Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A study of Automotive ESD Protection Circuit with improved Current Driving characteristics Using LVTSCR Structure

LVTSCR 구조를 이용한 향상된 전류구동 특성을 갖는 자동차용 ESD 보호회로 연구

  • Bo-Bae Song (DB HiTek) ;
  • Young-Chul Kim (DB HiTek)
  • 송보배 ;
  • 김영철
  • Received : 2024.06.07
  • Accepted : 2024.06.24
  • Published : 2024.06.30
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Abstract

In this paper, we propose an ESD protection circuit that applies structural changes to LVTSCR, a general low-voltage ESD protection circuit, to improve the current driving capability (IEC-ESD) characteristics of the ESD protection circuit. Power consumption was minimized by separating the area where the electric field and ESD current path are formed in the LVTSCR structure, and the electrical characteristics were analyzed and current driving characteristics were improved. Structural problems resulting from deterioration of system level characteristics were analyzed through simulation, and the characteristics were verified by reflecting this. The electrical characteristics of the proposed ESD protection circuit were verified using a TCAD simulator and analyzed through HBM modeling and system level modeling. In addition, silicon production and HBM 10kV characteristics were verified through DB-Hitek 0.18um BCD process.

본 논문에서는 ESD 보호회로의 전류구동 특성을 향상시키기 위해 일반적인 저전압용 ESD 보호회로인 LVTSCR의 구조적 변경을 적용한 ESD 보호회로를 제안한다. LVTSCR 구조에서의 electric field와 ESD 전류 경로가 형성 되는 영역을 분리하여 전력 소모를 최소화 하였으며 이에 대한 전기적 특성을 분석하고 전류 구동 특성을 개선하였다. 시뮬레이션을 통한 System-level 특성 저하에 기인하는 구조적인 문제를 분석하였으며 이를 반영하여 특성을 검증하였다. 제안된 ESD 보호회로의 전기적 특성은 TCAD 시뮬레이션을 통해 검증하였으며 HBM 모델링 및 System-level 모델링을 통해 분석하였다. 또한, DB-Hitek사의 0.18um BCD 공정을 통해 silicon 제작 및 HBM 10kV 특성 검증하였다.

Keywords

References

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