반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

4H-SiC PiN과 SBD 다이오드 Deep Level Trap 비교 분석

Deep Level Trap Analysis of 4H-SiC PiN and SBD Diode

  • 신명철 (광운대학교 전자재료공학과) ;
  • 변동욱 (광운대학교 전자재료공학과) ;
  • 이건희 (광운대학교 전자재료공학과) ;
  • 신훈규 (포항공과대학교 나노융합기술원) ;
  • 이남석 (포항공과대학교 나노융합기술원) ;
  • 김성준 (포항공과대학교 나노융합기술원) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Shin, Myeong-Cheol (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Byun, Dong-Wook (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Geon-Hee (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Hoon-Kyu (National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH)) ;
  • Lee, Nam-Suk (National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH)) ;
  • Kim, Seong Jun (National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH)) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2022.06.08
  • 심사 : 2022.06.23
  • 발행 : 2022.06.30
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초록

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

키워드

과제정보

This work was supported by the GRDC program through the National Research Foundation (NRF) grant funded by the MSIT of Korea (NRF-2018K1A4A3079552 and 2021R1F1A1057620), The Ministry of Trade and a Research Grant form Kwangwoon University in 2022.

참고문헌

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