반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

병렬 플라즈마 소스를 이용한 마이크로 LED 소자 제작용 GaN 식각 공정 시스템 개발

GaN Etch Process System using Parallel Plasma Source for Micro LED Chip Fabrication

  • Son, Boseong (Department of Electronic Engineering, Yeungnam University) ;
  • Kong, Dae-Young (Ultech Co., Ltd.) ;
  • Lee, Young-Woong (Department of Electronic Engineering, Yeungnam University) ;
  • Kim, Huijin (Department of Electronic Engineering, Yeungnam University) ;
  • Park, Si-Hyun (Department of Electronic Engineering, Yeungnam University)
  • 투고 : 2021.08.20
  • 심사 : 2021.09.16
  • 발행 : 2021.09.30
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초록

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl3/Cl2 gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

키워드

과제정보

본 논문은 한국산업단지공단의 지원(2019년도 산업집적지경쟁력강화사업 생산기술사업화 지원사업(이전기술 사업화부문), RDK19005)을 받아 수행된 연구 결과임. 또한 이 성과는 2021 년도 정부(과학기술정보통신부)의 재원으로 한국연구재단 및 한국연구재단 - 현장맞춤형 이공계 인재양성 지원사업의 지원을 받아 수행된 연구임(No. 2019R1A2C1089080), (No. 2019H1D8A1105630).

참고문헌

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