Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Farbrication and perfomance of a laser driver IC with broad bandwidth of DC - 18 GHz

DC - 18GHz의 광대역 레이저 구동회로 제작 및 특성

  • 박성호 (한국전자통신연구원 반도체연구단) ;
  • 이태우 (한국전자통신연구원 반도체연구단) ;
  • 기현철 (경원대학교 전자공학과) ;
  • 김충환 (한국전자통신연구원 반도체연구단) ;
  • 김일호 (한국전자통신연구원 반도체연구단) ;
  • 박문평 (한국전자통신연구원 반도체연구단)
  • Published : 1998.01.01
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Abstract

For applicating to 10-Gbit/s optical transimission systems, we have designed and fabricated a laser driver IC with extremely-high-operation-frequencies using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and have investigated its performances. Circuits design andsimulation were performed using SPICE and LIBRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5*10 .mu.m$^{2}$, used for the circuit fabrication, exhibited cutoff frequency of 63 GHz andmaximum osciallation frquency of 50 GHZ. After fabrication of MMICs, we observed the very wide bandwidth of DC~18 GHz and the S$_{21}$ gain of 17 dB for a laser driver IC from the on-wafer measurement. Metal-packaged laser driver IC showed the excellent eye opening, the modulation currents of 32 mA, the rise/fall time of 40 ps, measured at the data rates of 10-Gbit/s.

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