한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제31권3호
  • /
  • Pages.129-134
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  • 2018
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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이온성 첨가제 도입을 통한 고이동도 고분자 반도체 특성 구현과 유기전계효과트랜지스터 및 유연전자회로 응용 연구

High-Mobility Ambipolar Polymer Semiconductors by Incorporation of Ionic Additives for Organic Field-Effect Transistors and Printed Electronic Circuits

  • 이동현 (부경대학교 인쇄정보공학과) ;
  • 문지훈 (부경대학교 인쇄정보공학과) ;
  • 박준구 (부경대학교 인쇄정보공학과) ;
  • 정지윤 (부경대학교 인쇄정보공학과) ;
  • 조일영 (부경대학교 인쇄정보공학과) ;
  • 김동은 (부경대학교 인쇄정보공학과) ;
  • 백강준 (부경대학교 인쇄정보공학과)
  • Lee, Dong-Hyeon (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Moon, Ji-Hoon (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Park, Jun-Gu (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Jung, Ji Yun (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Cho, Il-Young (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Kim, Dong Eun (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Baeg, Kang-Jun (Department of Graphic Arts Information Engineering, Pukyong National University)
  • 투고 : 2018.01.16
  • 심사 : 2018.01.22
  • 발행 : 2018.03.01
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초록

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

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참고문헌

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