This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.

For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

In this paper, we report the experimental setup and characterization of experimental results for the HTS antenna. The constructions of experimental setup must be fabricated, cautiously. We constructed the cryostat made of 3 stages which consists of radome, vacuum stage and helium refrigerator for the HTS antenna. The HTS antenna was mounted to cryostat and various characteristics were measured at room temperature and liquid nitrogen temperature, 77 K. Also the results for the HTS antenna and the gold antenna were compared in terms of reflection coefficient, E-plane and H-plane radiation pattern, input impedance, SWR and efficiency. It appeared that the HTS antenna was superior to gold counterpart over the all characteristics.

In this paper, we present new method to analyze the space charge effect on the electrical characteristics in polymer. It is new measurement system and analysis method that have not reported yet. By using this measurement system, we make observation to space charge accumulated on the surface of polymer at AC voltage, so it is examined to verify the correlation of space charge and partial discharge(PD). In the result of experiment, it can be known that PD pattern is related more closely to space charge accumulated on the surface of polymer than in the inner part, and applied voltage in the air is ruled by this dynamic partial discharge. Also, above critical voltage, the space charge accumulated on the surface of polymer have no effect to the magnitude of PD and the applied voltage in the air. It has been known that the electric power of the dissolution system is proportioned to the frequency and the magnitude of applied voltage, but we can know by this result of the experiment that the efficiency of the dissolution is not related to the rise of voltage above critical voltage.

PZT thin films(3500 ) have been prepared onto $Pt/Ti/SiO_2/Si$ substrates with a RF magnetron sputtering system using PB1.05(Zr0.52,Ti0.48)O3 ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at $700^{\circ}C$ for 60 seconds were like these remanent polarization were $12.1 \muC/cm^2$, coercive field were 110 kV/cm, leakage current density were $4.1\times10-7 A/cm^2,\; \varepsilonr=442,$ and remanent polarization were decreased by 22% after 1010 cycles, respectively.

A copper-tungsten sintered alloy(WCu) has been friction-welded to a tough pitch copper (Cu) in order to investigate friction weldability. The maximum tensile strength of the SWu-Cu friction welded joints had cp to 96% of those of the Cu base metal under the condition of friction time 0.6sec, friction pressure 45MPa, upset pressure 125MPa and upset time 5.0sec. And it is confirmed that the tensile strength of friction welded joints are influenced highly by upset pressure rather than friction time. And it is considered that mixed layer was formed in the Cu adjacent side to the weld interface, W particles included in mixed layer induced fracture in the Cu adjacent side to the weld interface and also, thickness of mixed layer was reduced as upset pressure increase.

Closed-form expressions for the temperature dependent breakdown voltage and the on-resistance of the Si power MOSFETs were derived by employing effective temperature dependent ionization coefficient for electrons and holes. The breakdown voltage increases by 20% and the on-resistance increases 2 times when the temperature increases from 300 K to 423 K. The analytic results normalized to the values at 300 K show good agreement with the experimental data of Motorola within 3.5% and 7% for the breakdown voltage and the on-resistance, respectively.

In this paper, we propose the use of stochastic finite element method, that is popularly employed in mechanical structure analysis, for more practical designing purpose of RF device. The proposed method is formulated based on the vector finite element method cooperated by pertubation analysis. The method utilizes sensitivity analysis algorithm with covariance matrix of the random variables that represent for uncertain physical quantities such as length or various electrical constants to compute the probabilities of the measure of performance of the structure. For this computation one need to know the variance and covariance of the random variables that might be determined by practical experiences. The presenting algorithm has been verified by analyzing several device with different be determined by practical experiences. The presenting algorithm has been verified by analysis several device with different measure of performanes. For the convenience of formulation, two dimensional analysis has been performed to apply it into waveguide with dielectric slab. In the problem the dielectric constant of the dielectric slab is considered as random variable. Another example is matched waveguide and cavity problem. In the problem, the dimension of them are assumed to be as random variables and the expectations and variances of quality factor have been computed.