한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제35권1호
  • /
  • Pages.44-49
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  • 2022
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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다중준위 상변환 메모리를 위한 Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 구조의 전기적 특성 연구

A Study on the Electrical Characteristics of Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 Structure for Multi-Level Phase Change Memory

  • 오우영 (전남대학교 신화학소재공학과) ;
  • 이현용 (전남대학교 화학공학부)
  • Oh, Woo-Young (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Lee, Hyun-Yong (School of Chemical Engineering, Chonnam National University)
  • 투고 : 2021.08.23
  • 심사 : 2021.09.02
  • 발행 : 2022.01.01
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초록

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge2Sb2Te5/Ti/W-doped Ge8Sb2Te11, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge2Sb2Te5 and W-doped Ge8Sb2Te11 films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge8Sb2Te11 film was about 1 order larger than that of Ge2Sb2Te5 film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge2Sb2Te5 (150 nm)/Ti (20 nm)/W-Ge8Sb2Te11 (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

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과제정보

이 논문은 전남대학교 연구년 연구비 지원에 의하여 연구되었음(과제번호: 2019-3842).

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