마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제26권4호
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  • Pages.113-118
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  • 2019
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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Growth of α-Ga2O3 Epitaxial Films on Al2O3 by Halide Vapor Pressure Epitaxy

  • Lee, Daejang (UJL Inc.) ;
  • Cha, An-Na (School of Applied Chemical Engineering, Chonnam National University) ;
  • Park, Junseong (School of Applied Chemical Engineering, Chonnam National University) ;
  • Noh, Hogyun (School of Applied Chemical Engineering, Chonnam National University) ;
  • Moon, Youngboo (UJL Inc.) ;
  • Ha, Jun-Seok (School of Applied Chemical Engineering, Chonnam National University)
  • 투고 : 2019.12.16
  • 심사 : 2019.12.28
  • 발행 : 2019.12.30
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초록

In this study, we investigated the growth of single-crystallinity α-Ga2O3 thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga2O3. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga2O3 thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 104 cm-2.

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참고문헌

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