Fig. 1. Cross-sectional illustration of Ga2O3 SBD with floating metal guard rings. 그림 1. 플로팅 금속 가드링 구조을 갖는 Ga2O3 SBD 단면 모식도
Fig. 2. Breakdown characteristics as a function of guard ring spacing (SGR ). 그림 2. SGR에 따른 항복 특성 변화
Fig. 3. Electric field and potential distribution along the surface as a function of guard ring spacing (SGR ). 그림 3. SGR 에 따른 표면에서의 전계 및 포텐셜 분포
Fig. 4. Breakdown characteristics as a function of the number of guard rings (NGR ). 그림 4. NGR 에 따른 항복 특성 변화
Fig. 5. Electric field and potential distribution along the surface as function of guard ring number (NGR ). 그림 5. NGR 에 따른 표면에서의 전계 및 포텐셜 분포
Fig. 6. (a) Breakdown voltage as functions of the number of guard rings (NGR ) and guard ring width (WGR ) and (b) breakdown voltage versus guard ring width (NGR = 5 = 5). 그림 6. (a) NGR = 5와 WGR 에 따른 항복전압 변화. (b) WGR 에 따른 항복전압 (NGR = 5)
Fig. 7. Electric field and potential distribution as a function of length of guard ring metals(WGR ). 그림 7. WGR 변화에 따른 소자내의 전계 및 포텐셜 분포
Fig. 8. Forward current-voltage characteristics with and without guard rings. 그림 8. 가드링 구조 유무에 따른 정전류-전압 특성
Table 1. Material properties of Ga2O3 in simulation. 표 1. 시뮬레이션에 사용된 Ga2O3의 물성
References
- H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdiov, and M. Burns, "Large-band-gap SiC, III-VI nitride, and II-VI ZnSe-based Semiconductor device technologies," Journal of Applied Physics, vol. 76, no. 3, pp. 1363-1398, 1994. DOI: 10.1063/1.358463
- M. Bhatangar, Peter K. McLarty, and Baliga, "Silicon Carbide High-Voltage (400 V) Schottky Barrier Diodes," IEEE ELECTRON DEVICE LETTERS, Vol. 13, no. 10, pp. 501-503, 1992. DOI: 10.1109/55.192814
-
Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu, Akito Kuramata, Takekazu Masui and Shigenobu Yamakoshi, "Recent progress in
$Ga_2O_3$ power devices," Semiconductor Science and Technology, Vol. 31, no. 3, P.034001, 2016. DOI: 10.1088/0268-1242/31/3/034001 -
J. B. Varley, J. R. Weber, A. Janotti, and C. G. Van de Walle, "Oxygen vacancies donor impurities in
${\beta}$ -$Ga_2O_3$ ," Applied Physics Letters, Vol. 97, no. 14, P. 142106, 2010. DOI: 10.1063/1.3499306 -
Ranjith K. Ramachandran, Jolien Dendooven, Jonas Btterman, Sreeprasanth Pulinthanathu Sree, Drik Poelman, Johan A. Martens, Hilde Poelman and Christophe Detavernier, "Plasma enhanced atomic layer deposition of
$Ga_2O_3$ thin films," Journal of Materials Chemistry A, Vol. 2, pp. 19232-19238, 2014. DOI: 10.1039/c4ta90219j -
Kanika Arora, Neeraj Goel, Mahesh Kumar, and Muskesh Kumar, "Ultrahigh Performance of Self-Powered
${\beta}$ -$Ga_2O_3$ Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer," ACS Photonics, Vol. 5, no. 6, pp. 2391-2401, 2018. DOI: 10.1021/acsphotonics.8b00174 -
J.-H, Choi, C.-H. Cho, H.-Y. Cha, "Design consideration of high voltage
$Ga_2O_3$ vertical Schottky barrier diode with field plate," Results in Physics, Vol. 9, pp. 1170-1171, 2018. DOI: 10.1016/j.rinp.2018.04.042 - Junsung Park, Sung-Min Hong, "Simulation Study of Enhancement Mode Multi-Gate Vertical Gallium Oixde MOSFETs," Journa of Solid State Science and Technology, Vol. 8, no. 7, pp. 3116-3121, 2019. DOI: 10.1149/2.0181907jss
-
Masahiro Orita, Hiromichi Ohta, Msashiro Hirano, and Hideo Hosono, "Deep-ultra transparent conductive
${\beta}$ -$Ga_2O_3$ thin films," Applied Physics Letters, Vol. 77, no. 25, p. 4166, 2000. DOI: 10.1063/1.1330559 - Hitoshi Umezawa, "Recent advances in diamond power semiconductor devices," Materials Science in Semiconductor Processing, Vol. 78, pp. 147-156, 2018. DOI: 10.1016/j.mssp.2018.01.007
-
Jiancheng Yang, F. Ren, Marko Tadjer, S. J. Pearton, and A. Kuramata, "2300V Reverse Breakdown Voltage
$Ga_2O_3$ Schottky Rectifiers," ECS Journal of Solid State Science and Technology, Vol. 7, no. 5, Q92-Q96, 2018. DOI: 10.1149/2.0241805jss -
Neil Moser, Jonathan McCandless, Antonio Crespo, Kevin Leedy, Andre Green, Adam Neal, Shin Mou, Elaheh Ahmadi, James Speck, Kelson chabak, Nathalia Peixoto, and Gregg Jessen, "Ge-Doped
${\beta}$ -$Ga_2O_3$ ," IEEE ELECTRON DEVICE LETTERS, Vol. 38, no. 6, pp. 775-778, 2018. DOI: 10.1109/LED.2017.2697359 -
Nan Ma, Nicholas Tanen, Amit Verma, Zhi Guo, Tengfei Luo, Huili (Grace) Xing, and Debdeep Jena, "Intrinsic electron mobility limits in
${\beta}$ -$Ga_2O_3$ ," Applied Physics Letters, Vol. 109, no. 21, p. 212101, 2016. DOI: 10.1063/1.4968550 - C. E. Weitzel, J. W. Palmour, C. H. Carter, K. Moore, K. K. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, "Silicon carbide high-power devices," IEEE Transactions on Electron Devices, Vol. 43, no. 10, pp. 1732-1741, 1996. DOI: 10.1109/16.536819
-
Krishnendu Chosh, and Uttam Singisetti "Impact ionization in
${\beta}$ -$Ga_2O_3$ ," Journal of Applied Physics, vol. 124, no. 8, p. 085707, 2018. DOI: 10.1063/1.5034120