Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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A study on the nitridation of GaN crystal growth by HVPE method

HVPE 법을 활용한 GaN 성장 시 질화처리에 관한 연구

  • Lee, Seung Hoon (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Oh, Nuri (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Yi, Sung Chul (Department of Chemical Engineering, Hanyang University) ;
  • Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Seong Kuk (AMES Micron Co. Ltd.) ;
  • Yang, Jae Duk (AMES Micron Co. Ltd.) ;
  • Park, Jae Hwa (AMES Micron Co. Ltd.)
  • 이승훈 (한양대학교 신소재공학과) ;
  • 이주형 (한양대학교 신소재공학과) ;
  • 이희애 (한양대학교 신소재공학과) ;
  • 오누리 (한양대학교 신소재공학과) ;
  • 이성철 (한양대학교 화학공학과) ;
  • 강효상 (한양대학교 신소재공학과) ;
  • 이성국 (에임즈마이크론(주)) ;
  • 양재득 (에임즈마이크론(주)) ;
  • 박재화 (에임즈마이크론(주))
  • Received : 2019.08.08
  • Accepted : 2019.08.14
  • Published : 2019.08.31
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Abstract

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.

HVPE는 GaN 단결정의 제조 방법 중 하나로 빠른 성장 속도가 장점인 상업적으로 널리 사용되는 성장 방법이다. HVPE 법에 의한 GaN 단결정 성장은 여러 공정으로 이루어지며, 특히 GaN 성장 전 기판의 질화 처리는 성장되는 GaN 단결정 품질에 상당한 영향을 미친다. 본 연구에서는 사파이어 기판 위에 GaN 단결정 성장 시 기판의 질화처리가 성장되는 GaN 단결정 품질에 미치는 영향을 알아보고자 하였다. 질화 처리를 제외한 다른 성장 조건은 동일하게 하였고 질화처리 시 기판에 공급되는 가스 유량을 다양하게 변화시킨 후 GaN 박막을 성장시키고, 성장된 GaN의 표면 특성평가를 통하여, HVPE 법에서의 질화처리 효과를 고찰하여 보고자 하였다.

Keywords

References

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