The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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The Calculation of the Energy Band Gaps and Optical constants of Zincblende GaAs1-X NX on Temperature and Composition

온도 및 조성비 변화에 따른 질화물계 화합물 반도체 GaAs1-X NX의 에너지 밴드갭과 광학상수 계산

  • Chung, Ho-Yong ;
  • Kim, Dae-Ik (School of Electrical, Electronic Communication, and Computer Engineering, Chonnam National University)
  • 정호용 (전남대학교 의공학과) ;
  • 김대익 (전남대학교 전기전자통신컴퓨터공학부)
  • Received : 2018.09.17
  • Accepted : 2018.12.15
  • Published : 2018.12.31
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Abstract

The energy band gaps and the bowing parameters of zincblende $GaAs_{1-x}N_x$ on the variation of temperature and composition are determined by using an empirical pseudo-potential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter is calculated as 15eV and the energy band gaps are decreasing rapidly in $GaAs_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of high-frequency dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

본 연구에서는 무질서 효과가 고려된, 새로이 가정한 가상 결정 근사법을 갖는 empirical pseudopotential method를 사용하여 온도와 조성비 변화에 따른 3원계 질화물계 화합물 반도체 $GaAs_{1-X}N_X$의 휨 매개변수 및 에너지 밴드갭을 계산하였다. 300K의 조성비 구간($0{\leq}x{\leq}0.05$)에서 에너지 밴드갭들이 급격히 감소하며, 해당하는 계산된 휨 매개변수가 15eV임을 알 수 있었다. 에너지 밴드갭 계산 결과로부터 굴절률 n과 고주파 유전상수 ${\varepsilon}$ 등의 광학상수를 계산하였고, 에너지 밴드갭 계산 결과는 실험치를 대체로 잘 설명하였다.

Keywords

KCTSAD_2018_v13n6_1213_f0001.png 이미지

그림 1. 300K에서 질소 조성비 x에 따른 GaAs1-xNx 의 에너지 밴드갭 의존도 Fig. 1 Dependence of the band gap energy of GaAs1-xNx on N content x at 300K

KCTSAD_2018_v13n6_1213_f0002.png 이미지

그림 2. 300K에서 질소 조성비 x에 따른 GaAs1-xNx의 굴절률 n Fig. 2 Refractive index n of GaAs1-xNx versus nitrogen content x at 300K

KCTSAD_2018_v13n6_1213_f0003.png 이미지

그림 3. 300K에서 질소 조성비 x에 따른 GaAs1-xNx의 고주파 유전상수 ε Fig. 3 High-frequency dielectric constant ε of GaAs1-xNx versus nitrogen content x at 300K

표 1. 형태 인자(in Ry), 유효질량 파라미터와 격자상수(in A0)[16] Table 1. Form factors(in Ry), effective-mass parameter and lattice constant(in A0)[16]

KCTSAD_2018_v13n6_1213_t0001.png 이미지

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