반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

가스 유량 변화에 따른 식각 공정 결과: VI Probe 활용 가능성 제안

Gas Flow Rate Dependency of Etching Result: Use of VI Probe for Process Monitoring

  • 송완수 (명지대학교 전자공학과) ;
  • 홍상진 (명지대학교 전자공학과)
  • Song, Wan Soo (Department of Electronics Engineering, Myongji University) ;
  • Hong, Sang Jeen (Department of Electronics Engineering, Myongji University)
  • 투고 : 2021.08.18
  • 심사 : 2021.09.16
  • 발행 : 2021.09.30
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초록

VI probe, which is one of various in-situ plasma monitoring sensor, is frequently used for in-situ process monitoring in mass production environment. In this paper, we correlated the plasma etch results with VI probe data with the small amount of gas flow rate changes to propose usefulness of the VI probe in real-time process monitoring. Several different sized contact holes were employed for the etch experiment, and the etched profiles were measured by scanning electron microscope (SEM). Although the shape of etched hole did not show satisfactory relationship with VI probe data, the chamber status changed along the incremental/decremental modification of the amount of gas flow was successfully observed in terms of impedance monitoring.

키워드

과제정보

본 연구는 한국산업기술진흥원 월드클래스300 프로젝트기술개발(G02P10810001102)로 수행된 연구이며, 플라즈마 발생장치에 관한 기술적 도움을 주신 최장규 박사와 명지대학교 반도체공정진단연구소 민우식 박사에게 감사의 말씀을 드립니다.

참고문헌

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