devices, fabricated by changing the process parameters such as RF power and plasma exposure time, were characterized and PL measurements were performed to investigate the passivation effects. As a result, H$_{2}$S plasma treated solar cells demonstrated better performance than that of (NH$_{4}$)$_{2}$S$_{x}$ treated ones.s.

Discretization method and numerical calculations of wigner function to introduce the influence of spatially varying effective mass as well as to reduce the error involved in the conventional discretization model are presented. Using this new discrete model, the transient responses of resonant-tunneling-diode are analyzed.

Polarization mode converters have been produced by utilizing Ti:LiNbO$_{3}$ channel waveguide and strain-optic effect. Shear strain for periodic perturbations of optical channel waveguides and phase matching can be obtained by an evaporated periodic SiO$_{2}$ thin film at 300.deg. C. The electrodes located on the either side of waveguide provide a means to electro-optically tune the wavelength for maximum polarization conversion via the electrooptic effect. The maximum conversion effeciency was observed at 21.deg. C for V=0 and 46.deg. C for V=30V aro the device having 7 .mu.m waveguide wiith and 350 periodic pads. The dependence of the number of pads on conversion efficiency was observed experimentally.fficiency was observed experimentally.

We analyzed dynamic-strain perturbations applied to a fiber Bragg grating. The fiber Mach-Zehnder interferometer was used, and by analyzing the interference signal wecould obtain the frequency and relative amplitude information of the dynamic-perturbation. The minimum detectable dynamic-strain using the system was ~9.5 nstrain RMS/.root.(Hz) at 500 Hz. Also we proposed and demonstrated a new method which uses a temperature-discriminating dual-trating sensor head. With the method, we could measure the dynamic -strain as well as static-static-strain even for the case in which the optical pathe difference modulation was applied.

Planar graded index optical waveguides have been formed by Ag$^{+}$ ion exchange in the BK7 optical glass. The experimental results of diffusion and modal characteristics of Ag$^{+}$-Na$^{+}$ exchanged BK7 glass waveguides are presented. Measurements of the mode indices have been measured. We found the relations between the process and device parameters such as the diffusion depth and the square root of the diffusion time, diffusion coefficient and diffusion temperature, and diffusion ion concentration and surface index change. A theoretical gaussian function refractive index profile matched best with the measured data for all the guided modes. The empirical relations between the process and the device parameters are derived and subsequently used to formulate a systematic procedure for fabricating singlemode and multimode waveguides.uides.