References
- A. S. Sedra and K. C. Smith, Microelectronic Circuits, 5th ed. New York: Oxford, 2004.
- H. M. Hashemian, "Maintenance of Process Instrumentation in Nuclear Power Plants," Springer Press, 2006.
- G. C. Messenger and M. S. Ash, "The Effects of Radiation On Electronic Systems," Springer Press, 1992.
- T. R. Oldham and F. B. Mclean, "Total Ionizing Dose Effects in MOS Oxides and Devices," IEEE Trans. Nul. Sci., vol. 50, no. 3, pp. 483-496, Jun. 2003. https://doi.org/10.1109/TNS.2003.812927
- H. J. Barnaby, "Total-Ionizing-Dose Effects in Modern CMOS Technologies," IEEE Trans. Nul. Sci., vol. 53, no. 6, pp. 3103-3120, Dec. 2006.
- T. R. Oldham and A. J. Lelis, "Post-Irradiation Effects in Field Oxide Isolation structures," IEEE Trans. Nul. Sci., vol. 34, no. 6, pp. 1184-1189, Dec. 1987. https://doi.org/10.1109/TNS.1987.4337450
- D. M. Fleetwood, P. S. Winokur, R. A. Reber, T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt and L. C. Riewe, "Effects of oxide traps, interface traps, and 'border traps' on metal-oxide-semiconductor devices," J. Appl. Phys., vol. 73, pp. 5058-5074, May 1993. https://doi.org/10.1063/1.353777
- S. C. Oh, N. H. Lee, and H. H. Lee, "The Study of Transient Radiation Effects on Commercial Electronic Devices", Trans. KIEE, vol. 61, no. 10, pp. 1448-1453, Oct. 2012.
- J. Y. Kim, N. H. Lee, H. K. Jung, S. C. Oh, "The study of radiation hardened common sensor circuits using COTS semiconductor devices for the nuclear power plant", Trans. KIEE, vol. 63, no. 9, pp. 1248-1252, Sep. 2014.
- W. J. Snoeys, "A New NMOS Layout Structure for Radiation Tolerance," IEEE Trans. Nul. Sci., vol. 49, no. 4, Aug. 2002.
- Li Chen and D. M. Gingrich. "Study of N-Channel MOSFETs with an Enclosed-Gate Layout in a 0.18um CMOS technology," IEEE Trans. Nul. Sci., vol. 52, no. 4, pp. 861-867, Oct. 2005. https://doi.org/10.1109/TNS.2005.852652
- M. S. Lee and H. C. Lee, "Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit", IEEE Trans. Nul. Sci., vol. 60, no. 4, pp. 3084-3091, Aug. 2013.
- Y. Li et al. "Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX," IEEE Trans. Nucl. Sci., vol. 48, pp. 2146-2151, Dec. 2001. https://doi.org/10.1109/23.983187
- M. W. Lee, N. H. Lee, S. H. Jeong, S. M. Kim and S. I. Cho, "Implementation of a radiation-hardened I-gate n-MOSFET and analysis of its TID(Total Ionizing Dose) effects" Journal of Electrical Engineering & Technology, vol. 12, pp. 1619-1626, Jun. 2017.
- N. Saks, M. Ancona and J. Modolo, "Generation of interface states by ionizing radiation in very thin MOS oxides," IEEE Trans. Nucl. Sci., vol. 33 no. 6, pp. 1185-1190, Nov. 1986. https://doi.org/10.1109/TNS.1986.4334576