마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제25권4호
  • /
  • Pages.9-15
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  • 2018
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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전력반도체 접합용 천이액상확산접합 기술

Transient Liquid Phase Diffusion Bonding Technology for Power Semiconductor Packaging

  • 이정현 (서울시립대학교 신소재공학과) ;
  • 정도현 (경북테크노파크 경량소재융복합기술센터) ;
  • 정재필 (서울시립대학교 신소재공학과)
  • Lee, Jeong-Hyun (Department of Materials Science and Engineering, University of Seoul) ;
  • Jung, Do-hyun (Lightweight Materials Technology Center, Gyeongbuk Technopark) ;
  • Jung, Jae-Pil (Department of Materials Science and Engineering, University of Seoul)
  • 투고 : 2018.12.11
  • 심사 : 2018.12.28
  • 발행 : 2018.12.31
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초록

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.

키워드

MOKRBW_2018_v25n4_9_f0001.png 이미지

Fig. 1. Schematic diagram of power semiconductor.

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Fig. 2. Schematic diagram of warpage during heating and cooling.

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Fig. 3. Schematic of transient liquid phase bonding process.39)

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Fig. 4. Cross-sectional microstructure of the joint bonded with Sn-Cu.

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Fig. 5. Schematic drawing showing the mechanism for the TGB process.

Table 1. Calculated surface tension of solders.24)

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